Nexperia B.V. PNP/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm PQMB11Z

Description
PNP/PNP Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PQMH11 NPN/PNP complement: PQMD3 Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs Low package height of 0.37 mm AEC-Q101 qualified Applications Low current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications Mobile applications
Request a Quote Datasheet
Description
PNP/PNP Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PQMH11 NPN/PNP complement: PQMD3 Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs Low package height of 0.37 mm AEC-Q101 qualified Applications Low current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications Mobile applications
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
PNP/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm - PQMB11Z - Nexperia B.V.
Nijmegen, Netherlands
PNP/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm
PQMB11Z
PNP/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm PQMB11Z
PNP/PNP Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PQMH11 NPN/PNP complement: PQMD3 Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs Low package height of 0.37 mm AEC-Q101 qualified Applications Low current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications Mobile applications

PNP/PNP Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package.

NPN/NPN complement: PQMH11

NPN/PNP complement: PQMD3

Features and benefits

  • 100 mA output current capability
  • Built-in bias resistors
  • Simplifies circuit design
  • Reduces component count
  • Reduces pick and place costs
  • Low package height of 0.37 mm
  • AEC-Q101 qualified

Applications

  • Low current peripheral driver
  • Control of IC inputs
  • Replaces general-purpose transistors in digital applications
  • Mobile applications
Supplier's Site Datasheet
Bipolar Transistor Arrays, Pre-Biased - 1727-2708-6-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
1727-2708-6-ND
Bipolar Transistor Arrays, Pre-Biased 1727-2708-6-ND
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 180MHz 230mW Surface Mount DFN1010B-6

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 180MHz 230mW Surface Mount DFN1010B-6

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - 1727-2708-1-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
1727-2708-1-ND
Bipolar Transistor Arrays, Pre-Biased 1727-2708-1-ND
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 180MHz 230mW Surface Mount DFN1010B-6

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 180MHz 230mW Surface Mount DFN1010B-6

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - 1727-2708-2-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
1727-2708-2-ND
Bipolar Transistor Arrays, Pre-Biased 1727-2708-2-ND
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 180MHz 230mW Surface Mount DFN1010B-6

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 180MHz 230mW Surface Mount DFN1010B-6

Buy Now Datasheet
 - PQMB11Z - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon

Supplier's Site Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
PQMB11Z
Bipolar Transistors - Pre-Biased PQMB11Z
Bipolar Transistors - Pre-Biased PQMB11/DFN1010B-6/RE EL 7" Q2/T

Bipolar Transistors - Pre-Biased PQMB11/DFN1010B-6/REEL 7" Q2/T

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PQMB11Z - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PQMB11Z
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PQMB11Z
TRANS PREBIAS 2PNP DFN1010B-6

TRANS PREBIAS 2PNP DFN1010B-6

Supplier's Site
Rf Transistor Rohs Compliant Nexperia - 29AK4009 - Newark, An Avnet Company
Chicago, IL, United States
Rf Transistor Rohs Compliant Nexperia
29AK4009
Rf Transistor Rohs Compliant Nexperia 29AK4009
RF TRANSISTOR ROHS COMPLIANT: YES

RF TRANSISTOR ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey Rochester Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors RF Transistors
Product Number PQMB11Z 1727-2708-6-ND PQMB11Z PQMB11Z PQMB11Z 29AK4009
Product Name PNP/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm Bipolar Transistor Arrays, Pre-Biased Bipolar Transistors - Pre-Biased Discrete Semiconductor Products - Transistors - Bipolar (BJT) Rf Transistor Rohs Compliant Nexperia
Polarity PNP PNP PNP
Package Type SOT1216 6-XFDFN Exposed Pad SOT1216 AEC-Q101 TO-3
Transistor Grade / Operating Range Automotive
Packing Method Tape Reel; Tape & Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
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