Nexperia B.V. 20 V, N-channel Trench MOSFET PMX100UNZ

Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. Features and benefits Low threshold voltage Leadless ultra small package; 0.63 x 0.33 x 0.25 mm Trench MOSFET technology Low profile (0.25 mm) Applications Battery switch High-speed line driver Low-side load switch Switching circuits
  • 20 V, N-channel Trench MOSFET - PMX100UNZ - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-PMX100UNZDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMX100UNZTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMX100UNZCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - PMX100UNZ - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMX100UNZ - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 20V, 1.3A, Dfn0603 Rohs Compliant Nexperia - 57AJ0310 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. Features and benefits Low threshold voltage Leadless ultra small package; 0.63 x 0.33 x 0.25 mm Trench MOSFET technology Low profile (0.25 mm) Applications Battery switch High-speed line driver Low-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
20 V, N-channel Trench MOSFET - PMX100UNZ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
20 V, N-channel Trench MOSFET
PMX100UNZ
20 V, N-channel Trench MOSFET PMX100UNZ
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. Features and benefits Low threshold voltage Leadless ultra small package; 0.63 x 0.33 x 0.25 mm Trench MOSFET technology Low profile (0.25 mm) Applications Battery switch High-speed line driver Low-side load switch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology.

Features and benefits

  • Low threshold voltage
  • Leadless ultra small package; 0.63 x 0.33 x 0.25 mm
  • Trench MOSFET technology
  • Low profile (0.25 mm)

Applications

  • Battery switch
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PMX100UNZDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMX100UNZDKR-ND
Single FETs, MOSFETs 1727-PMX100UNZDKR-ND
N-Channel 20V 1.3A (Ta) 300mW (Ta), 4.7W (Tc) Surface Mount DFN0603-3 (SOT8013)

N-Channel 20V 1.3A (Ta) 300mW (Ta), 4.7W (Tc) Surface Mount DFN0603-3 (SOT8013)

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMX100UNZTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMX100UNZTR-ND
Single FETs, MOSFETs 1727-PMX100UNZTR-ND
N-Channel 20V 1.3A (Ta) 300mW (Ta), 4.7W (Tc) Surface Mount DFN0603-3 (SOT8013)

N-Channel 20V 1.3A (Ta) 300mW (Ta), 4.7W (Tc) Surface Mount DFN0603-3 (SOT8013)

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMX100UNZCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMX100UNZCT-ND
Single FETs, MOSFETs 1727-PMX100UNZCT-ND
N-Channel 20V 1.3A (Ta) 300mW (Ta), 4.7W (Tc) Surface Mount DFN0603-3 (SOT8013)

N-Channel 20V 1.3A (Ta) 300mW (Ta), 4.7W (Tc) Surface Mount DFN0603-3 (SOT8013)

Buy Now Datasheet
Single FETs, MOSFETs - PMX100UNZ - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PMX100UNZ
Single FETs, MOSFETs PMX100UNZ
PMX100UN/SOT8013/DFN 0603-3

PMX100UN/SOT8013/DFN0603-3

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMX100UNZ - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMX100UNZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMX100UNZ
PMX100UN/SOT8013/DFN 0603-3

PMX100UN/SOT8013/DFN0603-3

Supplier's Site
Mosfet, N-Ch, 20V, 1.3A, Dfn0603 Rohs Compliant Nexperia - 57AJ0310 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 20V, 1.3A, Dfn0603 Rohs Compliant Nexperia
57AJ0310
Mosfet, N-Ch, 20V, 1.3A, Dfn0603 Rohs Compliant Nexperia 57AJ0310
MOSFET, N-CH, 20V, 1.3A, DFN0603 ROHS COMPLIANT: YES

MOSFET, N-CH, 20V, 1.3A, DFN0603 ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number PMX100UNZ 1727-PMX100UNZDKR-ND PMX100UNZ PMX100UNZ 57AJ0310
Product Name 20 V, N-channel Trench MOSFET Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 20V, 1.3A, Dfn0603 Rohs Compliant Nexperia
MOSFET Operating Mode Enhancement
V(BR)DSS 20 volts 20 volts
IDSS 1300 milliamps 1300 milliamps
VGS(off) 12 volts
PD 300 milliwatts 300 milliwatts
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