Nexperia B.V. Mosfet, P-Ch, -20V, -0.5A, Sot-883-3; Transistor Polarity Nexperia PMZ950UPE

P-channel enhancement mode MOSFET designed for switching applications, housed in a leadless ultra-small DFN1006-3 (SOT883) package measuring 1.0 × 0.6 × 0.48 mm. It has a drain-source voltage rating of -20 V, a continuous drain current of -500 mA at 25 °C, and a drain-source on-state resistance of 1.02 Ω at -4.5 V gate-source voltage and -500 mA drain current. The gate-source threshold voltage ranges from -0.45 V to -0.95 V. The device offers ESD protection exceeding 1 kV HBM and operates from -55 °C to 150 °C junction temperature. Total power dissipation is 360 mW at 25 °C ambient with a standard footprint. The part meets IEC 60134 absolute maximum ratings.