N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology, with a 20 V drain-source voltage rating, 1.3 A continuous drain current at 4.5 V gate-source bias, and a drain-source on-state resistance of 122 to 210 mΩ at 4.5 V and 25 °C. The device has a leadless package measuring 0.63 mm × 0.33 mm × 0.25 mm and a maximum junction temperature of 150 °C. Applications include battery switching, low-side load switching, and high-speed line driving.
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology.
Features and benefits
Applications
N-Channel 20V 1.3A (Ta) 300mW (Ta), 4.7W (Tc) Surface Mount DFN0603-3 (SOT8013)
N-Channel 20V 1.3A (Ta) 300mW (Ta), 4.7W (Tc) Surface Mount DFN0603-3 (SOT8013)
N-Channel 20V 1.3A (Ta) 300mW (Ta), 4.7W (Tc) Surface Mount DFN0603-3 (SOT8013)
MOSFET, N-CH, 20V, 1.3A, DFN0603 ROHS COMPLIANT: YES
PMX100UN/SOT8013/DFN
PMX100UN/SOT8013/DFN
| Nexperia B.V. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMX100UNZ | 1727-PMX100UNZDKR-ND | 57AJ0310 | PMX100UNZ | PMX100UNZ |
| Product Name | 20 V, N-channel Trench MOSFET | Single FETs, MOSFETs | Mosfet, N-Ch, 20V, 1.3A, Dfn0603 Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 20 volts | 20 volts | |||
| IDSS | 1300 milliamps | 1300 milliamps | |||
| VGS(off) | 12 volts | ||||
| PD | 300 milliwatts | 300 milliwatts |
