Nexperia B.V. Datasheets for Transistors

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
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Product Name Notes
PDTC114YU
PDTC115ET
PDTC123ET
PDTC123JQBZ
PDTC123JQCZ
PDTC123JT/1R
PDTC123JU
PDTC123TU115
PDTC124EQA
PDTC124EQBZ
PDTC124EQCZ
PDTC124ET/1R
PDTC124XQBZ
PDTC124XQCZ
PDTC124XT
PDTC124XU
PDTC143EQBZ
PDTC143EQCZ
PDTC143EU
PDTC143EU,115.
PDTC143TT
PDTC143XQBZ
PDTC143XQCZ
PDTC143XU,115.
PDTC143ZQBZ
PDTC143ZQCZ
PDTC143ZT
PDTC143ZU
PDTC143ZU/1X
PDTC144ET
PDTC144ET/DG/B2,21
PDTC144ET/DG/B4,21
PDTC144ET/DG/B4,215
PDTC144EU/1X
PDTC144EU/6X
PDTC144EU/HE115
PDTD113EU
PDTD113ZT
PDTD113ZT 215.
PDTD113ZT/1R
PDTD113ZU
PDTD113ZU135
PDTD114ET
PDTD114EU
PDTD123ET
PDTD123EU
PDTD123YQA
PDTD123YU
PDTD143EQA
PDTD143ET
PDTD143XQA
PEMB1,115
PEMB14,115
PEMB15,115
PEMB16,115
PEMB17,115
PEMB18,115
PEMB19,115
PEMB30,115
PEMB4,115
PEMD17,115
PEMD18,115
PEMD19,115
PEMF21,115
PEMH13
PEMH17,115
PEMH24,115
PEMH30,115
PEMH30,315
PEMH7,115
PEMH9115
PESD2IVN27-UX
PESD5V0V4UG
PESD5Z2.5
PESD9V0W1BCSFYL
PH0930DLS,115
PH1225AL,115
PH1330AL,115
PH1530CL,115
PH1730AL,115
PH1930AL,115
PH20100S,115
PH2230DLSX
PH2525L,115
PH2530AL,115
PH3030AL,115
PH3120L,115
PH3230S,115
PH3830DL115
PH3830DLS115
PH3830DLX
PH4030AL,115
PH4030DLAX
PH4840S,115
PH5030AL
PH5030AL,115
PH5830DLX
PH6030AL,115
PH6030DLV-CBSNX
PH6030DLVX
PH6325L,115
PH6930DL115
PH6930DLX
PH7030AL,115
PH7630DLX
PH7730DL,115
PH7730DLX
PH8230E,115
PH9130AL,115
PH955L,115
PHB110NQ08T,118
PHB18NQ10T,118
PHB191NQ06LT,118
PHB20N06T,118
PHB20NQ20T,118
PHB33NQ20T,118
PHB45NQ15T,118
PHB66NQ03LT
PHB66NQ03LT,118
PHC21025,118
PHC2300,118
PHD101NQ03LT,118
PHD20N06T,118
PHD38N02LT,118
PHD71NQ03LT,118
PHD97NQ03LT,118
PHD9NQ20T,118
PHK04P02T,518
PHK12NQ03LT,518
PHK13N03LT,518
PHK18NQ03LT,518
PHK31NQ03LT,518
PHK5NQ15T,518
PHKD13N03LT,118
PHKD13N03LT,518
PHKD3NQ10T,518
PHKD6N02LT,518
PHM2230DLSX
PHN203,518
PHN210T,118
PHP101NQ03LT
PHP18NQ10T,127
PHP18NQ11T,127
PHP191NQ06LT,127
PHP20N06T,127
PHP20NQ20T,127
PHP225,118
PHP23NQ11T,127
PHP27NQ11T,127
PHP28NQ15T,127
PHP29N08T,127
PHP30NQ15T,127
PHP33NQ20T,127
PHP36N03LT,127
PHP45NQ10T,127
PHP45NQ11T,127
PHP79NQ08LT,127
PHP9NQ20T,127
PHPT60410PY
PHPT60603NY,115
50 V, 100 mA NPN resistor-equipped transistors -- PDTC123JQAX
50 V, 100 mA NPN resistor-equipped transistors -- PDTC123JQAZ
50 V, 100 mA NPN resistor-equipped transistors -- PDTC124EQAX
50 V, 100 mA NPN resistor-equipped transistors -- PDTC124EQAZ
50 V, 100 mA NPN resistor-equipped transistors -- PDTC143EQAX
50 V, 100 mA NPN resistor-equipped transistors -- PDTC143EQAZ
50 V, 100 mA NPN resistor-equipped transistors -- PDTC143XQAX
50 V, 100 mA NPN resistor-equipped transistors -- PDTC143XQAZ
50 V, 100 mA NPN resistor-equipped transistors -- PDTC143ZQAX
50 V, 100 mA NPN resistor-equipped transistors -- PDTC143ZQAZ
50 V, 100 mA NPN resistor-equipped transistors -- PDTC144EQAX
50 V, 100 mA NPN resistor-equipped transistors -- PDTC144EQAZ
100 mA NPN Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Features and benefits 100 mA...
