Nexperia B.V. 20 V, N-channel Trench MOSFET PMPB12UNEX

Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage Exposed drain pad for excellent thermal conduction Tin-plated 100% solderable side pads for optical solder inspection ElectroStatic Discharge (ESD) protection > 1 kV HBM Applications LED driver Power management Low-side loadswitch Switching circuits
  • 20 V, N-channel Trench MOSFET - PMPB12UNEX - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-2703-1-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-2703-2-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMPB12UNEX - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage Exposed drain pad for excellent thermal conduction Tin-plated 100% solderable side pads for optical solder inspection ElectroStatic Discharge (ESD) protection > 1 kV HBM Applications LED driver Power management Low-side loadswitch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
20 V, N-channel Trench MOSFET - PMPB12UNEX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
20 V, N-channel Trench MOSFET
PMPB12UNEX
20 V, N-channel Trench MOSFET PMPB12UNEX
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage Exposed drain pad for excellent thermal conduction Tin-plated 100% solderable side pads for optical solder inspection ElectroStatic Discharge (ESD) protection > 1 kV HBM Applications LED driver Power management Low-side loadswitch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Trench MOSFET technology
  • Low threshold voltage
  • Exposed drain pad for excellent thermal conduction
  • Tin-plated 100% solderable side pads for optical solder inspection
  • ElectroStatic Discharge (ESD) protection > 1 kV HBM

Applications

  • LED driver
  • Power management
  • Low-side loadswitch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-2703-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2703-1-ND
Single FETs, MOSFETs 1727-2703-1-ND
N-Channel 20V 11.4A (Ta) 470mW (Ta) Surface Mount DFN2020MD-6

N-Channel 20V 11.4A (Ta) 470mW (Ta) Surface Mount DFN2020MD-6

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2703-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2703-2-ND
Single FETs, MOSFETs 1727-2703-2-ND
N-Channel 20V 11.4A (Ta) 470mW (Ta) Surface Mount DFN2020MD-6

N-Channel 20V 11.4A (Ta) 470mW (Ta) Surface Mount DFN2020MD-6

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMPB12UNEX - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMPB12UNEX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMPB12UNEX
MOSFET N-CH 20V 11.4A 6DFN

MOSFET N-CH 20V 11.4A 6DFN

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
PMPB12UNEX
MOSFET PMPB12UNEX
MOSFET PMPB12UNE/SOT1220/RE EL 7" Q1/T

MOSFET PMPB12UNE/SOT1220/REEL 7" Q1/T

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number PMPB12UNEX 1727-2703-1-ND PMPB12UNEX PMPB12UNEX
Product Name 20 V, N-channel Trench MOSFET Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
MOSFET Operating Mode Enhancement
V(BR)DSS 20 volts
IDSS 11400 milliamps
VGS(off) 12 volts
PD 470 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

60 V, 360 mA N-channel Trench MOSFET - 2N7002P,235 - Nexperia B.V.
Nexperia B.V.
60 V, 360 mA N-channel Trench MOSFET
2N7002P,235
Specs
MOSFET Operating Mode Enhancement
V(BR)DSS 60 volts
IDSS 360000 milliamps
View Details
5 suppliers
Single FETs, MOSFETs - 1727-5501-2-ND - DigiKey
Nexperia B.V.
Single FETs, MOSFETs
BUK6207-55C,118
Specs
Polarity N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63
Transistor Grade / Operating Range Automotive
View Details
4 suppliers
PNP general-purpose transistor - 2PA1576Q,115 - Nexperia B.V.
Nexperia B.V.
PNP general-purpose transistor
2PA1576Q,115
Specs
Package Type SOT323; SOT323 SOT323
IC(max) -150 milliamps
VCEO -50 volts
View Details
4 suppliers
N-channel 40 V, 15.0 mOhm standard level MOSFET in LFPAK33 - BUK7M15-40HX - Nexperia B.V.
Nexperia B.V.
N-channel 40 V, 15.0 mOhm standard level MOSFET in LFPAK33
BUK7M15-40HX
Specs
MOSFET Operating Mode Enhancement
V(BR)DSS 40 volts
IDSS 30000 milliamps
View Details
5 suppliers