Nexperia B.V. Mosfet, N-Ch, 30V, 7.6A, Sot-23-3; Transistor Polarity Nexperia PMV20EN

Description
MOSFET, N-CH, 30V, 7.6A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power RoHS Compliant: Yes
Description
MOSFET, N-CH, 30V, 7.6A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power RoHS Compliant: Yes
Datasheet
Datasheet Summary
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N-channel Trench MOSFET for switching applications in a SOT23 (TO-236AB) surface-mount package. It has a drain-source voltage rating of 30 V, a continuous drain current of 6 A at 25 ℃, and a peak drain current of 24 A. The drain-source on-state resistance is 17 mΩ at 10 V gate-source voltage and 25 ℃. Total power dissipation is 510 mW on a standard PCB footprint. The device is compatible with logic level inputs and features fast switching. Thermal resistance from junction to ambient is 88 to 104 K/W on a 6 cm² drain pad. The junction temperature range is -55 ℃ to 150 ℃.

Datasheet Summary
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N-channel Trench MOSFET for switching applications in a SOT23 (TO-236AB) surface-mount package. It has a drain-source voltage rating of 30 V, a continuous drain current of 6 A at 25 ℃, and a peak drain current of 24 A. The drain-source on-state resistance is 17 mΩ at 10 V gate-source voltage and 25 ℃. Total power dissipation is 510 mW on a standard PCB footprint. The device is compatible with logic level inputs and features fast switching. Thermal resistance from junction to ambient is 88 to 104 K/W on a 6 cm² drain pad. The junction temperature range is -55 ℃ to 150 ℃.

Suppliers

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Mosfet, N-Ch, 30V, 7.6A, Sot-23-3; Transistor Polarity Nexperia - 37AJ0529 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 7.6A, Sot-23-3; Transistor Polarity Nexperia
37AJ0529
Mosfet, N-Ch, 30V, 7.6A, Sot-23-3; Transistor Polarity Nexperia 37AJ0529
MOSFET, N-CH, 30V, 7.6A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power RoHS Compliant: Yes

MOSFET, N-CH, 30V, 7.6A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 37AJ0529
Product Name Mosfet, N-Ch, 30V, 7.6A, Sot-23-3; Transistor Polarity Nexperia
IDSS 7600 milliamps
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