Nexperia B.V. 30 V, N-channel Trench MOSFET PMX300UNEZ

Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. Features and benefits Low threshold voltage Leadless ultra small package 0.63mm x 0.33 mm x 0.25 mm Trench MOSFET technology Low profile (0.25 mm) ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Battery switch High-speed line driver Low-side load switch Switching circuits
  • 30 V, N-channel Trench MOSFET - PMX300UNEZ - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-PMX300UNEZCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMX300UNEZDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMX300UNEZTR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMX300UNEZ - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
Request a Quote Datasheet
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. Features and benefits Low threshold voltage Leadless ultra small package 0.63mm x 0.33 mm x 0.25 mm Trench MOSFET technology Low profile (0.25 mm) ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Battery switch High-speed line driver Low-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
30 V, N-channel Trench MOSFET - PMX300UNEZ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
30 V, N-channel Trench MOSFET
PMX300UNEZ
30 V, N-channel Trench MOSFET PMX300UNEZ
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. Features and benefits Low threshold voltage Leadless ultra small package 0.63mm x 0.33 mm x 0.25 mm Trench MOSFET technology Low profile (0.25 mm) ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Battery switch High-speed line driver Low-side load switch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology.

Features and benefits

  • Low threshold voltage
  • Leadless ultra small package 0.63mm x 0.33 mm x 0.25 mm
  • Trench MOSFET technology
  • Low profile (0.25 mm)
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM

Applications

  • Battery switch
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PMX300UNEZCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMX300UNEZCT-ND
Single FETs, MOSFETs 1727-PMX300UNEZCT-ND
PMX300UNE/SOT8013/DF N0603-3

PMX300UNE/SOT8013/DFN0603-3

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMX300UNEZDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMX300UNEZDKR-ND
Single FETs, MOSFETs 1727-PMX300UNEZDKR-ND
PMX300UNE/SOT8013/DF N0603-3

PMX300UNE/SOT8013/DFN0603-3

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMX300UNEZTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMX300UNEZTR-ND
Single FETs, MOSFETs 1727-PMX300UNEZTR-ND
PMX300UNE/SOT8013/DF N0603-3

PMX300UNE/SOT8013/DFN0603-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMX300UNEZ - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMX300UNEZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMX300UNEZ
PMX300UNE/SOT8013/DF N0603-3

PMX300UNE/SOT8013/DFN0603-3

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number PMX300UNEZ 1727-PMX300UNEZCT-ND PMX300UNEZ
Product Name 30 V, N-channel Trench MOSFET Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 30 volts
IDSS 820000 milliamps
VGS(off) 8 volts
PD 300 milliwatts
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