Nexperia B.V. 20 V, single P-channel Trench MOSFET PMPB33XP,115

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

• Trench MOSFET technology
• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
• Exposed drain pad for excellent thermal conduction
• Tin-plated 100 % solderable side pads for optical solder inspection

Applications

• Charging switch for portable devices
• DC-to-DC converters
• Power management in battery-driven portable devices
• Hard disk and computing power management

P-Channel 20V 5.5A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6

P-Channel 20V 5.5A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6

P-Channel 20V 5.5A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089737-PMPB33XP,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-DFN2020MD (2x2)
Dimension: 6-UDFN Exposed Pad
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 5.5A (Ta)
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 23nC @ 4.5V
Max Input Capacitance: 1575pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 37 mOhm @ 5.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient