Nexperia B.V. Datasheets for Power Bipolar Transistors
Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical signals.
Power Bipolar Transistors: Learn more
| Product Name | Notes |
|---|---|
| NPN general-purpose transistor in a medium power SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: BSR31-Q. Features and benefits High current (max. 1 A) Low voltage (max. 80 V)... | |
| NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. Features and benefits High thermal power dissipation capability High energy efficiency due to less... | |
| NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD32C Features and benefits High thermal power dissipation capability High energy efficiency... | |
| NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD32CA Features and benefits High thermal power dissipation capability High energy efficiency... | |
| NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD42C-Q Features and benefits High thermal power dissipation capability High energy efficiency... | |
| NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD42C Features and benefits High thermal power dissipation capability High energy efficiency... | |
| NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11 Features and benefits High thermal power dissipation capability High energy efficiency... | |
| NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11A Features and benefits High thermal power dissipation capability High energy efficiency... | |
| NPN high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits High thermal power dissipation capability High energy efficiency due to... | |
| NPN high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: MJPE32C-Q Features and benefits High thermal power dissipation capability High energy... | |
| NPN high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: MJPE32C Features and benefits High thermal power dissipation capability High energy... | |
| NPN high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: MJPE45H11-Q Features and benefits High thermal power dissipation capability High energy... | |
| NPN high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: MJPE45H11 Features and benefits High thermal power dissipation capability High energy... | |
| NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60406PY-Q Features and benefits High thermal power dissipation capability High temperature applications up... | |
| NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60406PY Features and benefits High thermal power dissipation capability High temperature applications up... | |
| NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60410PY-Q Features and benefits High thermal power dissipation capability High temperature applications up... | |
| NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60410PY Features and benefits High thermal power dissipation capability High temperature applications up... | |
| NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60415PY-Q Features and benefits High thermal power dissipation capability High temperature applications up... | |
| NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60415PY Features and benefits High thermal power dissipation capability High temperature applications up... | |
| NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY-Q Features and benefits High thermal power dissipation capability High temperature applications up... | |
| NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY Features and benefits High thermal power dissipation capability High temperature applications up... | |
| NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60606PY-Q Features and benefits High thermal power dissipation capability High temperature applications up... | |
| NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60606PY Features and benefits High thermal power dissipation capability High temperature applications up... | |
| NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60610PY-Q Features and benefits High thermal power dissipation capability High temperature applications up... | |
| NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60610PY Features and benefits High thermal power dissipation capability High temperature applications up... | |
| NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC Features and benefits High thermal power dissipation capability High temperature applications up... | |
| NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYCLH Features and benefits High thermal power dissipation capability High temperature applications up... | |
| NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY-Q Features and benefits High thermal power dissipation capability Suitable for high temperature... | |
| NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61006PY-Q Features and benefits High thermal power dissipation capability High temperature applications up... | |
| NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61006PY Features and benefits High thermal power dissipation capability High temperature applications up... | |
| NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61010PY-Q Features and benefits High thermal power dissipation capability High temperature applications up... | |
| NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61010PY Features and benefits High thermal power dissipation capability High temperature applications up... | |
| NPN low VCEsat Breakthrough in Smal Signal (BISS) transitor in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits Low collector-emitter saturation voltage... | |
| NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: 2PB1424. Features and benefits Low... | |
| NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement: PBSS5330PA. | |
| NPN low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4021PZ Features and benefits Very low collector-emitter saturation voltage VCEsat High... | |
| NPN low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PZ Features and benefits Very low collector-emitter saturation voltage VCEsat High... | |
| NPN low VCEsat transitor in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5360X Features and benefits Low collector-emitter saturation voltage VCEsat... | |
| NPN medium power transistor in a SOT1061 leadless very small Surface-Mounted Device (SMD) plastic package. PNP complement: BC69PA. Features and benefits High current Two current gain selections High power dissipation... | |
| NPN medium power transistor in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Three current... | |
| NPN medium power transistor in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package. Features and benefits High current Three current gain selections High power dissipation capability Exposed... | |
| NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Three current gain... | |
| NPN medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Three current gain... | |
| NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Three current gain... | |
| NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink... | |
| NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package Features and benefits High collector current capability IC and ICM Three current gain... | |
