Nexperia B.V. Mosfet, P-Ch, -20V, -3.3A, Sot-23-3; Transistor Polarity Nexperia PMV65XPE

P-channel Trench MOSFET for switching circuits, relay driver, and high-side loadswitch applications in a SOT23 (TO-236AB) surface-mounted package measuring 2.8 mm by 1.9 mm. It has a drain-source voltage rating of -20 V, a continuous drain current of -2.8 A at 25 °C ambient, and a peak drain current of -12 A for 10 µs pulses. The drain-source on-state resistance is 67 mΩ at -4.5 V gate-source voltage and 25 °C junction temperature. Total power dissipation is 480 mW at 25 °C ambient on a standard footprint, and 890 mW with a 6 cm² drain pad. It has a gate-source threshold voltage of -1 V typ, a total gate charge of 5 nC, and 2 kV HBM ESD protection. Junction temperature range is -55 °C to 150 °C.