MOSFET P-CH 30V 6.4A DFN2020MD-6
MOSFET P-CH 30V 6.4A DFN2020MD-6
P-Channel 30V 6.4A (Ta) 1.8W (Ta), 15.6W (Tc) Surface Mount DFN2020MD-6
MOSFET P-CH 30V 6.4A DFN2020MD-6
MOSFET 30 V, P-channel Trench MOSFET
MOSFET, P-CH, -30V, -9.5A, SOT-1220; Transistor Polarity:P Channel; Continuous Drain Current Id:-9.5A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.5V; Power RoHS Compliant: Yes
MOSFET P-CH 30V 6.4A DFN2020MD-6
| ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | PMPB24EPX | 1727-PMPB24EPXDKR-ND | PMPB24EPX | 03AJ2552 | PMPB24EPX |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Mosfet, P-Ch, -30V, -9.5A, Sot-1220; Transistor Polarity Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 30 volts | ||||
| IDSS | 6400 milliamps | -9500 milliamps | |||
| PD | 1800 milliwatts |
