Nexperia B.V. Datasheets for Transistors

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
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Product Name	Notes
BUK7Y59-60E BUK7Y9R9-80E/CX BUK9107-40ATC,118 BUK9107-55ATE,118 BUK9207-30B,118 BUK9209-40B,118 BUK9212-55B,118 BUK9213-60EJ BUK9214-30A,118 BUK9215-55A,118 BUK92150-55A,118 BUK92150-55A/CDJ BUK9216-100EJ BUK9217-75B,118 BUK9219-55A,118 BUK9222-100EJ BUK9222-55A,118 BUK9222-55A,127 BUK9223-60EJ BUK9225-55A,118 BUK9226-75A,118 BUK9230-100B,118 BUK9230-55A,118 BUK9230-80EJ BUK9237-55A,118 BUK9240-100A,118 BUK9245-55A,118 BUK9245-55A/C1,118 BUK9275-100A,118 BUK9277-55A,118 BUK9277-55A/CDJ BUK9504-40A,127 BUK9506-40B,127 BUK9506-75B,127 BUK9507-30B,127 BUK9508-55B,127 BUK9509-40B,127 BUK9510-100B,127 BUK9511-55A,127 BUK9512-55B,127 BUK9514-55A,127 BUK9515-100A,127 BUK9518-55A,127 BUK9520-100A,127 BUK9520-100B,127 BUK9529-100B,127 BUK952R8-30B,127 BUK9535-100A,127 BUK9535-55A,127 BUK953R2-40B,127 BUK953R5-60E,127 BUK9540-100A,127 BUK954R2-55B,127 BUK954R4-40B,127 BUK954R8-60E,127 BUK956R1-100E BUK9575-100A,127 BUK9575-55A,127 BUK9604-40A,118 BUK9605-30A BUK9605-30A,118 BUK9606-40B,118 BUK9606-55A,118 BUK9606-55B,118 BUK9606-75B,118 BUK9607-30B,118 BUK9608-55A,118 BUK9608-55B,118 BUK9609-40B,118 BUK9610-100B,118 BUK9611-80E,118 BUK9612-55B,118 BUK9614-55A,118 BUK9614-60E,118 BUK9615-100A,118 BUK9615-100E,118 BUK9616-75B,118 BUK96180-100A,118 BUK961R4-30E BUK961R6-40E,118 BUK9620-100B,118 BUK9620-55A,118 BUK9620-55A/C1118 BUK9624-55A,118 BUK9628-100A,118 BUK9628-55A,118 BUK9629-100B,118 BUK962R6-40E,118 BUK962R8-30B,118 BUK962R8-60E,118 BUK9635-55A BUK963R1-40E,118 BUK963R2-40B,118 BUK9640-100A/C1,118 BUK964R1-40E,118 BUK964R2-55B,118 BUK964R2-60E,118 BUK964R2-80E,118 BUK964R4-40B,118 BUK964R7-80E,118 BUK964R8-60E,118 BUK965R4-40E,118 BUK9660-100A BUK9660-100A,118 BUK969R3-100E,118 BUK98150-55/CU BUK98150-55/CUF BUK98150-55A,135 BUK98150-55A/CU,135 BUK9840-55,115 BUK9840-55/CUX BUK9875-100A/CU,115 BUK9880-55,135 BUK9880-55/CUF BUK9880-55A/CU,115 BUK9907-40ATC,127 BUK9C07-65BIT,118 BUK9C10-55BIT/A,11 BUK9C10-65BIT,118 BUK9E04-40A,127 BUK9E06-55A,127 BUK9E06-55B,127 BUK9E08-55B,127 BUK9GTHP-55PJTR,51 BUK9K12-60E/1X BUK9K12-80LX BUK9K17-60E,115 BUK9K17-60E/1X BUK9K18-40E BUK9K25-40E/1X BUK9K29-100E/1X BUK9K31-100LX BUK9K35-100LX BUK9K49-80LX BUK9K61-100LX BUK9K6R8-40E BUK9M16-100LX BUK9M35-80E BUK9M48-80LX BUK9M60-100LX BUK9M85-60E BUK9M9R5-40H BUK9MJJ-55PSS/A,51 BUK9MJT-55PRF,518 BUK9MPP-65PLL,518 BUK9MRR-65PKK,518 BUK9Y07-30B,115 BUK9Y11-30B,115 BUK9Y12-40E BUK9Y12-55B,115 BUK9Y12-80E,115 BUK9Y19-55B/C2,115 BUK9Y19-55B/DSX BUK9Y22-30B,115 BUK9Y30-75B/C2,115 BUK9Y30-75B/DSX BUK9Y40-55B/C3,115 BUK9Y53-100B,115. BUK9Y53-100B/C2,11 BUK9Y8R7-60E BXK9Q29-60AJ BXK9Q29-60EJ BZA862A BZA956A,115 BZX84-B3V6,215 GAN039-650NTBZ GAN063-650WSAQ MJD31C MJD31CA MJD32C MJD32CA MJD44H11 MJD44H11A MJD45H11 MJD45H11A MMBT2222A MMBT3904 MMBTA92 NGW30T60M3DFQ
650 V, 50 mOhm Gallium Nitride (GaN) FET in a TO-247-3 package -- GANC050-650WSHQ	650 V, 50 mOhm Gallium Nitride (GaN) FET in a TO-247-3 package
N-channel 40 V, 11.0 mOhm logic level MOSFET in LFPAK33 -- BUK9M11-40HX N-channel 40 V, 15.0 mOhm logic level MOSFET in LFPAK33 -- BUK9M15-40HX N-channel 40 V, 20.0 mOhm logic level MOSFET in LFPAK33 -- BUK9M20-40HX N-channel 40 V, 3.3 mOhm logic level MOSFET in LFPAK33 -- BUK9M3R3-40HX N-channel 40 V, 4.3 mOhm logic level MOSFET in LFPAK33 -- BUK9M4R3-40HX N-channel 40 V, 5.0 mOhm logic level MOSFET in LFPAK33 -- BUK9M5R0-40HX N-channel 40 V, 6.0 mOhm logic level MOSFET in LFPAK33 -- BUK9M6R0-40HX N-channel 40 V, 6.7 mOhm logic level MOSFET in LFPAK33 -- BUK9M6R7-40HX N-channel 40 V, 8.5 mOhm logic level MOSFET in LFPAK33 -- BUK9M8R5-40HX N-channel 40 V, 9.5 mOhm logic level MOSFET in LFPAK33 -- BUK9M9R5-40HX	Automotive qualified logic level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive...
