N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
PMV37EN2 - 30 V, N-channel Trench MOSFET TO-236 3-Pin Product overview: PMV37EN2R from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMV37EN2R can be used for catalog matching and distributor lookup.
MOSFET N-CH 30V 4.5A TO236AB
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089791-PMV37EN2R
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 510mW (Ta), 5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4.5A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 6.3nC @ 10V
Max Input Capacitance: 209pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 36 mOhm @ 4.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Sufficient
N-Channel 30V 4.5A (Ta) 510mW (Ta), 5W (Tc) Surface Mount TO-236AB
N-Channel 30V 4.5A (Ta) 510mW (Ta), 5W (Tc) Surface Mount TO-236AB
N-Channel 30V 4.5A (Ta) 510mW (Ta), 5W (Tc) Surface Mount TO-236AB
MOSFET N-CH 30V 4.5A TO236AB
MOSFET, N-CH, 30V, 4.5A, TO-236AB ROHS COMPLIANT: YES
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMV37EN2R | 278-PMV37EN2R | PMV37EN2R | 1089791-PMV37EN2R | 1727-2306-6-ND | PMV37EN2R | 74AH1168 |
| Product Name | 30 V, N-channel Trench MOSFET | N-Channel 30 V MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV37EN2R | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 30V, 4.5A, To-236Ab Rohs Compliant Nexperia |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||
| IDSS | 5600 milliamps | 4500 milliamps | |||||
| VGS(off) | 1.5 volts |
