P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
P-Channel 30V 410mA (Ta) 310mW (Ta), 1.67W (Tc) Surface Mount SOT-883
P-Channel 30V 410mA (Ta) 310mW (Ta), 1.67W (Tc) Surface Mount SOT-883
P-Channel 30V 410mA (Ta) 310mW (Ta), 1.67W (Tc) Surface Mount SOT-883
Win Source Part Number: 1085730-PMZ1200UPEYL
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 10,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 410mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 410mA, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Package / Case: SC-101, SOT-883
Supplier Device Package: SOT-883
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43.2 pF @ 15 V
Vgs (Max): ±8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): DMP31D0U-7; DMN32D2LDF-7; DMP32D4SFB-7B; FDV304P; SI1028X-T1-GE3; FDG6303N934069329315
ECCN: EAR99
Fake Threat In the Open Market: 55 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Nexperia USA Inc.
Other Names: 1727-2315-2,568-1260
Base Product Number: PMZ1200
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
MOSFET 30V Dual N-Channel Trench MOSFET
MOSFET P-CH 30V 410MA DFN1006-3
MOSFET P-CH 30V 410MA DFN1006-3
MOSFET Transistor, P Channel, -410 mA, -30 V, 1.2 ohm, -4.5 V, -700 mV RoHS Compliant: Yes
| Nexperia B.V. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMZ1200UPEYL | 1727-2315-1-ND | 1085730-PMZ1200UPEYL | PMZ1200UPEYL | PMZ1200UPEYL | PMZ1200UPEYL | 68Y7861 |
| Product Name | 30 V, P-channel Trench MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, P Channel, -410 Ma, -30 V, 1.2 Ohm, -4.5 V, -700 Mv Rohs Compliant Nexperia |
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | -30 volts | 30 volts | |||||
| IDSS | -410000 milliamps | 410 milliamps | |||||
| VGS(off) | 8 volts | ||||||
| PD | 310 milliwatts | 310 to 1670 milliwatts | 310 milliwatts |