N-channel 40 V, 1.3 mΩ logic level MOSFET in LFPAK56 -- BUK9Y1R3-40HX N-channel 40 V, 1.6 mΩ logic level MOSFET in LFPAK56 -- BUK9Y1R6-40HX N-channel 40 V, 1.9 mΩ logic level MOSFET in LFPAK56 -- BUK9Y1R9-40HX N-channel 40 V, 2.4 mΩ logic level MOSFET in LFPAK56 -- BUK9Y2R4-40HX N-channel 40 V, 2.8 mΩ logic level MOSFET in LFPAK56 -- BUK9Y2R8-40HX N-channel 40 V, 6.5 mΩ logic level MOSFET in LFPAK56 -- BUK9Y6R5-40HX N-channel 40 V, 7.0 mΩ standard level MOSFET in LFPAK56 -- BUK7Y7R0-40HX	Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101...
N-channel 40 V, 0.9 mΩ logic level MOSFET in LFPAK56E -- BUK9J0R9-40HX	Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in an enhanced LFPAK56E package. This product has been fully designed and qualified to meet AEC-Q101...
Dual N-channel 100 V, 159 mΩ logic level MOSFET -- BUK9K134-100EX Dual N-channel 100 V, 33 mΩ logic level MOSFET -- BUK9K32-100EX Dual N-channel 30 V, 5.3 mOhm logic level MOSFET -- BUK9K5R1-30EX Dual N-channel 30 V, 5.8 mOhm logic level MOSFET -- BUK9K5R6-30EX Dual N-channel 40 V, 29 mOhm logic level MOSFET -- BUK9K25-40EX Dual N-channel 40 V, 7.2 mOhm logic level MOSFET -- BUK9K6R8-40EX Dual N-channel 60 V, 11.5 mΩ logic level MOSFET -- BUK9K12-60EX Dual N-channel 60 V, 12.5 mOhm logic level MOSFET -- BUK9K13-60EX Dual N-channel 60 V, 17 mΩ logic level MOSFET -- BUK9K17-60EX Dual N-channel TrenchMOS logic level FET -- BUK9K29-100E,115 Dual N-channel TrenchMOS logic level FET -- BUK9K45-100E,115 Dual N-channel TrenchMOS logic level FET -- BUK9K6R2-40E,115 Dual N-channel TrenchMOS logic level FET -- BUK9K89-100E,115	Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance...
Dual N-channel 40 V, 19.5 mOhm logic level MOSFET -- BUK9K18-40E,115 Dual N-channel 40 V, 9.4 mOhm logic level MOSFET -- BUK9K8R7-40EX Dual N-channel 60 V, 35 mΩ logic level MOSFET -- BUK9K35-60E,115 Dual N-channel 60 V, 55 mΩ logic level MOSFET -- BUK9K52-60E,115 Dual N-channel 80 V, 20 mΩ logic level MOSFET -- BUK9K20-80EX Dual N-channel 80 V, 22 mΩ logic level MOSFET -- BUK9K22-80EX Dual N-channel 80 V, 30 mΩ logic level MOSFET -- BUK9K30-80EX	Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive...
Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) -- BUK9V13-40HX	Dual, logic level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101. An internal connection is made...
Dual N-channel 40 V, 29 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology -- BUK9K25-40RAX Dual N-channel 60 V, 12.5 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology -- BUK9K13-60RAX Dual N-channel 60 V, 35 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology -- BUK9K35-60RAX Dual N-channel 60 V, 55 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology -- BUK9K52-60RAX	Dual, logic level N-channel MOSFET in an LFPAK56D package, using Application Specific (ASFET) repetitive avalanche silicon technology. This product has been designed and qualified to AEC-Q101 for use in repetitive...
Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D -- BUK9K13-40HX	Dual, Logic level N-channel MOSFET in an LFPAK56D package, using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications...
650 V, 50 mOhm Gallium Nitride (GaN) FET in a TOLT package -- GANC050-650UTHZ	GANC050-650UTH is a 650 V, 50 mΩ gallium nitride (GaN) FET in a TOLT package. This normally-off device combines high-voltage GaN HEMT and low-voltage silicon MOSFET technologies to deliver robust,...
150 mA LED driver in SOT223 -- NCR420ZAX 150 mA LED driver in SOT223 -- NCR420ZX 150 mA LED driver in SOT223 -- NCR421ZX 250 mA LED driver in SOT223 -- NCR320ZX 250 mA LED driver in SOT223 -- NCR321ZX	LED driver consisting of a resistor-equipped NPN transistor with two diodes on one chip in a medium power SOT223 (SC-73) plastic package. Table 1.Product overview Type number - Package Nexperia...
250 mA LED driver in SOT457 -- NCR320UX 250 mA LED driver in SOT457 -- NCR321UX	LED driver consisting of a resistor-equipped NPN transistor with two diodes on one chip in an SOT457 (SC-74; TSOP6) plastic package. Table 1.Product overview Type number - Package Nexperia -...
10 mA LED driver in SOT23 -- NCR401TR	LED driver consisting of a resistor-equipped PNP transistor with two diodes on one chip in a small SOT23 plastic package. Features and benefits Stabilized output current of 10 mA High...
20 mA LED driver in SOT23 -- NCR402TR	LED driver consisting of a resistor-equipped PNP transistor with two diodes on one chip in a small SOT23 plastic package. Features and benefits Stabilized output current of 20 mA High...
50 mA LED driver in SOT457 -- NCR405UX	LED driver consisting of resistor‑equipped PNP transistor with two diodes on one chip in an SOT457 (SC-74) plastic package. Features and benefits Stabilized output current of 50 mA High current...
150 mA LED driver in DFN2020D-6 -- NCR420PASX 150 mA LED driver in DFN2020D-6 -- NCR421PASX 250 mA LED driver in DFN2020D-6 -- NCR320PASX 250 mA LED driver in DFN2020D-6 -- NCR321PASX	LED driver consisting of resistor-equipped NPN transistor with two diodes on one chip in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side...
150 mA LED driver in SOT457 -- NCR420UX 150 mA LED driver in SOT457 -- NCR421UX	LED driver consisting of resistor-equipped NPN transistor with two diodes on one chip in an SOT457 (SC-74; TSOP6) plastic package. Table 1.Product overview Type number - Package Nexperia - JEITA...
