P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
P-Channel 30V 2.8A (Ta) 510mW (Ta), 6.4W (Tc) Surface Mount TO-236AB
P-Channel 30V 2.8A (Ta) 510mW (Ta), 6.4W (Tc) Surface Mount TO-236AB
P-Channel 30V 2.8A (Ta) 510mW (Ta), 6.4W (Tc) Surface Mount TO-236AB
Small Signal Field-Effect Transistor
MOSFET P-CH 30V 2.8A TO236AB
| Nexperia B.V. | DigiKey | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF MOSFET Transistors | RF Transistors |
| Product Number | PMV74EPER | 1727-PMV74EPERCT-ND | PMV74EPER | PMV74EPER |
| Product Name | 30 V, P-channel Trench MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | -30 volts | |||
| IDSS | -3400 milliamps | |||
| VGS(off) | 20 volts | |||
| PD | 510 milliwatts |