Nexperia B.V. 30 V, P-channel Trench MOSFET PMPB27EPAX

Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Side wettable flanks for optical solder inspection Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm AEC-Q101 qualified Applications Relay driver High-speed line driver High-side load switch Switching circuits
  • 30 V, P-channel Trench MOSFET - PMPB27EPAX - Nexperia B.V.
    Nexperia B.V.
  • PMPB27EPAX - Rochester Electronics
    Rochester Electronics
  • Single FETs, MOSFETs - 1727-PMPB27EPAXDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMPB27EPAXTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMPB27EPAXCT-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMPB27EPAX - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, P-Ch, -30V, -6.1A, Sot-1220; Transistor Polarity Nexperia - 78AC6355 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Single FETs, MOSFETs - PMPB27EPAX - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Side wettable flanks for optical solder inspection Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm AEC-Q101 qualified Applications Relay driver High-speed line driver High-side load switch Switching circuits
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Datasheet
Datasheet Summary
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P-channel enhancement mode MOSFET in a leadless DFN2020MD-6 (SOT1220) surface-mount package measuring 2 × 2 × 0.65 mm, designed for high-side load switching and relay driver applications. It features side wettable flanks for optical solder inspection, a drain-source voltage rating of -30 V, a continuous drain current of -6.1 A at 25 °C, and a drain-source on-state resistance of 24 to 29 mΩ at -10 V gate-source voltage. The device is AEC-Q101 qualified for automotive use.

Datasheet Summary
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P-channel enhancement mode MOSFET in a leadless DFN2020MD-6 (SOT1220) surface-mount package measuring 2 × 2 × 0.65 mm, designed for high-side load switching and relay driver applications. It features side wettable flanks for optical solder inspection, a drain-source voltage rating of -30 V, a continuous drain current of -6.1 A at 25 °C, and a drain-source on-state resistance of 24 to 29 mΩ at -10 V gate-source voltage. The device is AEC-Q101 qualified for automotive use.

Suppliers

Company
Product
Description
Supplier Links
30 V, P-channel Trench MOSFET - PMPB27EPAX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
30 V, P-channel Trench MOSFET
PMPB27EPAX
30 V, P-channel Trench MOSFET PMPB27EPAX
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Side wettable flanks for optical solder inspection Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm AEC-Q101 qualified Applications Relay driver High-speed line driver High-side load switch Switching circuits

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Trench MOSFET technology
  • Side wettable flanks for optical solder inspection
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
  • AEC-Q101 qualified

Applications

  • Relay driver
  • High-speed line driver
  • High-side load switch
  • Switching circuits
Supplier's Site Datasheet
- PMPB27EPAX - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
PMPB27EPAX
PMPB27EPAX
30 V, P-channel Trench MOSFET

30 V, P-channel Trench MOSFET

Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PMPB27EPAXDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMPB27EPAXDKR-ND
Single FETs, MOSFETs 1727-PMPB27EPAXDKR-ND
MOSFET P-CH 30V 6.1A DFN2020MD-6

MOSFET P-CH 30V 6.1A DFN2020MD-6

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMPB27EPAXTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMPB27EPAXTR-ND
Single FETs, MOSFETs 1727-PMPB27EPAXTR-ND
P-Channel 30V 6.1A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6

P-Channel 30V 6.1A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMPB27EPAXCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMPB27EPAXCT-ND
Single FETs, MOSFETs 1727-PMPB27EPAXCT-ND
MOSFET P-CH 30V 6.1A DFN2020MD-6

MOSFET P-CH 30V 6.1A DFN2020MD-6

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMPB27EPAX - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMPB27EPAX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMPB27EPAX
MOSFET P-CH 30V 6.1A DFN2020MD-6

MOSFET P-CH 30V 6.1A DFN2020MD-6

Supplier's Site
Mosfet, P-Ch, -30V, -6.1A, Sot-1220; Transistor Polarity Nexperia - 78AC6355 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -30V, -6.1A, Sot-1220; Transistor Polarity Nexperia
78AC6355
Mosfet, P-Ch, -30V, -6.1A, Sot-1220; Transistor Polarity Nexperia 78AC6355
MOSFET, P-CH, -30V, -6.1A, SOT-1220; Transistor Polarity:P Channel; Continuous Drain Current Id:-6.1A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.5V; Power RoHS Compliant: Yes

MOSFET, P-CH, -30V, -6.1A, SOT-1220; Transistor Polarity:P Channel; Continuous Drain Current Id:-6.1A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.5V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Single FETs, MOSFETs - PMPB27EPAX - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PMPB27EPAX
Single FETs, MOSFETs PMPB27EPAX
MOSFET P-CH 30V 6.1A DFN2020MD-6

MOSFET P-CH 30V 6.1A DFN2020MD-6

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
PMPB27EPAX
MOSFET PMPB27EPAX
MOSFET PMPB27EPA/SOT1220/SO T1220

MOSFET PMPB27EPA/SOT1220/SOT1220

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. Rochester Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company ODG (Origin Data Global) VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number PMPB27EPAX PMPB27EPAX 1727-PMPB27EPAXDKR-ND PMPB27EPAX 78AC6355 PMPB27EPAX PMPB27EPAX
Product Name 30 V, P-channel Trench MOSFET Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, P-Ch, -30V, -6.1A, Sot-1220; Transistor Polarity Nexperia Single FETs, MOSFETs MOSFET
MOSFET Operating Mode Enhancement
V(BR)DSS -30 volts 30 volts
IDSS -6100 milliamps -6100 milliamps 6100 milliamps
VGS(off) 20 volts
PD 1.7 milliwatts 1700 milliwatts
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