N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 surface-mounted plastic package measuring 2.9 mm x 1.3 mm x 1 mm, using Trench MOSFET technology. It has a drain-source voltage rating of 30 V, a continuous drain current of 6.2 A at 25 °C with proper PCB mounting, and a drain-source on-state resistance of 15 to 20 mΩ at 10 V gate-source voltage. The junction temperature range extends to 175 °C, and it offers ESD protection exceeding 2 kV HBM (class H2). Logic-level compatible, it is suited for relay drivers, high-speed line drivers, low-side load switches, and switching circuits.
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
N-Channel 30V 6.2A (Ta) 700mW (Ta), 8.3W (Tc) Surface Mount TO-236AB
N-Channel 30V 6.2A (Ta) 700mW (Ta), 8.3W (Tc) Surface Mount TO-236AB
N-Channel 30V 6.2A (Ta) 700mW (Ta), 8.3W (Tc) Surface Mount TO-236AB
PMV15ENE/SOT23/TO-23
PMV15ENE/SOT23/TO-23
MOSFET, N-CH, 30V, 6.2A, SOT-23 ROHS COMPLIANT: YES
| Nexperia B.V. | DigiKey | ODG (Origin Data Global) | Acme Chip Technology Co., Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMV15ENER | 1727-PMV15ENERCT-ND | PMV15ENER | PMV15ENER | 26AK2757 |
| Product Name | 30 V, N-channel Trench MOSFET | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 30V, 6.2A, Sot-23 Rohs Compliant Nexperia |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 30 volts | 30 volts | |||
| IDSS | 6200 milliamps | 6200 milliamps | |||
| VGS(off) | 20 volts | ||||
| PD | 700 milliwatts | 700 milliwatts |
