MOSFET P-CH 30V 6.4A DFN2020MD-6
P-Channel 30V 6.4A (Ta) 1.8W (Ta), 15.6W (Tc) Surface Mount DFN2020MD-6
MOSFET P-CH 30V 6.4A DFN2020MD-6
MOSFET P-CH 30V 6.4A DFN2020MD-6
MOSFET P-CH 30V 6.4A DFN2020MD-6
MOSFET, P-CH, -30V, -9.5A, SOT-1220; Transistor Polarity:P Channel; Continuous Drain Current Id:-9.5A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.5V; Power RoHS Compliant: Yes
MOSFET 30 V, P-channel Trench MOSFET
| DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1727-PMPB24EPXDKR-ND | PMPB24EPX | PMPB24EPX | 03AJ2552 | PMPB24EPX |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, -30V, -9.5A, Sot-1220; Transistor Polarity Nexperia | MOSFET |
| Polarity | P-Channel | P-Channel; P-Channel | |||
| Package Type | 6-UDFN Exposed Pad | 6-UDFN Exposed Pad | 1069 pF @ 15 V | TO-3 | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 30 volts | ||||
| IDSS | 6400 milliamps | -9500 milliamps |
