Nexperia B.V. N-channel 80 V, 10 mΩ logic level MOSFET in LFPAK56 PSMN010-80YLX

Description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. Features and benefits Advanced TrenchMOS provides low RDSon and low gate charge Logic level gate operation Avalanche rated, 100% tested LFPAK provides maximum power density in a Power SO8 package Applications Synchronous rectification in power supply equipment Chargers & adaptors with Vout < 10 V Fast charge & USB-PD applications Battery powered motor control LED lighting & TV backlight
Request a Quote Datasheet
Description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. Features and benefits Advanced TrenchMOS provides low RDSon and low gate charge Logic level gate operation Avalanche rated, 100% tested LFPAK provides maximum power density in a Power SO8 package Applications Synchronous rectification in power supply equipment Chargers & adaptors with Vout < 10 V Fast charge & USB-PD applications Battery powered motor control LED lighting & TV backlight
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-channel 80 V, 10 mΩ logic level MOSFET in LFPAK56 - PSMN010-80YLX - Nexperia B.V.
Nijmegen, Netherlands
N-channel 80 V, 10 mΩ logic level MOSFET in LFPAK56
PSMN010-80YLX
N-channel 80 V, 10 mΩ logic level MOSFET in LFPAK56 PSMN010-80YLX
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. Features and benefits Advanced TrenchMOS provides low RDSon and low gate charge Logic level gate operation Avalanche rated, 100% tested LFPAK provides maximum power density in a Power SO8 package Applications Synchronous rectification in power supply equipment Chargers & adaptors with Vout < 10 V Fast charge & USB-PD applications Battery powered motor control LED lighting & TV backlight

Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment.

Features and benefits

  • Advanced TrenchMOS provides low RDSon and low gate charge
  • Logic level gate operation
  • Avalanche rated, 100% tested
  • LFPAK provides maximum power density in a Power SO8 package

Applications

  • Synchronous rectification in power supply equipment
  • Chargers & adaptors with Vout < 10 V
  • Fast charge & USB-PD applications
  • Battery powered motor control
  • LED lighting & TV backlight
Supplier's Site Datasheet
Single FETs, MOSFETs - PSMN010-80YLX - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PSMN010-80YLX
Single FETs, MOSFETs PSMN010-80YLX
MOSFET N-CH 80V 84A LFPAK56

MOSFET N-CH 80V 84A LFPAK56

Supplier's Site Datasheet
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs -  - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Alternative Parts (Cross-Reference): Cross Manufacturer: Nexperia USA Inc. Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel® Product Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V

Alternative Parts (Cross-Reference): Cross
Manufacturer: Nexperia USA Inc.
Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2588-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2588-1-ND
Single FETs, MOSFETs 1727-2588-1-ND
N-Channel 80V 84A (Tc) 194W (Tc) Surface Mount LFPAK56, Power-SO8

N-Channel 80V 84A (Tc) 194W (Tc) Surface Mount LFPAK56, Power-SO8

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2588-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2588-6-ND
Single FETs, MOSFETs 1727-2588-6-ND
N-Channel 80V 84A (Tc) 194W (Tc) Surface Mount LFPAK56, Power-SO8

N-Channel 80V 84A (Tc) 194W (Tc) Surface Mount LFPAK56, Power-SO8

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2588-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2588-2-ND
Single FETs, MOSFETs 1727-2588-2-ND
N-Channel 80V 84A (Tc) 194W (Tc) Surface Mount LFPAK56, Power-SO8

N-Channel 80V 84A (Tc) 194W (Tc) Surface Mount LFPAK56, Power-SO8

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET PSMN010-80YL/LFPAK/R EEL 7" Q1/

MOSFET PSMN010-80YL/LFPAK/REEL 7" Q1/

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PSMN010-80YLX - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PSMN010-80YLX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PSMN010-80YLX
MOSFET N-CH 80V 84A LFPAK56

MOSFET N-CH 80V 84A LFPAK56

Supplier's Site
Mosfet, N-Ch, 80V, 84A, Sot-669-4; Transistor Polarity Nexperia - 96Y9580 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 80V, 84A, Sot-669-4; Transistor Polarity Nexperia
96Y9580
Mosfet, N-Ch, 80V, 84A, Sot-669-4; Transistor Polarity Nexperia 96Y9580
MOSFET, N-CH, 80V, 84A, SOT-669-4; Transistor Polarity:N Channel; Continuous Drain Current Id:84A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0074ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes

MOSFET, N-CH, 80V, 84A, SOT-669-4; Transistor Polarity:N Channel; Continuous Drain Current Id:84A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0074ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. ODG (Origin Data Global) Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number PSMN010-80YLX PSMN010-80YLX 1727-2588-1-ND PSMN010-80YLX PSMN010-80YLX 96Y9580
Product Name N-channel 80 V, 10 mΩ logic level MOSFET in LFPAK56 Single FETs, MOSFETs Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 80V, 84A, Sot-669-4; Transistor Polarity Nexperia
MOSFET Operating Mode Enhancement
Package Type SOT669 SC-100, SOT-669 SOT3 SC-100, SOT-669 SC-100, SOT-669 TO-3
Polarity N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 80 volts
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