50 V, 100 mA NPN resistor-equipped transistors -- PDTC123JQB-QZ
50 V, 100 mA NPN resistor-equipped transistors -- PDTC124EQB-QZ
50 V, 100 mA NPN resistor-equipped transistors -- PDTC124XQB-QZ
50 V, 100 mA NPN resistor-equipped transistors -- PDTC143EQB-QZ
50 V, 100 mA NPN resistor-equipped transistors -- PDTC143XQB-QZ
50 V, 100 mA NPN resistor-equipped transistors -- PDTC143ZQB-QZ
50 V, 100 mA NPN resistor-equipped transistors -- PDTC144EQB-QZ
50 V, 100 mA NPN resistor-equipped transistors -- PDTC144EQBYL
50 V, 100 mA NPN resistor-equipped transistors -- PDTC144EQBZ
100 mA NPN Resistor-Equipped Transistor (RET) family in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. Features and benefits 100 mA output current capability...
50 V, 100 mA NPN resistor-equipped transistors -- PDTC123JQC-QZ
50 V, 100 mA NPN resistor-equipped transistors -- PDTC124EQC-QZ
50 V, 100 mA NPN resistor-equipped transistors -- PDTC124XQC-QZ
50 V, 100 mA NPN resistor-equipped transistors -- PDTC143EQC-QZ
50 V, 100 mA NPN resistor-equipped transistors -- PDTC143XQC-QZ
50 V, 100 mA NPN resistor-equipped transistors -- PDTC143ZQC-QZ
50 V, 100 mA NPN resistor-equipped transistors -- PDTC144EQC-QZ
50 V, 100 mA NPN resistor-equipped transistors -- PDTC144EQCZ
100 mA NPN Resistor-Equipped Transistor (RET) family in an ultra small DFN1412D-3 (SOT8009) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. Features and benefits 100 mA output current capability...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kOhm, R2: 10 kOhm -- PDTC123YQB-QZ
100 mA NPN Resistor-Equipped Transistor (RET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. PNP complement: PDTA123YQB-Q Features and benefits 100 mA output...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kOhm, R2: 10 kOhm -- PDTC123YQBZ
100 mA NPN Resistor-Equipped Transistor (RET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. PNP complement: PDTA123YQB Features and benefits 100 mA output...
50 V, 500 mA NPN resistor-equipped transistor; R1 = 1 kOhm, R2 = 1 kOhm -- PDTD113ET-QR
500 mA NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. Features and benefits Built-in bias resistors Reduces component count Simplifies circuit design Reduces pick and...
50 V, 500 mA NPN resistor-equipped transistor; R1 = 1 kOhm, R2 = 1 kOhm -- PDTD113ET,215
500 mA NPN Resistor-Equipped Transistors (RET) family. Features and benefits Built-in bias resistors Reduces component count Simplifies circuit design Reduces pick and place costs 500 mA output current capability 10...
50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ -- PDTD123ET,215
500 mA NPN Resistor-Equipped Transistors (RET) family. Features and benefits Built-in bias resistors Simplifies circuit design 500 mA output current capability Reduces component count Reduces pick and place costs ±10...
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open -- PDTD123TT,215
500 mA NPN Resistor-Equipped Transistors (RET) family. Features and benefits Built-in bias resistors Simplifies circuit design 500 mA output current capability Reduces component count Reduces pick and place costs AEC-Q101...
N-channel TrenchMOS logic level FET -- PHB21N06LT,118
N-channel TrenchMOS logic level FET -- PHB32N06LT,118
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications...
50 V, 500 mA NPN resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ -- PDTD113ZT,215
50 V, 500 mA NPN resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ -- PDTD113ZTVL
NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ -- PDTD113ZT-QR
NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ -- PDTD113ZT-QVL
NPN 500 mA Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB113ZT Features and benefits Built-in bias resistors Reduces component count Simplifies circuit design...
40 V, 6 A NPN high power bipolar transistor -- PHPT60406NY-QX
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60406PY-Q Features and benefits High thermal power dissipation capability High temperature applications up...
40 V, 6 A NPN high power bipolar transistor -- PHPT60406NYX
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60406PY Features and benefits High thermal power dissipation capability High temperature applications up...
40 V, 10 A NPN high power bipolar transistor -- PHPT60410NY-QX
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60410PY-Q Features and benefits High thermal power dissipation capability High temperature applications up...
40 V, 10 A NPN high power bipolar transistor -- PHPT60410NYX
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60410PY Features and benefits High thermal power dissipation capability High temperature applications up...
40 V, 15 A NPN high power bipolar transistor -- PHPT60415NY-QX
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60415PY-Q Features and benefits High thermal power dissipation capability High temperature applications up...
40 V, 15 A NPN high power bipolar transistor -- PHPT60415NYX
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60415PY Features and benefits High thermal power dissipation capability High temperature applications up...
60 V, 3 A NPN high power bipolar transistor -- PHPT60603NY-QX
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY-Q Features and benefits High thermal power dissipation capability High temperature applications up...
60V, 3 A NPN high power bipolar transistor -- PHPT60603NYX
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY Features and benefits High thermal power dissipation capability High temperature applications up...
60 V, 6 A NPN high power bipolar transistor -- PHPT60606NY-QX
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60606PY-Q Features and benefits High thermal power dissipation capability High temperature applications up...
60 V, 6 A NPN high power bipolar transistor -- PHPT60606NYX
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60606PY Features and benefits High thermal power dissipation capability High temperature applications up...
50 V, 500 mA NPN resistor-equipped transistors -- PDTD113EQAX
50 V, 500 mA NPN resistor-equipped transistors -- PDTD113EQAZ
50 V, 500 mA NPN resistor-equipped transistors -- PDTD113ZQAX
50 V, 500 mA NPN resistor-equipped transistors -- PDTD113ZQAZ
50 V, 500 mA NPN resistor-equipped transistors -- PDTD114EQAX
50 V, 500 mA NPN resistor-equipped transistors -- PDTD114EQAZ
50 V, 500 mA NPN resistor-equipped transistors -- PDTD123EQAX
50 V, 500 mA NPN resistor-equipped transistors -- PDTD123EQAZ
50 V, 500 mA NPN resistor-equipped transistors -- PDTD123YQAX
50 V, 500 mA NPN resistor-equipped transistors -- PDTD123YQAZ
50 V, 500 mA NPN resistor-equipped transistors -- PDTD143EQAX
50 V, 500 mA NPN resistor-equipped transistors -- PDTD143EQAZ
50 V, 500 mA NPN resistor-equipped transistors -- PDTD143XQAX
50 V, 500 mA NPN resistor-equipped transistors -- PDTD143XQAZ
NPN Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Features and benefits 500 mA output current...
NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = open -- PDTC115TMB,315
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA115TMB. Features and benefits 100 mA output current capability Reduces component count...
NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ -- PDTC123JMB,315
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123JMB. Features and benefits 100 mA output current capability Reduces component count...
NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open -- PDTC123TMB,315
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123TMB. Features and benefits 100 mA output current capability Reduces component count...
NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ -- PDTC123YMB,315
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123YMB. Features and benefits 100 mA output current capability Reduces component count...
NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PDTC124EMB,315
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124EMB. Features and benefits 100 mA output current capability Reduces component count...
NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = open -- PDTC124TMB,315
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124TMB. Features and benefits 100 mA output current capability Reduces component count...
NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ -- PDTC124XMB,315
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124XMB. Features and benefits 100 mA output current capability Reduces component count...
NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = open -- PDTC144TMB,315
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA144TMB. Features and benefits 100 mA output current capability Reduces component count...
NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 10 kΩ -- PDTC144VMB,315
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA144VMB. Features and benefits 100 mA output current capability Reduces component count...
NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ -- PDTC144WMB,315
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA144WMB. Features and benefits 100 mA output current capability Reduces component count...
NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ -- PDTC115EMB,315
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA115EMB Features and benefits 20 mA output current capability Reduces component count...
NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ -- PDTC123EMB,315
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123EMB. Features and benefits 100 mA output current capability Reduces component count...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open -- PDTC143TMB,315
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143TMB Features and benefits 100 mA output current capability Reduces component count...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = open -- PDTC115TM,315
50 V, 100 mA NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = open -- PDTC115TM-QYL
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA115TM Features and benefits Built-in bias resistors Simplifies circuit design Reduces component...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ -- PDTC123JM-QYL
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123JM-Q Features and benefits 100 mA output current capability Built-in bias resistors...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ -- PDTC123JM,315
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123JM Features and benefits 100 mA output current capability Built-in bias resistors...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open -- PDTC123TM-QYL
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123TM-Q Features and benefits 100 mA output current capability Built-in bias resistors...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open -- PDTC123TM,315
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123TM Features and benefits 100 mA output current capability Built-in bias resistors...
NPN resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 10 kOhm -- PDTC123YM-QYL
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123YM-Q Features and benefits Built-in bias resistors Simplifies circuit design Reduces component...
NPN resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 10 kOhm -- PDTC123YM,315
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123YM Features and benefits Built-in bias resistors Simplifies circuit design Reduces component...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PDTC124EM-QYL
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124EM-Q Features and benefits 100 mA output current capability Built-in bias resistors...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PDTC124EM,315
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124EM Features and benefits 100 mA output current capability Built-in bias resistors...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = open -- PDTC124TM,315
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124TM Features and benefits Built-in bias resistors Simplifies circuit design Reduces component...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ -- PDTC143EM-QYL
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143EM-Q Features and benefits 100 mA output current capability Built-in bias resistors...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ -- PDTC143EM,315
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143EM Features and benefits 100 mA output current capability Built-in bias resistors...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ -- PDTC143XM-QYL
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143XM-Q Features and benefits 100 mA output current capability Built-in bias resistors...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ -- PDTC143XM,315
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143XM Features and benefits 100 mA output current capability Built-in bias resistors...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ -- PDTC143ZM-QYL
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143ZM-Q Features and benefits 100 mA output current capability Built-in bias resistors...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ -- PDTC143ZM,315
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143ZM Features and benefits 100 mA output current capability Built-in bias resistors...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PDTC144EM-QYL
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA144EM-Q Features and benefits 100 mA output current capability Built-in bias resistors...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PDTC144EM,315
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA144EM Features and benefits 100 mA output current capability Built-in bias resistors...
NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ -- PDTC143EMB,315
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143EMB. Features and benefits 100 mA output current capability Reduces component count Built-in...
NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ -- PDTC143XMB,315
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143XMB. Features and benefits 100 mA output current capability Reduces component count Built-in...
NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ -- PDTC143ZMB,315
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143ZMB. Features and benefits 100 mA output current capability Reduces component count Built-in...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PDTC144EMB,315
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA144EMB Features and benefits 100 mA output current capability Reduces component count Built-in...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ -- PDTC123ET-QR
NPN Resistor-Equipped Transistor (RET) in a small SOT23 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123ET-Q Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ -- PDTC123ET,185
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ -- PDTC123ET,215
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ -- PDTC123ETVL
NPN Resistor-Equipped Transistor (RET) in a small SOT23 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123ET Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ -- PDTC123JT,215
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ -- PDTC123JT,235
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ -- PDTC123JT-QR
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ -- PDTC123JT-QVL
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ -- PDTC123JT/A2,215
NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123JT Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PDTC124ET-QR
50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PDTC124ET-QVL
NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124ET-Q Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PDTC124ET,185
50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PDTC124ET,215
50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PDTC124ET,235
50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PDTC124ET/DG,215
NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124ET Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ -- PDTC143ET,215
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ -- PDTC143ET,235
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ -- PDTC143ET-QR
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ -- PDTC143ET-QVL
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ -- PDTC143ET/A2,215
NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143ET Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ -- PDTC143ZT-QR
NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143ZT-Q Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ -- PDTC143ZT,215
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ -- PDTC143ZT,235
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ -- PDTC143ZT/A2,215
NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143ZT Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PDTC144ET,215
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PDTC144ET-QR
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PDTC144ET-QVL
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PDTC144ET/HER
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PDTC144ETVL
NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA144ET Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit...
50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ -- PDTD123YT-QR
50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ -- PDTD123YT-QZ
NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB123YT-Q Features and benefits Built-in bias resistors Simplifies circuit design 500 mA output current...
50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ -- PDTD123YT,215
50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ -- PDTD123YT/APGR
50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ -- PDTD123YT/APGVL
NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB123YT Features and benefits Built-in bias resistors Simplifies circuit design 500 mA output current...
500 mA, 50 V NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ -- PDTD143ET-QR
NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB143ET-Q Features and benefits 500 mA output current capability Built-in bias resistors Simplifies circuit...
50 V, 500 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ -- PDTD143ETR
50 V, 500 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ -- PDTD143ETVL
NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB143ET Features and benefits 500 mA output current capability Built-in bias resistors Simplifies circuit...
50 V, 500 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ -- PDTD143XTR
50 V, 500 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ -- PDTD143XTVL
NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB143XT Features and benefits 500 mA output current capability Built-in bias resistors Simplifies circuit...
NPN resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 10 kOhm -- PDTC123YT-QR
NPN resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 10 kOhm -- PDTC123YT-QVL
NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs...
50 V, 20 mA NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ -- PDTC115ET,215
NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA115ET Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = open -- PDTC115TT,215
NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA115TT Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open -- PDTC123TT,215
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open -- PDTC123TT,235
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open -- PDTC123TT-QR
NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123TT Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design...
NPN resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 10 kOhm -- PDTC123YT,215
NPN resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 10 kOhm -- PDTC123YTR
NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123YT Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = open -- PDTC124TT,215
NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124TT Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ -- PDTC124XT-QR
NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124XT-Q Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ -- PDTC124XT,215
NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124XT Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ -- PDTC143XT-QR
NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143XT-Q Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ -- PDTC143XT,185
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ -- PDTC143XT,215
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ -- PDTC143XTVL
NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143XT Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = open -- PDTC144TT,215
NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA144TT Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 10 kΩ -- PDTC144VT-QR
NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA144VT-Q Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 10 kΩ -- PDTC144VT,215
NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA144VT Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ -- PDTC144WT-QR
NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA144WT-Q Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ -- PDTC144WT,215
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ -- PDTC144WT/A2,215
NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA144WT Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick...
50 V, 500 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ -- PDTD114ET-QR
50 V, 500 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ -- PDTD114ET-QVL
NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB114ET-Q Features and benefits 500 mA output current capability Built-in bias resistors Simplifies circuit design...
