N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Trench MOSFET technology
Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
Exposed drain pad for excellent thermal conduction
Very low Drain-Source on-state resistance RDSon = 49 mΩ
Very fast switching
Applications
Low-side load switch and charging switch for portable devices
Power management in battery-driven portables
LED driver
DC-to-DC converters
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
- Trench MOSFET technology
- Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
- Exposed drain pad for excellent thermal conduction
- Very low Drain-Source on-state resistance RDSon = 49 mΩ
- Very fast switching
Applications
- Low-side load switch and charging switch for portable devices
- Power management in battery-driven portables
- LED driver
- DC-to-DC converters