10 mA LED driver in SOT457 -- NCR401UX	LED driver consisting of resistor-equipped PNP transistor with two diodes on one chip in an SOT457 (SC-74) plastic package. Features and benefits Stabilized output current of 10 mA High current...
20 mA LED driver in SOT457 -- NCR402UH 20 mA LED driver in SOT457 -- NCR402UX	LED driver consisting of resistor-equipped PNP transistor with two diodes on one chip in an SOT457 (SC-74) plastic package. Features and benefits Stabilized output current of 20 mA High current...
N-channel TrenchMOS logic level FET -- BUK9Y14-40B,115	Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia's High Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate...
N-channel TrenchMOS logic level FET -- BUK9609-75A,118 N-channel TrenchMOS logic level FET -- BUK9635-55A,118 N-channel TrenchMOS logic level FET -- BUK9640-100A,118 N-channel TrenchMOS logic level FET -- BUK9675-100A,118 N-channel TrenchMOS logic level FET -- BUK9675-55A,118 N-channel TrenchMOS logic level FET -- BUK98150-55A/CUF N-channel TrenchMOS logic level FET -- BUK98180-100A/CUX N-channel TrenchMOS logic level FET -- BUK9832-55A/CUX N-channel TrenchMOS logic level FET -- BUK9875-100A/CUX N-channel TrenchMOS logic level FET -- BUK9880-55A/CUX N-channel TrenchMOS logic level FET -- BUK9Y09-40B,115 N-channel TrenchMOS logic level FET -- BUK9Y104-100B,115 N-channel TrenchMOS logic level FET -- BUK9Y19-55B,115 N-channel TrenchMOS logic level FET -- BUK9Y19-75B,115 N-channel TrenchMOS logic level FET -- BUK9Y27-40B,115 N-channel TrenchMOS logic level FET -- BUK9Y30-75B,115 N-channel TrenchMOS logic level FET -- BUK9Y40-55B,115 N-channel TrenchMOS logic level FET -- BUK9Y58-75B,115	Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in...
N-channel TrenchMOS logic level FET -- BUK9Y53-100B,115	Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using using Nexperia's High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate...
Logic level N-Channel MOSFET in MLPAK33-WF (SOT8002-3D) -- BUK9Q12-40HJ Logic level N-Channel MOSFET in MLPAK33-WF (SOT8002-3D) -- BUK9Q20-40HJ	Logic level N-Channel MOSFET in a compact MLPAK33-WF (SOT8002-3D) package using Trench 9 technology. This product has been designed and qualified to meet AEC-Q101 requirements delivering high performance and reliability.
100 V, 16 mOhm logic level N-channel MOSFET in MLPAK33 -- BUK9Q16-100LJ 100 V, 19 mOhm logic level N-channel MOSFET in MLPAK33 -- BUK9Q19-100LJ 100 V, 25 mOhm logic level N-channel MOSFET in MLPAK33 -- BUK9Q25-100LJ 100 V, 32 mOhm logic level N-channel MOSFET in MLPAK33 -- BUK9Q32-100LJ 100 V, 39 mOhm logic level N-channel MOSFET in MLPAK33 -- BUK9Q39-100LJ 100 V, 50 mOhm logic level N-channel MOSFET in MLPAK33 -- BUK9Q50-100LJ 80 V, 14 mOhm logic level N-channel MOSFET in MLPAK33 -- BUK9Q14-80LJ 80 V, 17 mOhm logic level N-channel MOSFET in MLPAK33 -- BUK9Q17-80LJ 80 V, 22 mOhm logic level N-channel MOSFET in MLPAK33 -- BUK9Q22-80LJ 80 V, 28 mOhm logic level N-channel MOSFET in MLPAK33 -- BUK9Q28-80LJ 80 V, 34 mOhm logic level N-channel MOSFET in MLPAK33 -- BUK9Q34-80LJ 80 V, 45 mOhm logic level N-channel MOSFET in MLPAK33 -- BUK9Q45-80LJ	Logic level N-channel MOSFET in a small MLPAK33‑WF package using Trench12 technology. This product has been designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. Features and...
Logic level N-Channel MOSFET in MLPAK33-WF (SOT8002-3D) -- BUK9Q4R6-40HJ Logic level N-Channel MOSFET in MLPAK33-WF (SOT8002-3D) -- BUK9Q7R0-40HJ	Logic level N-Channel MOSFET in a small MLPAK33-WF (SOT8002-3D) package using Trench 9 technology. This product has been designed and qualified to meet AEC-Q101 requirements delivering high performance and reliability.
Logic level N-Channel MOSFET in MLPAK56-WF (SOT8038-2) -- BUK9R4R5-40HJ	Logic level N-Channel MOSFET in a small MLPAK56-WF (SOT8038-2) package, using Trench 9 technology. This product has been designed and qualified to meet AEC-Q101 requirements delivering high performance and reliability.
N-channel TrenchMOS logic level FET -- BUK962R5-60E,118 N-channel TrenchMOS logic level FET -- BUK9637-100E,118 N-channel TrenchMOS logic level FET -- BUK963R3-60E,118 N-channel TrenchMOS logic level FET -- BUK965R8-100E,118 N-channel TrenchMOS logic level FET -- BUK966R5-60E,118 N-channel TrenchMOS logic level FET -- BUK969R0-60E,118	Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. Features and...