50 V, 500 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ -- PDTD114ETR
50 V, 500 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ -- PDTD114ETVL
NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB114ET Features and benefits 500 mA output current capability Built-in bias resistors Simplifies circuit design...
50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ -- PDTD123ET-QR
NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB123ET-Q Features and benefits Built-in bias resistors Simplifies circuit design 500 mA output current capability...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ -- PDTC123EU,115
NPN Resistor-Equipped Transistor (RET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123EU Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces...
50 V, 100 mA NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open -- PDTC143TT,215
50 V, 100 mA NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open -- PDTC143TT,235
50 V, 100 mA NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open -- PDTC143TT-QR
NPN Resistor-Equipped Transistor (RET) in a very small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143TT Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ -- PDTC143ZU-QAX
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ -- PDTC143ZU-QX
NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces...
50 V, 500 mA NPN resistor-equipped transistor -- PDTD114EU-QX
50 V, 500 mA NPN resistor-equipped transistor -- PDTD123EU-QX
NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features and benefits 500 mA output current capability Built-in bias resistors Simplifies circuit design Reduces...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ -- PDTC124XU-QX
NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ -- PDTC114YU,115
50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ -- PDTC114YU-QF
50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ -- PDTC114YU-QX
50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ -- PDTC114YU/A2,115
50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ -- PDTC114YU/ZLX
50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ -- PDTC114YUF
NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA114YU Features and benefits 100 mA output current capability Built-in bias resistors Simplifies...
50 V, 20 mA NPN resistor-equipped transistor; R1 = 100 kOhm, R2 = 100 kOhm -- PDTC115EU-QX
NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA115EU-Q Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count...
50 V, 20 mA NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ -- PDTC115EU,115
50 V, 20 mA NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ -- PDTC115EU/DG,115
50 V, 20 mA NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ -- PDTC115EUF
NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA115EU Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = open -- PDTC115TU,115
NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA115TU Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ -- PDTC123JU,115
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ -- PDTC123JU-QX
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ -- PDTC123JU/A2,115
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ -- PDTC123JU/ZLX
NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123JU Features and benefits 100 mA output current capability Built-in bias resistors Simplifies...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open -- PDTC123TU,115
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open -- PDTC123TU-QX
NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123TU Features and benefits 100 mA output current capability Built-in bias resistors Simplifies...
NPN resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 10 kOhm -- PDTC123YU-QX
NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123YU-Q Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count...
NPN resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 10 kOhm -- PDTC123YU,115
NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123YU Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PDTC124EU,115
50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PDTC124EU,135
50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PDTC124EU-QF
50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PDTC124EU-QX
50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PDTC124EU/A2,135
50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PDTC124EU/DG,115
50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PDTC124EU/ZLF
50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PDTC124EU/ZLX
NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124EU Features and benefits 100 mA output current capability Built-in bias resistors Simplifies...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = open -- PDTC124TU,115
NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124TU Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ -- PDTC124XU,115
NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124XU Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ -- PDTC143EU,115
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ -- PDTC143EU-QX
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ -- PDTC143EU/ZLX
NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143EU Features and benefits 100 mA output current capability Built-in bias resistors Simplifies...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open -- PDTC143TU,115
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open -- PDTC143TU,135
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open -- PDTC143TU/ZLF
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open -- PDTC143TU/ZLX
NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143TU Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ -- PDTC143XU-QF
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ -- PDTC143XU-QX
NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143XU-Q Features and benefits 100 mA output current capability Built-in bias resistors Simplifies...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ -- PDTC143XU,115
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ -- PDTC143XUF
NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143XU Features and benefits 100 mA output current capability Built-in bias resistors Simplifies...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ -- PDTC143ZU,115
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ -- PDTC143ZU/ZLX
NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143ZU Features and benefits 100 mA output current capability Built-in bias resistors Simplifies...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PDTC144EU,115
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PDTC144EU,135
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PDTC144EU/HEF
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PDTC144EU/HEX
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PDTC144EU/ZLF
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PDTC144EU/ZLX
50 V, 100 mA PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PDTC144EU-QF
50 V, 100 mA PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PDTC144EU-QX
NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA144EU Features and benefits 100 mA output current capability Built-in bias resistors Simplifies...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = open -- PDTC144TU,115
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = open -- PDTC144TU-QX
NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA144TU Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 10 kΩ -- PDTC144VU,115
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 10 kΩ -- PDTC144VU-QX
NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA144VU Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ -- PDTC144WU,115
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ -- PDTC144WU,185
NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA144WU Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count...
50 V, 500 mA NPN resistor-equipped transistor -- PDTD113EU-QF
50 V, 500 mA NPN resistor-equipped transistor -- PDTD113EU-QX
50 V, 500 mA NPN resistor-equipped transistor -- PDTD113EUF
50 V, 500 mA NPN resistor-equipped transistor -- PDTD113EUX
NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB113EU Features and benefits 500 mA output current capability Built-in bias resistors Simplifies...
