Nexperia B.V. 50 V, 100 mA NPN/NPN Resistor-Equipped double Transistors (RET) PRMH10Z

Description
NPN/NPN Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PRMD10. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs Low package height of 0.5 mm AEC-Q101 qualified Applications Digital applications Cost-saving alternative to BC847/BC857 series in digital applications Control of IC inputs Switching loads
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Description
NPN/NPN Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PRMD10. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs Low package height of 0.5 mm AEC-Q101 qualified Applications Digital applications Cost-saving alternative to BC847/BC857 series in digital applications Control of IC inputs Switching loads
Request a Quote
Datasheet
Datasheet Summary
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50 V, 100 mA NPN/NPN Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless SMD plastic package measuring 1.4 mm × 1.2 mm × 0.47 mm, with built-in bias resistors and a maximum height of 0.5 mm. Each transistor offers a collector-emitter voltage rating of 50 V and an output current capability of 100 mA, with a DC current gain of at least 100 at 5 V and 10 mA. The device is AEC-Q101 qualified for automotive applications.

Datasheet Summary
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50 V, 100 mA NPN/NPN Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless SMD plastic package measuring 1.4 mm × 1.2 mm × 0.47 mm, with built-in bias resistors and a maximum height of 0.5 mm. Each transistor offers a collector-emitter voltage rating of 50 V and an output current capability of 100 mA, with a DC current gain of at least 100 at 5 V and 10 mA. The device is AEC-Q101 qualified for automotive applications.

Suppliers

Company
Product
Description
Supplier Links
50 V, 100 mA NPN/NPN Resistor-Equipped double Transistors (RET) - PRMH10Z - Nexperia B.V.
Nijmegen, Netherlands
50 V, 100 mA NPN/NPN Resistor-Equipped double Transistors (RET)
PRMH10Z
50 V, 100 mA NPN/NPN Resistor-Equipped double Transistors (RET) PRMH10Z
NPN/NPN Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PRMD10. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs Low package height of 0.5 mm AEC-Q101 qualified Applications Digital applications Cost-saving alternative to BC847/BC857 series in digital applications Control of IC inputs Switching loads

NPN/NPN Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package.

NPN/PNP complement: PRMD10.

Features and benefits

  • 100 mA output current capability
  • Built-in bias resistors
  • Simplifies circuit design
  • Reduces component count
  • Reduces pick and place costs
  • Low package height of 0.5 mm
  • AEC-Q101 qualified

Applications

  • Digital applications
  • Cost-saving alternative to BC847/BC857 series in digital applications
  • Control of IC inputs
  • Switching loads
Supplier's Site Datasheet
 - PRMH10Z - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor

Small Signal Bipolar Transistor

Supplier's Site Datasheet
Bipolar Transistor Arrays, Pre-Biased - 1727-7395-1-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
1727-7395-1-ND
Bipolar Transistor Arrays, Pre-Biased 1727-7395-1-ND
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 230MHz 480mW Surface Mount DFN1412-6

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 230MHz 480mW Surface Mount DFN1412-6

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - 1727-7395-2-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
1727-7395-2-ND
Bipolar Transistor Arrays, Pre-Biased 1727-7395-2-ND
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 230MHz 480mW Surface Mount DFN1412-6

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 230MHz 480mW Surface Mount DFN1412-6

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - 1727-7395-6-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
1727-7395-6-ND
Bipolar Transistor Arrays, Pre-Biased 1727-7395-6-ND
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 230MHz 480mW Surface Mount DFN1412-6

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 230MHz 480mW Surface Mount DFN1412-6

Buy Now Datasheet
Trans, Aec-Q101, Dual Npn, 50V, Dfn1412; Digital Transistor Polarity Nexperia - 37AC0889 - Newark, An Avnet Company
Chicago, IL, United States
Trans, Aec-Q101, Dual Npn, 50V, Dfn1412; Digital Transistor Polarity Nexperia
37AC0889
Trans, Aec-Q101, Dual Npn, 50V, Dfn1412; Digital Transistor Polarity Nexperia 37AC0889
TRANS, AEC-Q101, DUAL NPN, 50V, DFN1412; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:47kohm; Resistor RoHS Compliant: Yes

TRANS, AEC-Q101, DUAL NPN, 50V, DFN1412; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:47kohm; Resistor RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PRMH10Z - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PRMH10Z
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PRMH10Z
TRANS PREBIAS 2NPN 50V DFN1412-6

TRANS PREBIAS 2NPN 50V DFN1412-6

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
PRMH10Z
Bipolar Transistors - BJT PRMH10Z
Bipolar Transistors - BJT PRMH10/SOT1268 DFN1412-6

Bipolar Transistors - BJT PRMH10/SOT1268 DFN1412-6

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. Rochester Electronics DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number PRMH10Z PRMH10Z 1727-7395-1-ND 37AC0889 PRMH10Z PRMH10Z
Product Name 50 V, 100 mA NPN/NPN Resistor-Equipped double Transistors (RET) Bipolar Transistor Arrays, Pre-Biased Trans, Aec-Q101, Dual Npn, 50V, Dfn1412; Digital Transistor Polarity Nexperia Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Package Type SOT1268 SOT1268 SOT1268 6-XFDFN Exposed Pad TO-3 AEC-Q101
Packing Method Tape Reel; Tape & Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
Polarity NPN NPN
Transistor Grade / Operating Range Automotive
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