N-channel 100 V, 120 mΩ logic level MOSFET in LFPAK33 -- BUK9M120-100EX N-channel 100 V, 156 mΩ logic level MOSFET in LFPAK33 -- BUK9M156-100EX N-channel 100 V, 34 mΩ logic level MOSFET in LFPAK33 -- BUK9M34-100EX N-channel 100 V, 43 mΩ logic level MOSFET in LFPAK33 -- BUK9M43-100EX N-channel 30 V, 10 mΩ logic level MOSFET in LFPAK33 -- BUK9M10-30EX N-channel 30 V, 17 mΩ logic level MOSFET in LFPAK33 -- BUK9M17-30EX N-channel 30 V, 5.2 mΩ logic level MOSFET in LFPAK33 -- BUK9M5R2-30EX N-channel 30 V, 6.6 mΩ logic level MOSFET in LFPAK33 -- BUK9M6R6-30EX N-channel 40 V, 11 mΩ logic level MOSFET in LFPAK33 -- BUK9M11-40EX N-channel 40 V, 14 mΩ logic level MOSFET in LFPAK33 -- BUK9M14-40EX N-channel 40 V, 24 mΩ logic level MOSFET in LFPAK33 -- BUK9M24-40EX N-channel 40 V, 52 mΩ logic level MOSFET in LFPAK33 -- BUK9M52-40EX N-channel 40 V, 7.2 mΩ logic level MOSFET in LFPAK33 -- BUK9M7R2-40EX N-channel 40 V, 9.1 mΩ logic level MOSFET in LFPAK33 -- BUK9M9R1-40EX N-channel 60 V, 12 mΩ logic level MOSFET in LFPAK33 -- BUK9M12-60EX N-channel 60 V, 15 mΩ logic level MOSFET in LFPAK33 -- BUK9M15-60EX N-channel 60 V, 19 mΩ logic level MOSFET in LFPAK33 -- BUK9M19-60EX N-channel 60 V, 24 mΩ logic level MOSFET in LFPAK33 -- BUK9M24-60EX N-channel 60 V, 42 mΩ logic level MOSFET in LFPAK33 -- BUK9M42-60EX N-channel 60 V, 53 mΩ logic level MOSFET in LFPAK33 -- BUK9M53-60EX N-channel 60 V, 85 mΩ logic level MOSFET in LFPAK33 -- BUK9M85-60EX N-channel 80 V, 23 mΩ logic level MOSFET in LFPAK33 -- BUK9M23-80EX N-channel 80 V, 28 mΩ logic level MOSFET in LFPAK33 -- BUK9M28-80EX N-channel 80 V, 35 mΩ logic level MOSFET in LFPAK33 -- BUK9M35-80EX	Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
N-channel 80 V, 13 mOhm logic level MOSFET in LFPAK33 -- BUK9M13-80LX N-channel 80 V, 24 mOhm logic level MOSFET in LFPAK33 -- BUK9M24-80LX	Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. Features...
N-channel 60 V, 4.8 mOhm logic level MOSFET in LFPAK56 using Repetitive Avalanche technology -- BUK9Y4R8-60RAX	Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using Application Specific (ASFET) repetitive avalanche silicon technology. This product has been designed and qualified to AEC-Q101 for use in...
N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56 -- BUK9Y113-100E,115 N-channel 100 V, 12 mΩ logic level MOSFET in LFPAK56 -- BUK9Y12-100E,115 N-channel 100 V, 15 mΩ logic level MOSFET in LFPAK56 -- BUK9Y15-100E,115 N-channel 100 V, 153 mΩ logic level MOSFET in LFPAK56 -- BUK9Y153-100E,115 N-channel 100 V, 19 mΩ logic level MOSFET in LFPAK56 -- BUK9Y19-100E,115 N-channel 100 V, 22 mΩ logic level MOSFET in LFPAK56 -- BUK9Y22-100E,115 N-channel 100 V, 38 mΩ logic level MOSFET in LFPAK56 -- BUK9Y38-100E,115 N-channel 100 V, 65 mΩ logic level MOSFET in LFPAK56 -- BUK9Y65-100E,115 N-channel 40 V, 21 mΩ logic level MOSFET in LFPAK56 -- BUK9Y21-40E,115 N-channel 40 V, 29 mΩ logic level MOSFET in LFPAK56 -- BUK9Y29-40E,115 N-channel 40 V, 4.4 mΩ logic level MOSFET in LFPAK56 -- BUK9Y4R4-40E,115 N-channel 60 V, 15 mΩ logic level MOSFET in LFPAK56 -- BUK9Y15-60E,115 N-channel 60 V, 25 mΩ logic level MOSFET in LFPAK56 -- BUK9Y25-60E,115 N-channel 60 V, 4.8 mΩ logic level MOSFET in LFPAK56 -- BUK9Y4R8-60E,115 N-channel 60 V, 43 mΩ logic level MOSFET in LFPAK56 -- BUK9Y43-60E,115 N-channel 60 V, 59 mΩ logic level MOSFET in LFPAK56 -- BUK9Y59-60E,115 N-channel 60 V, 7.2 mΩ logic level MOSFET in LFPAK56 -- BUK9Y7R2-60E,115 N-channel 60 V, 8.7 mΩ logic level MOSFET in LFPAK56 -- BUK9Y8R7-60E,115 N-channel 80 V, 107 mΩ logic level MOSFET in LFPAK56 -- BUK9Y107-80EX N-channel 80 V, 11 mΩ logic level MOSFET in LFPAK56 -- BUK9Y11-80EX N-channel 80 V, 27 mΩ logic level MOSFET in LFPAK56 -- BUK9Y25-80E,115 N-channel 80 V, 45 mΩ logic level MOSFET in LFPAK56 -- BUK9Y41-80E,115 N-channel 80 V, 78 mΩ logic level MOSFET in LFPAK56 -- BUK9Y72-80E,115 N-channel 80 V, 8.5 mΩ logic level MOSFET in LFPAK56 -- BUK9Y8R5-80EX N-channel 80 V,15 mΩ logic level MOSFET in LFPAK56 -- BUK9Y14-80E,115	Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive...
N-channel 40 V, 12 mΩ logic level MOSFET in LFPAK56 -- BUK9Y12-40E,115 N-channel 40 V, 3.8 mOhm logic level MOSFET in LFPAK56 -- BUK9Y3R5-40E,115 N-channel 40 V, 7.6 mΩ logic level MOSFET in LFPAK56 -- BUK9Y7R6-40E,115 N-channel 60 V, 6.0 mOhm logic level MOSFET in LFPAK56 -- BUK9Y6R0-60E,115	Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.
N-channel 40 V 3.0 mΩ logic level MOSFET in LFPAK56 -- BUK9Y3R0-40E,115	Logic level N-channel MOSFET in LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. Features...
40 V, N-channel Trench MOSFET -- BUK9D23-40EX	N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Extended temperature range Tj =...
60 V, N-channel Trench MOSFET -- BUK9Q29-60EJ	N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT8002-3 (MLPAK33) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET...
