Nexperia B.V. 20 V, N-channel Trench MOSFET PMPB23XNEAX

Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks for optical solder inspection ElectroStatic Discharge (ESD) protection > 500 V HBM (class H1B) AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits
  • 20 V, N-channel Trench MOSFET - PMPB23XNEAX - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-PMPB23XNEAXDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMPB23XNEAXCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMPB23XNEAXTR-ND - DigiKey
    DigiKey
  • PMPB23XNEAX - Rochester Electronics
    Rochester Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMPB23XNEAX - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks for optical solder inspection ElectroStatic Discharge (ESD) protection > 500 V HBM (class H1B) AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
20 V, N-channel Trench MOSFET - PMPB23XNEAX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
20 V, N-channel Trench MOSFET
PMPB23XNEAX
20 V, N-channel Trench MOSFET PMPB23XNEAX
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks for optical solder inspection ElectroStatic Discharge (ESD) protection > 500 V HBM (class H1B) AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Low threshold voltage
  • Trench MOSFET technology
  • Side wettable flanks for optical solder inspection
  • ElectroStatic Discharge (ESD) protection > 500 V HBM (class H1B)
  • AEC-Q101 qualified

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PMPB23XNEAXDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMPB23XNEAXDKR-ND
Single FETs, MOSFETs 1727-PMPB23XNEAXDKR-ND
MOSFET N-CH 20V 7A DFN2020MD-6

MOSFET N-CH 20V 7A DFN2020MD-6

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMPB23XNEAXCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMPB23XNEAXCT-ND
Single FETs, MOSFETs 1727-PMPB23XNEAXCT-ND
MOSFET N-CH 20V 7A DFN2020MD-6

MOSFET N-CH 20V 7A DFN2020MD-6

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMPB23XNEAXTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMPB23XNEAXTR-ND
Single FETs, MOSFETs 1727-PMPB23XNEAXTR-ND
N-Channel 20V 7A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6

N-Channel 20V 7A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6

Buy Now Datasheet
- PMPB23XNEAX - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
PMPB23XNEAX
PMPB23XNEAX
PMPB23XNEA - 20 V, N-channel Trench MOSFET

PMPB23XNEA - 20 V, N-channel Trench MOSFET

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
PMPB23XNEAX
MOSFET PMPB23XNEAX
MOSFET PMPB23XNEA/SOT1220/S OT1220

MOSFET PMPB23XNEA/SOT1220/SOT1220

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMPB23XNEAX - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMPB23XNEAX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMPB23XNEAX
MOSFET N-CH 20V 7A DFN2020MD-6

MOSFET N-CH 20V 7A DFN2020MD-6

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey Rochester Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number PMPB23XNEAX 1727-PMPB23XNEAXDKR-ND PMPB23XNEAX PMPB23XNEAX PMPB23XNEAX
Product Name 20 V, N-channel Trench MOSFET Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 20 volts
IDSS 7000 milliamps
VGS(off) 12 volts
PD 1.7 milliwatts
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