50 V, 500 mA NPN resistor-equipped transistor -- PDTD113ZUF
50 V, 500 mA NPN resistor-equipped transistor -- PDTD113ZUX
NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB113ZU Features and benefits 500 mA output current capability Built-in bias resistors Simplifies...
50 V, 500 mA NPN resistor-equipped transistor -- PDTD114EUF
50 V, 500 mA NPN resistor-equipped transistor -- PDTD114EUX
NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB114EU Features and benefits 500 mA output current capability Built-in bias resistors Simplifies...
50 V, 500 mA NPN resistor-equipped transistor -- PDTD123EUF
50 V, 500 mA NPN resistor-equipped transistor -- PDTD123EUX
NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB123EU Features and benefits 500 mA output current capability Built-in bias resistors Simplifies...
50 V, 500 mA NPN resistor-equipped transistor -- PDTD123YUF
50 V, 500 mA NPN resistor-equipped transistor -- PDTD123YUX
NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB123YU Features and benefits 500 mA output current capability Built-in bias resistors Simplifies...
50 V, 500 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ -- PDTD143EU-QF
50 V, 500 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ -- PDTD143EU-QX
NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB143EU-Q Features and benefits 500 mA output current capability Built-in bias resistors Simplifies...
50 V, 500 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ -- PDTD143EUF
50 V, 500 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ -- PDTD143EUX
NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB143EU Features and benefits 500 mA output current capability Built-in bias resistors Simplifies...
50 V, 500 mA NPN resistor-equipped transistor -- PDTD143XUF
50 V, 500 mA NPN resistor-equipped transistor -- PDTD143XUX
NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB143XU Features and benefits 500 mA output current capability Built-in bias resistors Simplifies...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open -- PDTC143TM-QYL
NPN Resistor-Equipped Transistor (RET) in a very small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143TM-Q Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open -- PDTC143TM,315
NPN Resistor-Equipped Transistor (RET) in a very small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143TM Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = open -- PDTC144TM,315
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = open -- PDTC144TM-QYL
NPN Resistor-Equipped Transistor (RET) in an leadless ultra small SOT883 (SC-101) Surface Mounted Device (SMD) plastic package. PNP complement: PDTA144TM Features and benefits Built-in bias resistors Simplifies circuit design Reduces...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 10 kΩ -- PDTC144VM,315
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 10 kΩ -- PDTC144VM-QYL
NPN Resistor-Equipped Transistor (RET) in an leadless ultra small SOT883 (SC-101) Surface Mounted Device (SMD) plastic package. PNP complement: PDTA144VM Features and benefits Built-in bias resistors Simplifies circuit design Reduces...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ -- PDTC144WM-QYL
NPN Resistor-Equipped Transistor (RET) in an leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick...
50 V, 20 mA NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ -- PDTC115EM,315
50 V, 20 mA NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ -- PDTC115EM-QYL
NPN Resistor-Equipped Transistor (RET) in an leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA115EM Features and benefits Built-in bias resistors Simplifies circuit design Reduces component...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ -- PDTC123EM,315
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ -- PDTC123EM-QYL
NPN Resistor-Equipped Transistor (RET) in an leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123EM Features and benefits Built-in bias resistors Simplifies circuit design Reduces component...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ -- PDTC124XM-QYL
NPN Resistor-Equipped Transistor (RET) in an leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124XM-Q Features and benefits Built-in bias resistors Simplifies circuit design Reduces component...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ -- PDTC124XM,315
NPN Resistor-Equipped Transistor (RET) in an leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124XM Features and benefits Built-in bias resistors Simplifies circuit design Reduces component...
50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ -- PDTC144WM,315
NPN Resistor-Equipped Transistor (RET) in an leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA144WM Features and benefits Built-in bias resistors Simplifies circuit design Reduces component...
50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PEMH2,115
50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PEMH2,315
NPN/NPN double Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PEMD12 PNP/PNP complement: PEMB2 Features and benefits 100 mA output...
50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 47 kΩ -- PEMH13,115
50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 47 kΩ -- PEMH13,315
50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 47 kΩ -- PEMH13/DG,115
NPN/NPN double Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PEMD13 PNP/PNP complement: PEMB13 Features and benefits 100 mA output...
50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 10 kOhm, R2 = 10 kOhm -- PEMH11,115
50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 10 kOhm, R2 = 10 kOhm -- PEMH11,315
NPN/NPN double Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PEMD3 PNP/PNP complement: PEMB11 Features and benefits 100 mA output...
50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 10 kOhm, R2 = 47 kOhm -- PEMH9,115
50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 10 kOhm, R2 = 47 kOhm -- PEMH9,315
50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 10 kOhm, R2 = 47 kOhm -- PEMH9/A2,115
NPN/NPN double Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PEMB9 NPN/PNP complement: PEMD9 Features and benefits 100 mA output...
