P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
PMV65XPE - 20 V, P-channel Trench MOSFET TO-236 3-Pin Product overview: PMV65XPER from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 20 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMV65XPER can be used for catalog matching and distributor lookup.
MOSFET P-CH 20V 2.8A TO236AB
P-Channel 20V 2.8A (Ta) 480mW (Ta), 6.25W (Tc) Surface Mount TO-236AB
P-Channel 20V 2.8A (Ta) 480mW (Ta), 6.25W (Tc) Surface Mount TO-236AB
P-Channel 20V 2.8A (Ta) 480mW (Ta), 6.25W (Tc) Surface Mount TO-236AB
Win Source Part Number: 992832-PMV65XPER
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 480mW (Ta), 6.25W (Tc)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 618 pF @ 10 V
Vgs (Max): ±12V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 76 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Nexperia USA Inc.
Other Names: 1727-2311-6,1727-231
Base Product Number: PMV65
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
MOSFET, P-CH, 20V, 2.8A, TO-236AB ROHS COMPLIANT: YES
MOSFET P-CH 20V 2.8A TO236AB
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | PMV65XPER | 278-PMV65XPER | PMV65XPER | 1727-2311-1-ND | 992832-PMV65XPER | 74AH1170 | PMV65XPER |
| Product Name | 20 V, P-channel Trench MOSFET | P-Channel 20 V MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet, P-Ch, 20V, 2.8A, To-236Ab Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | -20 volts | 20 volts | |||||
| IDSS | -3300 milliamps | 2800 milliamps | |||||
| VGS(off) | -1 volts |
