N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 850684-PMV25ENEAR
Series: Automotive, AEC-Q101
Features: 30 V
Package: Reel - TR
Family Name: PMV25
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 82 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 25 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 568-12967-2-ND, 568-62967-6, 568-12967-1, PMV25ENEAR-ND, 568-12967-1-ND, 1727-2528-1, 568-62967-6-ND, 1727-2528-2, 568-12967-6-ND, 934068716215, 1727-2528-6
30 V, N-channel Trench MOSFET TO-236 3-Pin Product overview: PMV25ENEAR from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMV25ENEAR can be used for catalog matching and distributor lookup.
MOSFET N-CH 30V 5.5A TO236AB
N-Channel 30V 5.5A (Ta) 460mW (Ta), 6.94W (Tc) Surface Mount TO-236AB
N-Channel 30V 5.5A (Ta) 460mW (Ta), 6.94W (Tc) Surface Mount TO-236AB
N-Channel 30V 5.5A (Ta) 460mW (Ta), 6.94W (Tc) Surface Mount TO-236AB
MOSFET PMV25ENEA/TO-236AB/R
MOSFET N-CH 30V 5.5A TO236AB
MOSFET, N- CH, 30V, 5.5A, TO-236AB; Transistor Polarity:N Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power RoHS Compliant: Yes
| Nexperia B.V. | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMV25ENEAR | 850684-PMV25ENEAR | 278-PMV25ENEAR | PMV25ENEAR | 1727-PMV25ENEARCT-ND | PMV25ENEAR | PMV25ENEAR | 99Y2083 |
| Product Name | 30 V, N-channel Trench MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV25ENEAR | N-Channel 30 V MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, NCh, 30V, 5.5A, To-236Ab; Transistor Polarity Nexperia |
| MOSFET Operating Mode | Enhancement | |||||||
| Package Type | SOT23; SOT23 | SOT3 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3 | ||
| Polarity | N-Channel; N-Channel | N-Channel | ||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 30 volts |
