Nexperia B.V. 30 V, N-channel Trench MOSFET PMPB06R2ENZ

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package measuring 2 x 2 x 0.65 mm, using Trench MOSFET technology. It has a drain-source voltage rating of 30 V, a continuous drain current of 18 A at 25 °C, and a drain-source on-state resistance of 6.2 to 7.4 mΩ at 10 V gate-source voltage and 25 °C. The device features an exposed drain pad for thermal conduction, logic-level compatibility, ultra-low gate charge for high switching efficiency, and superfast switching with soft-recovery. It meets the IEC 60134 Absolute Maximum Rating System and is intended for DC-to-DC conversion, battery management, low-side load switching, and general switching circuits.