NPN/NPN general purpose double transistor -- PEMX1,115
NPN/NPN general purpose double transistor -- PEMX1,315
NPN/NPN double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PEMT1 Features and benefits 300 mW total power dissipation Very small 1.6...
50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ -- PEMH10,115
50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ -- PEMH10/DG,115
NPN/NPN resistor-equipped double transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PEMD10 PNP/PNP complement: PEMB10 Features and benefits 100 mA output...
50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 10 kΩ -- PEMH18,115
NPN/NPN resistor-equipped double transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PEMH1,115
NPN/NPN Resistor-Equipped double Transistor (RET) in an ultra small flat lead SOT666 Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit...
50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 2.2 kOhm, R2 = 2.2 kOhm -- PEMH20,115
NPN/NPN Resistor-Equipped double Transistor (RET) in an ultra small flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PEMD20 PNP/PNP complement: PEMB20 Features and benefits Built-in bias resistors Simplifies...
NPN/NPN resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ -- PEMH15,115
NPN/NPN Resistor-Equipped Transistor (RET) in a SOT666 ultra small and flat lead Surface Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies...
50 V, 100 mA NPN/NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = open -- PEMH19,115
NPN/NPN Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. Features and benefits Built-in bias resistors Simplified circuit design Reduces component count Reduces...
50 V, 100 mA NPN/NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = open -- PEMH14,115
NPN/NPN Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PEMD14 PNP/PNP complement: PEMB14 Features and benefits Built-in bias resistors Simplified...
50 V, 100 mA NPN/NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ -- PEMH16,115
NPN/NPN Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PEMD16 PNP/PNP complement: PEMB16 Features and benefits Built-in bias resistors Simplified...
50 V, 100 mA NPN/NPN resistor-equipped transistor; R1 = 10 kOhm, R2 = open -- PEMH4,115
NPN/NPN Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PEMD4 Features and benefits Built-in bias resistors Simplified circuit design Reduction...
50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ and R1 = 2.2 kΩ, R2 = 47 kΩ -- PEMD48,115
NPN/PNP double Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies...
50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ -- PEMD10,115
50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ -- PEMD10/DG,115
NPN/PNP double Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PEMH10 PNP/PNP complement: PEMB10 Features and benefits 100 mA output...
50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 47 kΩ -- PEMD13,115
NPN/PNP double Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PEMH13 PNP/PNP complement: PEMB13 Features and benefits 100 mA output...
50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ -- PEMD15,115
NPN/PNP double Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PEMH15 PNP/PNP complement: PEMB15 Features and benefits 100 mA output...
50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 22 kΩ, R2 = 47 kΩ -- PEMD16,115
NPN/PNP double Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PEMH16 PNP/PNP complement: PEMB16 Features and benefits 100 mA output...
50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PEMD12,115
50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PEMD12,315
NPN/PNP double Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PEMH2 PNP/PNP complement: PEMB2 Features and benefits 100 mA output...
50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = open -- PEMD30,115
50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = open -- PEMD30,315
NPN/PNP double Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PEMH30 PNP/PNP complement: PEMB30 Features and benefits 100 mA output...
50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = open -- PEMD4,115
NPN/PNP double Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PEMH4 PNP/PNP complement: PEMB4 Features and benefits Built-in bias resistors...
50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ -- PEMD9,115
50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ -- PEMD9,315
NPN/PNP double Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PEMH9 PNP/PNP complement: PEMB9 Features and benefits 100 mA output...
NPN/PNP general purpose transistor -- PEMZ1,115
NPN/PNP double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits 300 mW total power dissipation Very small 1.6 x 1.2 mm...
NPN/PNP general purpose double transistor -- PEMZ7,115
NPN/PNP general purpose double transistor -- PEMZ7,315
NPN/PNP low VCEsat double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD)plastic package. Features and benefits 300 mW total power dissipation Very small 1.6 x...
50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PEMD2,115
50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PEMD2,315
NPN/PNP Resistor-Equipped double Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PEMH1 PNP/PNP complement: PEMB1 Features and benefits 100 mA output...
50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ -- PEMD3,115
50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ -- PEMD3,315
NPN/PNP Resistor-Equipped double Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PEMB11 NPN/NPN complement: PEMH11 Features and benefits 100 mA output...
50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 2.2 kOhm, R2 = 2.2 kOhm -- PEMD20,115
NPN/PNP Resistor-Equipped double Transistor (RET) in an ultra small flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PEMH20 PNP/PNP complement: PEMB20 Features and benefits Built-in bias resistors Simplifies...
50 V, 20 mA NPN/PNP resistor-equipped double transistor; R1 = 100 kOhm, R2 = 100 kOhm -- PEMD24,115
NPN/PNP Resistor-Equipped double Transistor (RET) in an ultra small flat lead SOT666 Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PEMB24 Features and benefits Built-in bias resistors Simplifies circuit design Reduces...
50 V, 100 mA NPN/PNP resistor-equipped transistor; R1 = 47 kOhm, R2 = open -- PEMD14,115
NPN/PNP Resistor-Equipped Transistor (RET) in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PEMB14 NPN/NPN complement: PEMH14 Features and benefits Built-in bias resistors Simplifies...
