Nexperia B.V. 30 V, N-channel Trench MOSFET PMPB07R3ENH

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. The package measures 2 x 2 x 0.65 mm and features an exposed drain pad for excellent thermal conduction. The device has a drain-source voltage rating of 30 V, a gate-source voltage range of -20 V to 20 V, and a continuous drain current of 17 A at 25 °C with a drain-source on-state resistance of 7.3 mΩ to 8.6 mΩ at 10 V gate-source voltage. It is logic-level compatible, offers ultra-low gate and gate-drain charge for high efficiency, superfast switching with soft-recovery, and low spiking and ringing for low EMI. Applications include DC-to-DC conversion, battery management, low-side load switching, and general switching circuits.