P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
30 V, P-channel Trench MOSFET
MOSFET P-CH 30V 6.1A DFN2020MD-6
MOSFET P-CH 30V 6.1A DFN2020MD-6
P-Channel 30V 6.1A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6
MOSFET P-CH 30V 6.1A DFN2020MD-6
MOSFET, P-CH, -30V, -6.1A, SOT-1220; Transistor Polarity:P Channel; Continuous Drain Current Id:-6.1A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.5V; Power RoHS Compliant: Yes
MOSFET PMPB27EPA/SOT1220/SO
MOSFET P-CH 30V 6.1A DFN2020MD-6
| Nexperia B.V. | Rochester Electronics | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | PMPB27EPAX | PMPB27EPAX | PMPB27EPAX | 1727-PMPB27EPAXDKR-ND | 78AC6355 | PMPB27EPAX | PMPB27EPAX |
| Product Name | 30 V, P-channel Trench MOSFET | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, P-Ch, -30V, -6.1A, Sot-1220; Transistor Polarity Nexperia | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | -30 volts | 30 volts | |||||
| IDSS | -6100 milliamps | 6100 milliamps | -6100 milliamps | ||||
| VGS(off) | -1.5 volts |