Nexperia B.V. 20 V, P-channel Trench MOSFET PMXB350UPEZ

Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection 1 kV HBM Drain-source on-state resistance RDSon = 350 mΩ Applications High-side load switch and charging switch for portable devices Power management in battery driven portables LED driver DC-to-DC converter
  • 20 V, P-channel Trench MOSFET - PMXB350UPEZ - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-PMXB350UPEZCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMXB350UPEZDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMXB350UPEZTR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMXB350UPEZ - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet Transistor, P Channel, -1.2 A, -20 V, 0.35 Ohm, -4.5 V, -700 Mv Rohs Compliant Nexperia - 68Y7846 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection 1 kV HBM Drain-source on-state resistance RDSon = 350 mΩ Applications High-side load switch and charging switch for portable devices Power management in battery driven portables LED driver DC-to-DC converter
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
20 V, P-channel Trench MOSFET - PMXB350UPEZ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
20 V, P-channel Trench MOSFET
PMXB350UPEZ
20 V, P-channel Trench MOSFET PMXB350UPEZ
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection 1 kV HBM Drain-source on-state resistance RDSon = 350 mΩ Applications High-side load switch and charging switch for portable devices Power management in battery driven portables LED driver DC-to-DC converter

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Trench MOSFET technology
  • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
  • Exposed drain pad for excellent thermal conduction
  • ElectroStatic Discharge (ESD) protection 1 kV HBM
  • Drain-source on-state resistance RDSon = 350 mΩ

Applications

  • High-side load switch and charging switch for portable devices
  • Power management in battery driven portables
  • LED driver
  • DC-to-DC converter
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PMXB350UPEZCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMXB350UPEZCT-ND
Single FETs, MOSFETs 1727-PMXB350UPEZCT-ND
P-Channel 20V 1.2A (Ta) 360mW (Ta), 5.68W (Tc) Surface Mount DFN1010D-3

P-Channel 20V 1.2A (Ta) 360mW (Ta), 5.68W (Tc) Surface Mount DFN1010D-3

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMXB350UPEZDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMXB350UPEZDKR-ND
Single FETs, MOSFETs 1727-PMXB350UPEZDKR-ND
P-Channel 20V 1.2A (Ta) 360mW (Ta), 5.68W (Tc) Surface Mount DFN1010D-3

P-Channel 20V 1.2A (Ta) 360mW (Ta), 5.68W (Tc) Surface Mount DFN1010D-3

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMXB350UPEZTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMXB350UPEZTR-ND
Single FETs, MOSFETs 1727-PMXB350UPEZTR-ND
P-Channel 20V 1.2A (Ta) 360mW (Ta), 5.68W (Tc) Surface Mount DFN1010D-3

P-Channel 20V 1.2A (Ta) 360mW (Ta), 5.68W (Tc) Surface Mount DFN1010D-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMXB350UPEZ - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMXB350UPEZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMXB350UPEZ
MOSFET P-CH 20V 1.2A DFN1010D-3

MOSFET P-CH 20V 1.2A DFN1010D-3

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
PMXB350UPEZ
MOSFET PMXB350UPEZ
MOSFET 20 V, P-channel Trench MOSFET

MOSFET 20 V, P-channel Trench MOSFET

Buy Now Datasheet
Mosfet Transistor, P Channel, -1.2 A, -20 V, 0.35 Ohm, -4.5 V, -700 Mv Rohs Compliant Nexperia - 68Y7846 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, P Channel, -1.2 A, -20 V, 0.35 Ohm, -4.5 V, -700 Mv Rohs Compliant Nexperia
68Y7846
Mosfet Transistor, P Channel, -1.2 A, -20 V, 0.35 Ohm, -4.5 V, -700 Mv Rohs Compliant Nexperia 68Y7846
MOSFET Transistor, P Channel, -1.2 A, -20 V, 0.35 ohm, -4.5 V, -700 mV RoHS Compliant: Yes

MOSFET Transistor, P Channel, -1.2 A, -20 V, 0.35 ohm, -4.5 V, -700 mV RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number PMXB350UPEZ 1727-PMXB350UPEZCT-ND PMXB350UPEZ PMXB350UPEZ 68Y7846
Product Name 20 V, P-channel Trench MOSFET Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet Transistor, P Channel, -1.2 A, -20 V, 0.35 Ohm, -4.5 V, -700 Mv Rohs Compliant Nexperia
Polarity P-Channel P-Channel P-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS -20 volts
IDSS -1200 milliamps
VGS(off) -0.7000 volts
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