Nexperia B.V. 30 V, P-channel Trench MOSFET PMPB27EPAX

Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Side wettable flanks for optical solder inspection Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm AEC-Q101 qualified Applications Relay driver High-speed line driver High-side load switch Switching circuits
Request a Quote Datasheet
Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Side wettable flanks for optical solder inspection Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm AEC-Q101 qualified Applications Relay driver High-speed line driver High-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
30 V, P-channel Trench MOSFET - PMPB27EPAX - Nexperia B.V.
Nijmegen, Netherlands
30 V, P-channel Trench MOSFET
PMPB27EPAX
30 V, P-channel Trench MOSFET PMPB27EPAX
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Side wettable flanks for optical solder inspection Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm AEC-Q101 qualified Applications Relay driver High-speed line driver High-side load switch Switching circuits

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Trench MOSFET technology
  • Side wettable flanks for optical solder inspection
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
  • AEC-Q101 qualified

Applications

  • Relay driver
  • High-speed line driver
  • High-side load switch
  • Switching circuits
Supplier's Site Datasheet
 - PMPB27EPAX - Rochester Electronics
Newburyport, MA, United States
30 V, P-channel Trench MOSFET

30 V, P-channel Trench MOSFET

Supplier's Site Datasheet
Single FETs, MOSFETs - PMPB27EPAX - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PMPB27EPAX
Single FETs, MOSFETs PMPB27EPAX
MOSFET P-CH 30V 6.1A DFN2020MD-6

MOSFET P-CH 30V 6.1A DFN2020MD-6

Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PMPB27EPAXDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMPB27EPAXDKR-ND
Single FETs, MOSFETs 1727-PMPB27EPAXDKR-ND
MOSFET P-CH 30V 6.1A DFN2020MD-6

MOSFET P-CH 30V 6.1A DFN2020MD-6

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMPB27EPAXTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMPB27EPAXTR-ND
Single FETs, MOSFETs 1727-PMPB27EPAXTR-ND
P-Channel 30V 6.1A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6

P-Channel 30V 6.1A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMPB27EPAXCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMPB27EPAXCT-ND
Single FETs, MOSFETs 1727-PMPB27EPAXCT-ND
MOSFET P-CH 30V 6.1A DFN2020MD-6

MOSFET P-CH 30V 6.1A DFN2020MD-6

Buy Now Datasheet
Mosfet, P-Ch, -30V, -6.1A, Sot-1220; Transistor Polarity Nexperia - 78AC6355 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -30V, -6.1A, Sot-1220; Transistor Polarity Nexperia
78AC6355
Mosfet, P-Ch, -30V, -6.1A, Sot-1220; Transistor Polarity Nexperia 78AC6355
MOSFET, P-CH, -30V, -6.1A, SOT-1220; Transistor Polarity:P Channel; Continuous Drain Current Id:-6.1A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.5V; Power RoHS Compliant: Yes

MOSFET, P-CH, -30V, -6.1A, SOT-1220; Transistor Polarity:P Channel; Continuous Drain Current Id:-6.1A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.5V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET PMPB27EPA/SOT1220/SO T1220

MOSFET PMPB27EPA/SOT1220/SOT1220

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMPB27EPAX - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMPB27EPAX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMPB27EPAX
MOSFET P-CH 30V 6.1A DFN2020MD-6

MOSFET P-CH 30V 6.1A DFN2020MD-6

Supplier's Site

Technical Specifications

  Nexperia B.V. Rochester Electronics ODG (Origin Data Global) DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number PMPB27EPAX PMPB27EPAX PMPB27EPAX 1727-PMPB27EPAXDKR-ND 78AC6355 PMPB27EPAX PMPB27EPAX
Product Name 30 V, P-channel Trench MOSFET Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, P-Ch, -30V, -6.1A, Sot-1220; Transistor Polarity Nexperia MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel P-Channel; P-Channel P-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS -30 volts 30 volts
IDSS -6100 milliamps 6100 milliamps -6100 milliamps
VGS(off) -1.5 volts
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