NEVB-AVC_LVC_AXPUL	NEVB-AVC_LVC_AXPUL
NEVB-NID1100UL	NEVB-NID1100UL
NEVB-NID1101UL	NEVB-NID1101UL
NEVB-NID5100UL	NEVB-NID5100UL
NEVB-NPS1000UL	NEVB-NPS1000UL
NEVB-NPS1001UL	NEVB-NPS1001UL
NEVB-NPS210XUL	NEVB-NPS210XUL
NEVB-NPS3005BUL	NEVB-NPS3005BUL
NEVB-NPS3102AUL	NEVB-NPS3102AUL
NEVB-NPS3102BUL	NEVB-NPS3102BUL
NEVB-NPS4053AUL	NEVB-NPS4053AUL
NEVB-NPS4053UL	NEVB-NPS4053UL
NEVB-NPS7601UL	NEVB-NPS7601UL
NGW40T65H3DFQQ NGW40T65H3DHQQ NGW50T65H3DFQQ NGW75T65H3DFQQ	Nexperia product taxonomy // IGBT discretes
650 V, 15 A trench field-stop IGBT with full rated silicon diode -- NGB15T65M3DFPJ	NGB15T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third⁠-⁠generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. NGB15T65M3DFP is rated to 175 °C with optimized IGBT turn-off...
650 V, 15 A trench field-stop IGBT with full rated silicon diode -- NGFP15T65M3DFPQ	NGFP15T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third⁠-⁠generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. NGFP15T65M3DFP is rated to 175 °C with optimized IGBT turn-off...
100 V, 3 A NPN high power bipolar transistor -- MJD31CH-QJ 45 V, 4 A NPN high power bipolar transistor -- MJD148-QJ 45 V, 4 A NPN high power bipolar transistor -- MJD148J 50 V, 2 A NPN high power bipolar transistor -- MJD2873-QJ 50 V, 2 A NPN high power bipolar transistor -- MJD2873J	NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. Features and benefits High thermal power dissipation capability High energy efficiency due to less...
100 V, 3 A NPN high power bipolar transistor -- MJD31CJ	NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD32C Features and benefits High thermal power dissipation capability High energy efficiency...
100 V, 3 A NPN high power bipolar transistor -- MJD31CAJ	NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD32CA Features and benefits High thermal power dissipation capability High energy efficiency...
100 V, 6 A NPN high power bipolar transistor -- MJD41C-QJ	NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD42C-Q Features and benefits High thermal power dissipation capability High energy efficiency...
100 V, 6 A NPN high power bipolar transistor -- MJD41CJ	NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD42C Features and benefits High thermal power dissipation capability High energy efficiency...
80 V, 8 A NPN high power bipolar transistor -- MJD44H11J	NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11 Features and benefits High thermal power dissipation capability High energy efficiency...
80 V, 8 A NPN high power bipolar transistor -- MJD44H11AJ	NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11A Features and benefits High thermal power dissipation capability High energy efficiency...
100 V, 3 A NPN high power bipolar transistor -- MJPE31CH-QZ 100 V, 3 A NPN high power bipolar transistor -- MJPE31CHZ 50 V, 2 A NPN high power bipolar transistor -- MJPE2873-QZ 50 V, 2 A NPN high power bipolar transistor -- MJPE2873Z	NPN high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits High thermal power dissipation capability High energy efficiency due to...
100 V, 3 A NPN high power bipolar transistor -- MJPE31C-QZ	NPN high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: MJPE32C-Q Features and benefits High thermal power dissipation capability High energy...
100 V, 3 A NPN high power bipolar transistor -- MJPE31CZ	NPN high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: MJPE32C Features and benefits High thermal power dissipation capability High energy...
80 V, 8 A NPN high power bipolar transistor -- MJPE44H11-QZ	NPN high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: MJPE45H11-Q Features and benefits High thermal power dissipation capability High energy...
80 V, 8 A NPN high power bipolar transistor -- MJPE44H11Z	NPN high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: MJPE45H11 Features and benefits High thermal power dissipation capability High energy...
NPN high-voltage transistor -- MMBTA42-QR	NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) High voltage (max. 300 V) Qualified according to AEC-Q101 and...
NPN high-voltage transistor -- MMBTA42,215	NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: MMBTA92 Features and benefits Low current (max. 100 mA) High voltage (max. 300 V) Applications Telephony...
40 V, 200 mA NPN switching transistor -- MMBT3904-QR 40 V, 200 mA NPN switching transistor -- MMBT3904-QVL	NPN switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: MMBT3906-Q Features and benefits Collector current capability IC = 200 mA Collector-emitter voltage VCEO...
40 V, 200 mA NPN switching transistor -- MMBT3904,215 40 V, 200 mA NPN switching transistor -- MMBT3904VL	NPN switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: MMBT3906 Features and benefits Collector current capability IC = 200 mA Collector-emitter voltage VCEO...
NPN switching transistor -- MMBT2222A-QR	NPN switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PMBT2907A-Q Features and benefits High current (max. 600 mA) Low voltage (max. 40 V) Qualified according...
NPN switching transistor -- MMBT2222A,215	NPN switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PMBT2907A Features and benefits High current (max. 600 mA) Low voltage (max. 40 V) AEC-Q101 qualified...
60 V, P-channel Trench MOSFET -- BUK9D120-60PX	P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range...
100 V, 3 A PNP high power bipolar transistor -- MJD32CJ	PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31C Features and benefits High thermal power dissipation capability High energy efficiency...
100 V, 3 A PNP high power bipolar transistor -- MJD32CAJ	PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31CA Features and benefits High thermal power dissipation capability High energy efficiency...
100 V, 6 A PNP high power bipolar transistor -- MJD42C-QJ	PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD41C-Q Features and benefits High thermal power dissipation capability High energy efficiency...
100 V, 6 A PNP high power bipolar transistor -- MJD42CJ	PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD41C Features and benefits High thermal power dissipation capability High energy efficiency...
80 V, 8 A PNP high power bipolar transistor -- MJD45H11J	PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD44H11 Features and benefits High thermal power dissipation capability High energy efficiency...
80 V, 8 A PNP high power bipolar transistor -- MJD45H11AJ	PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD44H11A Features and benefits High thermal power dissipation capability High energy efficiency...
100 V, 3 A PNP high power bipolar transistor -- MJPE32C-QZ	PNP high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: MJPE31C-Q Features and benefits High thermal power dissipation capability High energy...
100 V, 3 A PNP high power bipolar transistor -- MJPE32CZ	PNP high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: MJPE31C Features and benefits High thermal power dissipation capability High energy...
