N-channel Trench MOSFET for switching applications in a SOT23 (TO-236AB) surface-mount package. It has a drain-source voltage rating of 30 V, a continuous drain current of 6 A at 25 ℃, and a peak drain current of 24 A. The drain-source on-state resistance is 17 mΩ at 10 V gate-source voltage and 25 ℃. Total power dissipation is 510 mW on a standard PCB footprint. The device is compatible with logic level inputs and features fast switching. Thermal resistance from junction to ambient is 88 to 104 K/W on a 6 cm² drain pad. The junction temperature range is -55 ℃ to 150 ℃.
MOSFET, N-CH, 30V, 7.6A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 37AJ0529 |
| Product Name | Mosfet, N-Ch, 30V, 7.6A, Sot-23-3; Transistor Polarity Nexperia |
| IDSS | 7600 milliamps |