P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) surface-mounted plastic package measuring 2.9 mm x 1.3 mm x 1 mm. Features Trench MOSFET technology, low threshold voltage, and very fast switching. Rated for a drain-source voltage of -28 V, continuous drain current of -4 A at 25 °C, and drain-source on-state resistance of 41 to 50 mΩ at -4.5 V gate-source voltage. Qualified to AEC-Q101 for automotive applications.
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
SMALL SIGNAL MOSFETS FOR AUTOMOT
SMALL SIGNAL MOSFETS FOR AUTOMOT
SMALL SIGNAL MOSFETS FOR AUTOMOT
| Nexperia B.V. | DigiKey | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | PMV41XPAR | 1727-PMV41XPARCT-ND |
| Product Name | 28 V, P-channel Trench MOSFET | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |
| V(BR)DSS | -28 volts | |
| IDSS | -4000 milliamps | |
| VGS(off) | 12 volts | |
| PD | 510 milliwatts |