80 V, 8 A PNP high power bipolar transistor -- MJPE45H11-QZ	PNP high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: MJPE44H11-Q Features and benefits High thermal power dissipation capability High energy...
80 V, 8 A PNP high power bipolar transistor -- MJPE45H11Z	PNP high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: MJPE44H11 Features and benefits High thermal power dissipation capability High energy...
PNP high-voltage transistor -- MMBTA92-QR	PNP high-voltage transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. NPN complement: MMBTA42-Q Features and benefits Low current (max. 100 mA) High voltage (max. 300 V) Qualified according...
PNP high-voltage transistor -- MMBTA92,215	PNP high-voltage transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. NPN complement: MMBTA42 Features and benefits Low current (max. 100 mA) High voltage (max. 300 V) AEC-Q101 qualified...
40 V, 200 mA PNP switching transistor -- MMBT3906-QR	PNP switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: MMBT3904-Q Features and benefits Collector current capability IC = -200 mA Collector-emitter voltage VCEO...
40 V, 200 mA PNP switching transistor -- MMBT3906,215 40 V, 200 mA PNP switching transistor -- MMBT3906VL	PNP switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: MMBT3904 Features and benefits Collector current capability IC = -200 mA Collector-emitter voltage VCEO...
Single N-channel 60 V, 13 mOhm logic level MOSFET in LFPAK33 using Enhanced SOA technology -- BUK9M20-60ELX Single N-channel 60 V, 21 mOhm logic level MOSFET in LFPAK33 using Enhanced SOA technology -- BUK9M31-60ELX Single N-channel 60 V, 44 mOhm logic level MOSFET in LFPAK33 using Enhanced SOA technology -- BUK9M67-60ELX	Single, logic level, N-channel MOSFET in LFPAK33 using Application specific (ASFET) Enhanced SOA technology. This product has been designed and qualified to AEC-Q101 for use in linear mode in airbag...
Single N-channel 60 V, 15 mOhm logic level MOSFET in LFPAK56 using Enhanced SOA technology -- BUK9Y22-60ELX Single N-channel 60 V, 4.5 mOhm logic level MOSFET in LFPAK56 using Enhanced SOA technology -- BUK9Y7R0-60ELX Single N-channel 60 V, 5.6 mOhm logic level MOSFET in LFPAK56 using Enhanced SOA technology -- BUK9Y8R8-60ELX Single N-channel 60 V, 7.9 mOhm logic level MOSFET in LFPAK56 using Enhanced SOA technology -- BUK9Y13-60ELX	Single, logic level, N-channel MOSFET in LFPAK56 using Application specific (ASFET) Enhanced SOA technology. This product has been designed and qualified to AEC-Q101 for use in linear mode in airbag...
N-channel TrenchMOS standard level FET -- BUK7Y53-100B,115	Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia's High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC...
N-channel 100 V, 65 mΩ standard level MOSFET in LFPAK56 -- BUK7Y65-100EX N-channel 40 V, 4.4 mΩ standard level MOSFET in LFPAK56 -- BUK7Y4R4-40EX N-channel 60 V, 4.8 mΩ standard level MOSFET in LFPAK56 -- BUK7Y4R8-60EX N-channel 60 V, 43 mΩ standard level MOSFET in LFPAK56 -- BUK7Y43-60EX N-channel 60 V, 59 mΩ standard level MOSFET in LFPAK56 -- BUK7Y59-60EX N-channel 60 V, 6.0 mΩ standard level MOSFET in LFPAK56 -- BUK7Y6R0-60EX N-channel 60 V, 7.2 mΩ standard level MOSFET in LFPAK56 -- BUK7Y7R2-60EX N-channel 60 V, 8.7 mΩ standard level MOSFET in LFPAK56 -- BUK7Y8R7-60EX N-channel 80 V, 7.8 mΩ standard level MOSFET in LFPAK56 -- BUK7Y7R8-80EX N-channel 80 V, 72 mΩ standard level MOSFET in LFPAK56 -- BUK7Y72-80EX N-channel 80 V, 9.9 mΩ standard level MOSFET in LFPAK56 -- BUK7Y9R9-80EX N-channel 80 V, 98 mΩ standard level MOSFET in LFPAK56 -- BUK7Y98-80EX	Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive...
N-channel 40 V, 7.6 mΩ standard level MOSFET in LFPAK56 -- BUK7Y7R6-40EX	Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.
650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package -- GAN039-650NBBHP	The GAN039-650NBB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology...
650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package -- GAN039-650NTBJ	The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2...
650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package -- GAN041-650WSBQ	The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology...
650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package -- GAN080-650EBEZ	The GAN080-650EBE is a general purpose 650 V, 80 mΩ Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm surface mount package. It is a normally-off e-mode...
650 V, 97 mOhm Gallium Nitride (GaN) FET in a TO-247 package -- GAN111-650WSBQ	The GAN111-650WSB is a 650 V, 97 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology...
650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package -- GAN140-650EBEZ	The GAN140-650EBE is a general purpose 650 V, 140 mΩ Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm surface mount package. It is a normally-off e-mode...
650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package -- GAN190-650EBEZ	The GAN140-650EBE is a general purpose 650 V, 190 mΩ Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm surface mount package. It is a normally-off e-mode...
650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package -- GAN140-650FBEZ	The GAN140-650FBE is a general purpose 650 V, 140 mΩ Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm surface mount package. It is a normally-off e-mode...
650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package -- GAN190-650FBEZ	The GAN190-650FBE is a general purpose 650 V, 190 mΩ Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm surface mount package. It is a normally-off e-mode...
100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale Package (WLCSP) -- GAN3R2-100CBEAZ	The GAN3R2-100CBE is a a general purpose 100 V, 3.2 mΩ Gallium Nitride (GaN) FET in a 15 bump Wafer Level Chip-Scale Package (WLCSP). It is a normally-off e-mode device...
150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package -- GAN7R0-150LBEZ	The GAN7R0-150LBE is a general purpose 150 V, 7 mΩ Gallium Nitride (GaN) FET in a Land Grid Array (LGA) package. It is a normally-off e-mode device offering superior performance.
40 V, 12 mOhm bi-directional Gallium Nitride (GaN) FET in a 1.2 mm x 1.7 mm Wafer Level Chip-Scale Package (WLCSP) -- GANB012-040CBAZ	The GANB012-040CBA is a 40 V, 12 mΩ bi-directional Gallium Nitride (GaN) High Electron-Mobility-Tr ansistor (HEMT) in a Wafer Level Chip-Scale (WLCSP) package. It is a normally-off e-mode device offering...
