N-channel enhancement mode field-effect transistor using TrenchMOS technology in a SOT23 surface-mounted package measuring 2.9 mm × 1.3 mm × 1 mm. It has a drain-source voltage rating of 100 V, a continuous drain current of 1.9 A at 25 °C, and a drain-source on-state resistance of 213 mΩ at 10 V gate-source voltage and 0.5 A drain current. Total power dissipation is rated at 2 W at 25 °C. The device meets the thermal resistance specification of 60 K/W from junction to solder point and operates within a junction temperature range of -55 °C to 150 °C.
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology.
Features and benefits
Applications
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089781-PMV213SN,215
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 280mW (Tj)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1.9A (Tc)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 7nC @ 10V
Max Input Capacitance: 330pF @ 20V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 250 mOhm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 100V 1.9A 3-Pin SOT-23 Product overview: PMV213SN,215 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 1.9A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1.9A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMV213SN,215 can be used for catalog matching and distributor lookup.
N-Channel 100V 1.9A (Tc) 280mW (Tj) Surface Mount TO-236AB
N-Channel 100V 1.9A (Tc) 280mW (Tj) Surface Mount TO-236AB
N-Channel 100V 1.9A (Tc) 280mW (Tj) Surface Mount TO-236AB
MOSFET N-CH 100V 1.9A TO236AB
MOSFET, N-CH, 100V, 1.9A, 2W, SOT-23; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
100V 1.9A 280mW 250mΩ@10V,500mA 4V@1mA N Channel SOT-23 MOSFETs ROHS
MOSFET N-CH 100V 1.9A TO236AB
| Nexperia B.V. | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | PMV213SN,215 | 1089781-PMV213SN,215 | 278-PMV213SN,215 | 1727-PMV213SN,215CT-ND | PMV213SN,215 | 97K7752 | PMV213SN,215 | PMV213SN,215 |
| Product Name | N-channel TrenchMOS standard level FET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV213SN,215 | 100V 1.9A SOT-23 MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 100V, 1.9A, 2W, Sot-23; Channel Type Nexperia | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | SOT23; SOT23 SOT23 | SOT3; SOT23; TO-236AB (SOT23) | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3; SOT23 | SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | |||||
| PD | 280 milliwatts | 280 milliwatts | 280 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
