Nexperia B.V. 30 V, N-channel Trench MOSFET PMX300UNEZ

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. The package measures 0.63 mm x 0.33 mm x 0.25 mm and has a low profile of 0.25 mm. It provides electrostatic discharge protection greater than 2 kV HBM, with a drain-source voltage rating of 30 V, a gate-source voltage rating of ±8 V, and a continuous drain current of 820 mA at 4.5 V gate drive and 25 °C ambient. The drain-source on-state resistance is 190 mΩ to 250 mΩ at 1 A and 25 °C junction temperature. The device operates with a junction temperature range of -55 °C to 150 °C and meets the IEC 60134 Absolute Maximum Rating System.