40 V, 1.2 mOhm bi-directional Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN) -- GANB1R2-040QBAZ	The GANB1R2-040QBA is a 40 V, 1.2 mΩ bi-directional Gallium Nitride (GaN) High Electron-Mobility-Tr ansistor (HEMT) in a Very-Thin-Profile Quad Flat No-Lead Package (VQFN) package. It is a normally-off e-mode...
40 V, 4.8 mOhm bi-directional Gallium Nitride (GaN) FET in a 2.1 mm x 2.1 mm Wafer Level Chip-Scale Package (WLCSP) -- GANB4R8-040CBAZ	The GANB4R8-040CBA is a 40 V, 4.8 mΩ bi-directional Gallium Nitride (GaN) High Electron-Mobility-Tr ansistor (HEMT) in a Wafer Level Chip-Scale (WLCSP) package. It is a normally-off e-mode device offering...
40 V, 8.0 mOhm bi-directional Gallium Nitride (GaN) FET in a 1.7 mm x 1.7 mm Wafer Level Chip-Scale Package (WLCSP) -- GANB8R0-040CBAZ	The GANB8R0-040CBA is a 40 V, 8.0 mΩ bi-directional Gallium Nitride (GaN) High Electron-Mobility-Tr ansistor (HEMT) in a Wafer Level Chip-Scale (WLCSP) package. It is a normally-off e-mode device offering...
650 V, 35 mΩ Gallium Nitride (GaN) FET in a TOLL package -- GANC035-650TBHZ	The GANC035-650TBH is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TOLL package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT technology and...
650 V, 35 mΩ Gallium Nitride (GaN) FET in a TOLT package -- GANC035-650UTHZ	The GANC035-650UTH is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TOLT package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT technology and...
650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247-4 package -- GANC035-650VSHQ	The GANC035-650VSH is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247-4 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT technology and...
650 V, 50 mOhm Gallium Nitride (GaN) FET in a TOLL package -- GANC050-650TBHZ	The GANC050-650TBH is a 650 V, 50 mΩ gallium nitride (GaN) FET in a TOLL package. This normally-off device combines high-voltage GaN HEMT and low-voltage silicon MOSFET technologies to deliver...
650 V, 50 mOhm Gallium Nitride (GaN) FET in a TO-247-4 package -- GANC050-650VSHQ	The GANC050-650VSH is a 650 V, 50 mΩ gallium nitride (GaN) FET in a TO-247-4 package. This normally-off device combines high-voltage GaN HEMT and low-voltage silicon MOSFET technologies to deliver...
650 V, 70 mOhm Gallium Nitride (GaN) FET in a TOLL package -- GANC070-650TBHZ	The GANC070-650TBH is a 650 V, 70 mΩ Gallium Nitride (GaN) FET in a TOLL package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT technology and...
650 V, 70 mOhm Gallium Nitride (GaN) FET in a TOLT package -- GANC070-650UTHZ	The GANC070-650UTH is a 650 V, 70 mΩ Gallium Nitride (GaN) FET in a TOLT package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT technology and...
650 V, 70 mOhm Gallium Nitride (GaN) FET in a TO-247 package -- GANC070-650WSHQ	The GANC070-650WSH is a 650 V, 70 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT technology and...
AEC-Q101 qualified 80 V, 11 mOhm Gallium Nitride (GaN) FET in a 1.5 mm x 1.5 mm Wafer Level Chip-Scale Package (WLCSP) -- GANE011-080CBAZ	The GANE011-080CBA is a a general purpose 80 V, 11 mΩ Gallium Nitride (GaN) FET in a Wafer Level Chip-Scale Package (WLCSP). It is a normally-off e-mode device offering superior...
700 V, 140 mOhm Gallium Nitride (GaN) FET in DPAK package -- GANE140-700BBAZ	The GANE140-700DBA is a general purpose 700 V, 140 mΩ Gallium Nitride (GaN) FET in a DPAK package. It is a normally-off e-mode device offering superior performance. Features and benefits...
700 V, 190 mOhm Gallium Nitride (GaN) FET in DPAK package -- GANE190-700BBAZ	The GANE190-700BBA is a general purpose 700 V, 190 mΩ Gallium Nitride (GaN) FET in a DPAK package. It is a normally-off e-mode device offering superior performance. Features and benefits...
100 V, 1.8 mOhm Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN) -- GANE1R8-100QBAZ	The GANE1R8-100QBA is a a general purpose 100 V, 1.8 mΩ Gallium Nitride (GaN) FET in a Very-Thin-Profile Quad Flat No-Lead Package (VQFN) package. It is a normally-off e-mode device...
700 V, 240 mOhm Gallium Nitride (GaN) FET in DPAK package -- GANE240-700BBAZ	The GANE240-700BBA is a general purpose 700 V, 240 mΩ Gallium Nitride (GaN) FET in a DPAK package. It is a normally-off e-mode device offering superior performance. Features and benefits...
100 V, 2.7 mOhm Gallium Nitride (GaN) FET in a 4.45 mm x 2.30 mm Wafer Level Chip-Scale Package (WLCSP) -- GANE2R7-100CBAZ	The GANE2R7-100CBA is a a general purpose 100 V, 2.7 mΩ Gallium Nitride (GaN) FET in a Wafer Level Chip-Scale Package (WLCSP). It is a normally-off e-mode device offering superior...
650 V, 350 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package -- GANE350-650FBAZ	The GANE350-650FBA is a general purpose 650 V, 350 mΩ Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm surface mount package. It is a normally-off e-mode...
700 V, 350 mOhm Gallium Nitride (GaN) FET in DPAK package -- GANE350-700BBAZ	The GANE350-700BBA is a general purpose 700 V, 350 mΩ Gallium Nitride (GaN) FET in a DPAK package. It is a normally-off e-mode device offering superior performance. Features and benefits...
150 V, 3.9 mOhm Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN) -- GANE3R9-150QBAZ	The GANE3R9-150QBA is a a general purpose 150 V, 3.9 mΩ Gallium Nitride (GaN) FET in a Very-Thin-Profile Quad Flat No-Lead Package (VQFN) package. It is a normally-off e-mode device...
