N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
PMPB20XNEA - 20 V, N-channel Trench MOSFET DFN 6-Pin Product overview: PMPB20XNEAZ from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20 V, DFN. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20 V, DFN, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMPB20XNEAZ can be used for catalog matching and distributor lookup.
N-Channel 20V 7.5A (Ta) 460mW (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6
N-Channel 20V 7.5A (Ta) 460mW (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6
N-Channel 20V 7.5A (Ta) 460mW (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6
Win Source Part Number: 1126969-PMPB20XNEAZ
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.5A, 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 460mW (Ta), 12.5W (Tc)
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: DFN2020MD-6
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
Vgs (Max): ±12V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 58 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Nexperia USA Inc.
Other Names: PMPB20XNEAZ-ND,1727-
Base Product Number: PMPB20
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
MOSFET PMPB20XNEA/SOT1220/R
MOSFET N-CH 20V 7.5A DFN2020MD-6
MOSFET, N-CH, 20V, 7.5A, DFN2020MD ROHS COMPLIANT: YES
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMPB20XNEAZ | 278-PMPB20XNEAZ | 1727-PMPB20XNEAZCT-ND | 1126969-PMPB20XNEAZ | PMPB20XNEAZ | PMPB20XNEAZ | 74AH1154 |
| Product Name | 20 V, N-channel Trench MOSFET | N-Channel 20 V DFN MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 20V, 7.5A, Dfn2020Md Rohs Compliant Nexperia |
| Polarity | N-Channel | N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 20 volts | ||||||
| IDSS | 7500 milliamps | ||||||
| VGS(off) | 1 volts |
