Nexperia B.V. 100 V, N-channel Trench MOSFET PMV280ENEAR

Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range Tj = 175 °C Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2) AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits
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Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range Tj = 175 °C Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2) AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits
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Datasheet
Datasheet Summary
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100 V, N-channel Trench MOSFET in a SOT23 (TO-236AB) surface-mounted package with a drain-source on-state resistance of 285 to 385 mΩ at 10 V gate-source voltage and 25 °C junction temperature, capable of continuous drain current up to 1.1 A, and rated for junction temperatures up to 175 °C. The device features ESD protection exceeding 2 kV HBM and is AEC-Q101 qualified for automotive applications.

Datasheet Summary
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100 V, N-channel Trench MOSFET in a SOT23 (TO-236AB) surface-mounted package with a drain-source on-state resistance of 285 to 385 mΩ at 10 V gate-source voltage and 25 °C junction temperature, capable of continuous drain current up to 1.1 A, and rated for junction temperatures up to 175 °C. The device features ESD protection exceeding 2 kV HBM and is AEC-Q101 qualified for automotive applications.

Suppliers

Company
Product
Description
Supplier Links
100 V, N-channel Trench MOSFET - PMV280ENEAR - Nexperia B.V.
Nijmegen, Netherlands
100 V, N-channel Trench MOSFET
PMV280ENEAR
100 V, N-channel Trench MOSFET PMV280ENEAR
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range Tj = 175 °C Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2) AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Logic-level compatible
  • Extended temperature range Tj = 175 °C
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2)
  • AEC-Q101 qualified

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PMV280ENEARTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMV280ENEARTR-ND
Single FETs, MOSFETs 1727-PMV280ENEARTR-ND
N-Channel 100V 1.1A (Ta) 580mW (Ta) Surface Mount TO-236AB

N-Channel 100V 1.1A (Ta) 580mW (Ta) Surface Mount TO-236AB

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMV280ENEARDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMV280ENEARDKR-ND
Single FETs, MOSFETs 1727-PMV280ENEARDKR-ND
N-Channel 100V 1.1A (Ta) 580mW (Ta) Surface Mount TO-236AB

N-Channel 100V 1.1A (Ta) 580mW (Ta) Surface Mount TO-236AB

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMV280ENEARCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMV280ENEARCT-ND
Single FETs, MOSFETs 1727-PMV280ENEARCT-ND
N-Channel 100V 1.1A (Ta) 580mW (Ta) Surface Mount TO-236AB

N-Channel 100V 1.1A (Ta) 580mW (Ta) Surface Mount TO-236AB

Buy Now Datasheet
Singapore, Singapore
N-Channel 100 V MOSFET Transistor
278-PMV280ENEAR
N-Channel 100 V MOSFET Transistor 278-PMV280ENEAR
PMV280ENEA - 100 V, N-channel Trench MOSFET TO-236 3-Pin Product overview: PMV280ENEAR from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMV280ENEAR can be used for catalog matching and distributor lookup.

PMV280ENEA - 100 V, N-channel Trench MOSFET TO-236 3-Pin Product overview: PMV280ENEAR from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMV280ENEAR can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV280ENEAR - 930803-PMV280ENEAR - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV280ENEAR
930803-PMV280ENEAR
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV280ENEAR 930803-PMV280ENEAR
Manufacturer: Nexperia USA Inc. Win Source Part Number: 930803-PMV280ENEAR Series: TrenchMOS™ Operating Temperature Range: -55°C ~ 150°C (TJ) Features: N-Channel 100 V 1.1A (Ta) 580mW (Ta) Surface Mount TO-236AB Package: TO-236-3, SC-59, SOT-23-3 Package: Reel - TR Mounting: Surface Mount Family Name: PMV280 Categories: Discrete Semiconductor Products Case / Package: TO-236AB ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 74 pct. Supply and Demand Status: Balance Quantity per package: 3000 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 25 Weeks REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Other Part Number: PMV280ENEAR-ND, 1727-8341-1, 1727-8341-2, 1727-8341-6, 934070697215

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 930803-PMV280ENEAR
Series: TrenchMOS™
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 100 V 1.1A (Ta) 580mW (Ta) Surface Mount TO-236AB
Package: TO-236-3, SC-59, SOT-23-3
Package: Reel - TR
Mounting: Surface Mount
Family Name: PMV280
Categories: Discrete Semiconductor Products
Case / Package: TO-236AB
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 74 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 25 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Other Part Number: PMV280ENEAR-ND, 1727-8341-1, 1727-8341-2, 1727-8341-6, 934070697215

Buy Now Datasheet
Single FETs, MOSFETs - PMV280ENEAR - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PMV280ENEAR
Single FETs, MOSFETs PMV280ENEAR
MOSFET N-CH 100V 1.1A TO236AB

MOSFET N-CH 100V 1.1A TO236AB

Supplier's Site Datasheet
Mosfet, Aec-Q101, N-Ch, 100V, To-236Ab; Transistor Polarity Nexperia - 32AC8205 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Aec-Q101, N-Ch, 100V, To-236Ab; Transistor Polarity Nexperia
32AC8205
Mosfet, Aec-Q101, N-Ch, 100V, To-236Ab; Transistor Polarity Nexperia 32AC8205
MOSFET, AEC-Q101, N-CH, 100V, TO-236AB; Transistor Polarity:N Channel; Continuous Drain Current Id:1.1A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.285ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes

MOSFET, AEC-Q101, N-CH, 100V, TO-236AB; Transistor Polarity:N Channel; Continuous Drain Current Id:1.1A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.285ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET PMV280ENEA/SOT23 TO-236AB

MOSFET PMV280ENEA/SOT23 TO-236AB

Buy Now Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
PMV280ENEAR
Triode/MOS Tube/Transistor >> MOSFETs PMV280ENEAR
100V 1.1A 580mW 385mΩ@1.1A,10V 2.7V@250uA null SOT-23 MOSFETs ROHS

100V 1.1A 580mW 385mΩ@1.1A,10V 2.7V@250uA null SOT-23 MOSFETs ROHS

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMV280ENEAR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMV280ENEAR
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMV280ENEAR
MOSFET N-CH 100V 1.1A TO236AB

MOSFET N-CH 100V 1.1A TO236AB

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global) Newark, An Avnet Company VAST STOCK CO., LIMITED LCSC Electronics Technology (HK) Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number PMV280ENEAR 1727-PMV280ENEARTR-ND 278-PMV280ENEAR 930803-PMV280ENEAR PMV280ENEAR 32AC8205 PMV280ENEAR PMV280ENEAR PMV280ENEAR
Product Name 100 V, N-channel Trench MOSFET Single FETs, MOSFETs N-Channel 100 V MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV280ENEAR Single FETs, MOSFETs Mosfet, Aec-Q101, N-Ch, 100V, To-236Ab; Transistor Polarity Nexperia MOSFET Triode/MOS Tube/Transistor >> MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 100 volts 100 volts 100 volts
IDSS 1100 milliamps 1100 milliamps 1100 milliamps
VGS(off) 20 volts 2.7 volts
PD 700 milliwatts 580 milliwatts 580 milliwatts
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