Nexperia B.V. 20 V, N-channel Trench MOSFET PMPB12UNEX

Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage Exposed drain pad for excellent thermal conduction Tin-plated 100% solderable side pads for optical solder inspection ElectroStatic Discharge (ESD) protection > 1 kV HBM Applications LED driver Power management Low-side loadswitch Switching circuits
  • 20 V, N-channel Trench MOSFET - PMPB12UNEX - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-2703-1-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-2703-2-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-2703-6-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMPB12UNEX - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage Exposed drain pad for excellent thermal conduction Tin-plated 100% solderable side pads for optical solder inspection ElectroStatic Discharge (ESD) protection > 1 kV HBM Applications LED driver Power management Low-side loadswitch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
20 V, N-channel Trench MOSFET - PMPB12UNEX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
20 V, N-channel Trench MOSFET
PMPB12UNEX
20 V, N-channel Trench MOSFET PMPB12UNEX
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage Exposed drain pad for excellent thermal conduction Tin-plated 100% solderable side pads for optical solder inspection ElectroStatic Discharge (ESD) protection > 1 kV HBM Applications LED driver Power management Low-side loadswitch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Trench MOSFET technology
  • Low threshold voltage
  • Exposed drain pad for excellent thermal conduction
  • Tin-plated 100% solderable side pads for optical solder inspection
  • ElectroStatic Discharge (ESD) protection > 1 kV HBM

Applications

  • LED driver
  • Power management
  • Low-side loadswitch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-2703-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2703-1-ND
Single FETs, MOSFETs 1727-2703-1-ND
N-Channel 20V 11.4A (Ta) 470mW (Ta) Surface Mount DFN2020MD-6

N-Channel 20V 11.4A (Ta) 470mW (Ta) Surface Mount DFN2020MD-6

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2703-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2703-2-ND
Single FETs, MOSFETs 1727-2703-2-ND
N-Channel 20V 11.4A (Ta) 470mW (Ta) Surface Mount DFN2020MD-6

N-Channel 20V 11.4A (Ta) 470mW (Ta) Surface Mount DFN2020MD-6

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2703-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2703-6-ND
Single FETs, MOSFETs 1727-2703-6-ND
N-Channel 20V 11.4A (Ta) 470mW (Ta) Surface Mount DFN2020MD-6

N-Channel 20V 11.4A (Ta) 470mW (Ta) Surface Mount DFN2020MD-6

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
PMPB12UNEX
MOSFET PMPB12UNEX
MOSFET PMPB12UNE/SOT1220/RE EL 7" Q1/T

MOSFET PMPB12UNE/SOT1220/REEL 7" Q1/T

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMPB12UNEX - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMPB12UNEX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMPB12UNEX
MOSFET N-CH 20V 11.4A 6DFN

MOSFET N-CH 20V 11.4A 6DFN

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number PMPB12UNEX 1727-2703-1-ND PMPB12UNEX PMPB12UNEX
Product Name 20 V, N-channel Trench MOSFET Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 20 volts
IDSS 11400 milliamps
VGS(off) 0.6500 volts
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