| NPN power transistors in a power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Three current gain... | |
| PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31C Features and benefits High thermal power dissipation capability High energy efficiency... | |
| PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31CA Features and benefits High thermal power dissipation capability High energy efficiency... | |
| PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD41C-Q Features and benefits High thermal power dissipation capability High energy efficiency... | |
| PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD41C Features and benefits High thermal power dissipation capability High energy efficiency... | |
| PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD44H11 Features and benefits High thermal power dissipation capability High energy efficiency... | |
| PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD44H11A Features and benefits High thermal power dissipation capability High energy efficiency... | |
| PNP high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: MJPE31C-Q Features and benefits High thermal power dissipation capability High energy... | |
| PNP high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: MJPE31C Features and benefits High thermal power dissipation capability High energy... | |
| PNP high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: MJPE44H11-Q Features and benefits High thermal power dissipation capability High energy... | |
| PNP high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: MJPE44H11 Features and benefits High thermal power dissipation capability High energy... | |
| PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60406NY-Q Features and benefits High thermal power dissipation capability Suitable for high temperature... | |
| PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60406NY. Features and benefits High thermal power dissipation capability Suitable for high temperature... | |
| PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60410NY-Q Features and benefits High thermal power dissipation capability Suitable for high temperature... | |
| PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60410NY Features and benefits High thermal power dissipation capability Suitable for high temperature... | |
| PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60415NY-Q Features and benefits High thermal power dissipation capability High temperature applications up... | |
| PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60415NY Features and benefits High thermal power dissipation capability High temperature applications up... | |
| PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60603NY-Q Features and benefits High thermal power dissipation capability Suitable for high temperature... | |
| PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60603NY. Features and benefits High thermal power dissipation capability Suitable for high temperature... | |
| PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60606NY-Q Features and benefits High thermal power dissipation capability Suitable for high temperature... | |
| PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60606NY. Features and benefits High thermal power dissipation capability Suitable for high temperature... | |
| PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60610NY-Q Features and benefits High thermal power dissipation capability High temperature applications up... | |
| PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60610NY Features and benefits High thermal power dissipation capability High temperature applications up... | |
| PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61002NYCLH. Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current... | |
| PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY-Q Features and benefits High thermal power dissipation capability Suitable for high temperature... | |
| PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY Features and benefits High thermal power dissipation capability Suitable for high temperature... | |
| PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61006NY-Q Features and benefits High thermal power dissipation capability High temperature applications up... | |
| PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61006NY Features and benefits High thermal power dissipation capability High temperature applications up... | |
| PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61010NY-Q Features and benefits High thermal power dissipation capability Suitable for high temperature... | |
| PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61010NY. Features and benefits High thermal power dissipation capability Suitable for high temperature... | |
| PNP high-voltage low VCEsat transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540X Features and benefits High voltage Low collector-emitter... | |
| PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4330PA. | |
| PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4630PA. | |
| PNP low VCEsat transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4021NX Features and benefits Very low collector-emitter saturation voltage... | |
| PNP low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4032NZ Features and benefits Low collector-emitter saturation voltage VCEsat Optimized switching... | |
| PNP low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350Z Features and benefits Low collector-emitter saturation voltage VCEsat High collector... | |
| PNP low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4360Z Features and benefits Low collector-emitter saturation voltage VCEsat High collector... | |
| PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability: IC... | |
| PNP low VCEsat transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350D Features and benefits Low collector-emitter saturation voltage VCEsat High current capability... | |
| PNP low VCEsat transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.. Features and benefits SOT89 (SC-62) package Low collector-emitter saturation voltage V... | |
| PNP low VCEsat transitor in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4360X Features and benefits Low collector-emitter saturation voltage VCEsat... | |
| PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: BC868. Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink... | |
| PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: BSR41 Features and benefits High current High power dissipation capability Exposed heatsink for excellent thermal and... | |
| PNP medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Three current gain selections High... | |
| PNP medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Three current gain... | |
| PNP power transistors in a power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Three current gain... | |
| PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4160PANP. NPN/NPN complement: PBSS4160PAN. Features and... | |
| PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4260PANP. NPN/NPN complement: PBSS4260PAN. Features and benefits... |