Nexperia B.V. Single FETs, MOSFETs PSMN009-100B,118

Description
N-Channel 100V 75A (Tc) 230W (Tc) Surface Mount D2PAK
Request a Quote Datasheet
Description
N-Channel 100V 75A (Tc) 230W (Tc) Surface Mount D2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 1727-5268-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-5268-2-ND
Single FETs, MOSFETs 1727-5268-2-ND
N-Channel 100V 75A (Tc) 230W (Tc) Surface Mount D2PAK

N-Channel 100V 75A (Tc) 230W (Tc) Surface Mount D2PAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN009-100B,118 - 1090318-PSMN009-100B,118 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN009-100B,118
1090318-PSMN009-100B,118
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN009-100B,118 1090318-PSMN009-100B,118
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1090318-PSMN009-100B ,118 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 230W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 156nC @ 10V Max Input Capacitance: 8250pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.8 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1090318-PSMN009-100B,118
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 230W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 156nC @ 10V
Max Input Capacitance: 8250pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.8 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
N-Channel MOSFET Transistor
278-PSMN009-100B,118
N-Channel MOSFET Transistor 278-PSMN009-100B,118
N-channel TrenchMOS SiliconMAX standard level FET D2PAK 3-Pin Product overview: PSMN009-100B,118 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PSMN009-100B,118 can be used for catalog matching and distributor lookup.

N-channel TrenchMOS SiliconMAX standard level FET D2PAK 3-Pin Product overview: PSMN009-100B,118 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PSMN009-100B,118 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PSMN009-100B,118 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PSMN009-100B,118
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PSMN009-100B,118
MOSFET N-CH 100V 75A D2PAK

MOSFET N-CH 100V 75A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1727-5268-2-ND 1090318-PSMN009-100B,118 278-PSMN009-100B,118 PSMN009-100B,118
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN009-100B,118 N-Channel MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 100 volts
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