N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
PMV450ENEA - 60 V, N-channel Trench MOSFET TO-236 3-Pin Product overview: PMV450ENEAR from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMV450ENEAR can be used for catalog matching and distributor lookup.
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 930806-PMV450ENEAR
Series: Automotive, AEC-Q101
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 60 V 800mA (Ta) 323mW (Ta), 554mW (Tc) Surface Mount TO-236AB
Package: TO-236-3, SC-59, SOT-23-3
Package: Reel - TR
Mounting: Surface Mount
Family Name: PMV450
Categories: Discrete Semiconductor Products
Case / Package: TO-236AB
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 86 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 25 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Other Part Number: 1727-2532-2, 568-12971-2-ND, 1727-2532-1, 568-12971-1-ND, 568-12971-1, 1727-2532-6, 934068702215, 568-62971-6, 568-12971-6-ND, 568-62971-6-ND, PMV450ENEAR-ND
N-Channel 60V 800mA (Ta) 323mW (Ta), 554mW (Tc) Surface Mount TO-236AB
N-Channel 60V 800mA (Ta) 323mW (Ta), 554mW (Tc) Surface Mount TO-236AB
N-Channel 60V 800mA (Ta) 323mW (Ta), 554mW (Tc) Surface Mount TO-236AB
MOSFET PMV450ENEA/TO-236AB/
MOSFET N-CH 60V 800MA TO236AB
MOSFET, N- CH, 60V, 0.8A, TO-236AB; Transistor Polarity:N Channel; Continuous Drain Current Id:800mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes
MOSFET N-CH 60V 800MA TO236AB
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMV450ENEAR | 278-PMV450ENEAR | 930806-PMV450ENEAR | 1727-PMV450ENEARTR-ND | PMV450ENEAR | PMV450ENEAR | 99Y2087 | PMV450ENEAR |
| Product Name | 60 V, N-channel Trench MOSFET | N-Channel 60 V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV450ENEAR | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, NCh, 60V, 0.8A, To-236Ab; Transistor Polarity Nexperia | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| IDSS | 800 milliamps | 800 milliamps | 800 milliamps | |||||
| VGS(off) | 20 volts | |||||||
| PD | 323 milliwatts | 323 milliwatts |