50 V, 100 mA NPN/PNP Resistor-Equipped Transistor; R1 = 4.7 kΩ, R2 = open -- PEMD6,115
NPN/PNP Resistor-Equipped Transistor (RET) in a ultra small flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PEMH7 PNP/PNP complement: PEMB3 Features and benefits Built-in bias resistors Simplifies circuit...
40 V, 6 A PNP high power bipolar transistor -- PHPT60406PY-QX
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60406NY-Q Features and benefits High thermal power dissipation capability Suitable for high temperature...
40 V, 6 A PNP high power bipolar transistor -- PHPT60406PYX
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60406NY. Features and benefits High thermal power dissipation capability Suitable for high temperature...
40 V, 10 A PNP high power bipolar transistor -- PHPT60410PY-QX
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60410NY-Q Features and benefits High thermal power dissipation capability Suitable for high temperature...
40 V, 10 A PNP high power bipolar transistor -- PHPT60410PYX
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60410NY Features and benefits High thermal power dissipation capability Suitable for high temperature...
40 V, 15 A PNP high power bipolar transistor -- PHPT60415PY-QX
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60415NY-Q Features and benefits High thermal power dissipation capability High temperature applications up...
40 V, 15 A PNP high power bipolar transistor -- PHPT60415PYX
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60415NY Features and benefits High thermal power dissipation capability High temperature applications up...
60 V, 3 A PNP high power bipolar transistor -- PHPT60603PY-QX
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60603NY-Q Features and benefits High thermal power dissipation capability Suitable for high temperature...
60 V, 3 A PNP high power bipolar transistor -- PHPT60603PYX
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60603NY. Features and benefits High thermal power dissipation capability Suitable for high temperature...
50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ -- PEMB10,115
PNP/PNP double Resistor-Equipped Transistor (RET) in a ultra small flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PEMD10 NPN/NPN complement: PEMH10 Features and benefits 100 mA output current...
50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PEMB2,115
PNP/PNP double Resistor-Equipped Transistor (RET) in a ultra small flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PEMD12 NPN/NPN complement: PEMH2 Features and benefits 100 mA output current...
50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ -- PEMB9,115
50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ -- PEMB9,315
50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ -- PEMB9/DG,115
PNP/PNP double Resistor-Equipped Transistor (RET) in a ultra small flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PEMD9 NPN/NPN complement: PEMH9 Features and benefits 100 mA output current...
PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ -- PEMB13,115
PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ -- PEMB13/A2,115
PNP/PNP double Resistor-Equipped Transistors (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies...
PNP/PNP general purpose double transistor -- PEMT1,115
PNP/PNP general purpose double transistor -- PEMT1,315
PNP/PNP double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PEMX1 Features and benefits 300 mW total power dissipation Very small 1.6...
50 V, 100 mA PNP/PNP resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 2.2 kOhm -- PEMB20,115
PNP/PNP Resistor-Equipped Transistor (RET) in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD)plastic package. NPN/NPN complement: PEMH20 NPN/PNP complement: PEMD20 Features and benefits Built-in bias resistors Simplifies circuit...
50 V, 20 mA PNP/PNP resistor-equipped transistor; R1 = 100 kOhm, R2 = 100 kOhm -- PEMB24,115
PNP/PNP Resistor-Equipped Transistor (RET) in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD)plastic package. NPN/NPN complement: PEMH24 NPN/PNP complement: PEMD24 Features and benefits Built-in bias resistors Simplifies circuit...
50 V, 100 mA PNP/PNP Resistor-Equipped Transistor; R1 = 4.7 kΩ, R2 = open -- PEMB3,115
PNP/PNP Resistor-Equipped Transistor (RET) in a ultra small flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PEMD6 NPN/NPN complement: PEMH7 Features and benefits Built-in bias resistors Simplifies circuit...
PNP/PNP resistor-equipped transistor; R1 = 10 kOhm, R2 = 10 kOhm -- PEMB11,115
PNP/PNP resistor-equipped transistor; R1 = 10 kOhm, R2 = 10 kOhm -- PEMB11/DG,115
PNP/PNP Resistor-Equipped Transistors (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PEMD3 NPN/NPN complement: PEMH11 Features and benefits 100 mA output current...
N-channel TrenchMOS standard level FET -- PHB27NQ10T,118
N-channel TrenchMOS standard level FET -- PHB29N08T,118
N-channel TrenchMOS standard level FET -- PHB45NQ10T,118
N-channel TrenchMOS standard level FET -- PHB47NQ10T,118
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications...
N-channel TrenchMOS ultra low level FET -- PH2520U,115
N-channel TrenchMOS ultra low level FET -- PH2520U,118
N-channel TrenchMOS ultra low level FET -- PH2925U,115
N-channel TrenchMOS ultra low level FET -- PH2925U,118
Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial...

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