N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
N-Channel 30V 5.1A (Ta) 3.3W (Ta) Surface Mount DFN2020MD-6
N-Channel 30V 5.1A (Ta) 3.3W (Ta) Surface Mount DFN2020MD-6
N-Channel 30V 5.1A (Ta) 3.3W (Ta) Surface Mount DFN2020MD-6
MOSFET DFN2020MD-6
MOSFET PMPB100ENE/SOT1220/S
| Nexperia B.V. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMPB100ENEX | 1727-7660-1-ND | PMPB100ENEX | PMPB100ENEX |
| Product Name | 30 V, N-channel MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | ||
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | 30 volts | |||
| IDSS | 5100 milliamps | |||
| VGS(off) | 1.5 volts |