N-channel enhancement mode Trench MOSFET in a leadless DFN2020MD-6 (SOT1220) surface-mount package measuring 2 mm x 2 mm x 0.65 mm, with an exposed drain pad for thermal conduction and side wettable flanks for optical solder inspection. It has a drain-source voltage rating of 40 V, a continuous drain current of up to 8.1 A at 25 °C, and a typical on-state resistance of 15 mΩ at 4.5 V gate-source voltage. The device supports a junction temperature range from -55 °C to 150 °C and meets IEC 60134 for limiting values.
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
MOSFET N-CH 40V 8.1A DFN2020MD-6 Product overview: PMPB14XNX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 8.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 8.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMPB14XNX can be used for catalog matching and distributor lookup.
N-Channel 40V 8.1A (Ta) 3.8W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6
N-Channel 40V 8.1A (Ta) 3.8W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6
N-Channel 40V 8.1A (Ta) 3.8W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6
Mfr: Freescale Semiconductor
Category: Connectors,Interconn
Packaging: Bulk
Part Status: Obsolete
FET Type: P-Channel
Technology: Schottky
Drain to Source Voltage (Vdss): 50 V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Rds On (Max) @ Id, Vgs: 45mOhm @ 12A, 10V
MOSFET N-CH 40V 8.1A DFN2020MD-6
40V 8.1A 18mΩ@8.1A,4.5V 900mV@250uA N Channel DFN2020MD-6 MOSFETs ROHS
MOSFET, N-CH, 40V, 8.1A, DFN2020MD ROHS COMPLIANT: YES
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMPB14XNX | 278-PMPB14XNX | 1727-PMPB14XNXTR-ND | PMPB14XNX | PMPB14XNX | 71AH5494 | |
| Product Name | 40 V, N-channel Trench MOSFET | 40V 8.1A MOSFET Transistor | Single FETs, MOSFETs | Connectors,Interconnects | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet, N-Ch, 40V, 8.1A, Dfn2020Md Rohs Compliant Nexperia |
| MOSFET Operating Mode | Enhancement | Enhancement | |||||
| V(BR)DSS | 40 volts | 40 volts | 40 volts | ||||
| IDSS | 11500 milliamps | ||||||
| VGS(off) | 8 volts | 0.9000 volts | |||||
| PD | 1.9 milliwatts | 1.9 milliwatts | 3800 milliwatts |