100 V, 7.0 mOhm Gallium Nitride (GaN) FET in a 2.5 mm x 1.5 mm Wafer Level Chip-Scale Package (WLCSP) -- GANE7R0-100CBAZ	The GANE7R0-100CBA is a a general purpose 100 V, 7.0 mΩ Gallium Nitride (GaN) FET in a Wafer Level Chip-Scale Package (WLCSP). It is a normally-off e-mode device offering superior...
650 V, 30 A trench field-stop IGBT with full rated silicon diode -- NGB30T65M3DFPJ	The NGB30T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third⁠-⁠generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGB30T65M3DFP is rated to 175 °C with optimized...
650 V, 30 A trench field-stop IGBT with full rated silicon diode -- NGW30T65M3DFP/A00Q 650 V, 30 A trench field-stop IGBT with full rated silicon diode -- NGW30T65M3DFP/A00Z 650 V, 30 A trench field-stop IGBT with full rated silicon diode -- NGW30T65M3DFPQ	The NGW30T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW30T65M3DFP is rated to 175 °C with optimized...
650 V, 30 A trench field-stop IGBT with full rated silicon diode -- NGW30T65M3DFQ/A00Q 650 V, 30 A trench field-stop IGBT with full rated silicon diode -- NGW30T65M3DFQQ	The NGW30T65M3DFQis a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW30T65M3DFQis rated to 175 °C with optimized IGBT turn-off...
650 V, 40 A trench field-stop IGBT with full rated silicon diode -- NGW40T65H3DFP/A00Q 650 V, 40 A trench field-stop IGBT with full rated silicon diode -- NGW40T65H3DFP/A00Z 650 V, 40 A trench field-stop IGBT with full rated silicon diode -- NGW40T65H3DFPQ	The NGW40T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third⁠⁠-⁠⁠generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65H3DFP is rated to 175 °C with optimized...
650 V, 40 A trench field-stop IGBT with half rated silicon diode -- NGW40T65H3DHP/A00Q 650 V, 40 A trench field-stop IGBT with half rated silicon diode -- NGW40T65H3DHP/A00Z 650 V, 40 A trench field-stop IGBT with half rated silicon diode -- NGW40T65H3DHPQ	The NGW40T65H3DHP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third⁠⁠-⁠⁠generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65H3DHP is rated to 175 °C with optimized...
650 V, 40 A trench field-stop IGBT with full rated silicon diode -- NGW40T65M3DFP/A00Q 650 V, 40 A trench field-stop IGBT with full rated silicon diode -- NGW40T65M3DFP/A00Z 650 V, 40 A trench field-stop IGBT with full rated silicon diode -- NGW40T65M3DFPQ	The NGW40T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third⁠⁠-⁠⁠generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65M3DFP is rated to 175 °C with optimized...
650 V, 40 A trench field-stop IGBT with full rated silicon diode -- NGW40T65M3DFQ/A00Q 650 V, 40 A trench field-stop IGBT with full rated silicon diode -- NGW40T65M3DFQQ	The NGW40T65M3DFQ is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third⁠⁠-⁠⁠generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65M3DFQ is rated to 175 °C with optimized...
650 V, 50 A trench field-stop IGBT with full rated silicon diode -- NGW50T65H3DFP/A00Q 650 V, 50 A trench field-stop IGBT with full rated silicon diode -- NGW50T65H3DFP/A00Z 650 V, 50 A trench field-stop IGBT with full rated silicon diode -- NGW50T65H3DFPQ	The NGW50T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW50T65H3DFP is rated to 175 °C with optimized...
650 V, 50 A trench field-stop IGBT with full rated silicon diode -- NGW50T65M3DFP/A00Q 650 V, 50 A trench field-stop IGBT with full rated silicon diode -- NGW50T65M3DFP/A00Z 650 V, 50 A trench field-stop IGBT with full rated silicon diode -- NGW50T65M3DFPQ	The NGW50T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third⁠-⁠generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW50T65M3DFP is rated to 175 °C with optimized...
650 V, 50 A trench field-stop IGBT with full rated silicon diode -- NGW50T65M3DFQ/A00Q 650 V, 50 A trench field-stop IGBT with full rated silicon diode -- NGW50T65M3DFQQ	The NGW50T65M3DFQis a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third⁠-⁠generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW50T65M3DFQis rated to 175 °C with optimized IGBT turn-off...
650 V, 60 A trench field-stop IGBT with full rated silicon diode -- NGW60T65M3DFP/A00Q 650 V, 60 A trench field-stop IGBT with full rated silicon diode -- NGW60T65M3DFP/A00Z 650 V, 60 A trench field-stop IGBT with full rated silicon diode -- NGW60T65M3DFPQ	The NGW60T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third⁠⁠-⁠⁠generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW60T65M3DFP is rated to 175 °C with optimized...
650 V, 60 A trench field-stop IGBT with full rated silicon diode -- NGW60T65M3DFQ/A00Q 650 V, 60 A trench field-stop IGBT with full rated silicon diode -- NGW60T65M3DFQQ	The NGW60T65M3DFQ is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third⁠⁠-⁠⁠generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW60T65M3DFQ is rated to 175 °C with optimized...
IGBT with trench construction, fast recovery diode -- NGW75T65H3DFQ	The NGW75T65H3DF is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third⁠-⁠generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DF is rated to 175 °C with optimized...
650 V, 75 A trench field-stop IGBT with full rated silicon diode -- NGW75T65H3DFP/A00Q 650 V, 75 A trench field-stop IGBT with full rated silicon diode -- NGW75T65H3DFP/A00Z 650 V, 75 A trench field-stop IGBT with full rated silicon diode -- NGW75T65H3DFPQ	The NGW75T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third⁠⁠-⁠⁠generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DFP is rated to 175 °C with optimized...
650 V, 75 A trench field-stop IGBT with full rated silicon diode -- NGW75T65M3DFP/A00Q 650 V, 75 A trench field-stop IGBT with full rated silicon diode -- NGW75T65M3DFP/A00Z 650 V, 75 A trench field-stop IGBT with full rated silicon diode -- NGW75T65M3DFPQ	The NGW75T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third⁠⁠-⁠⁠generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65M3DFP is rated to 175 °C with optimized...
650 V, 75 A trench field-stop IGBT with full rated silicon diode -- NGW75T65M3DFQ/A00Q	The NGW75T65M3DFQ is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third⁠⁠-⁠⁠generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65M3DFQ is rated to 175 °C with optimized...

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