Nexperia B.V. 30 V, N-channel Trench MOSFET PMPB29XNEAX

Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks for optical solder inspection ElectroStatic Discharge (ESD) protection > 500 V HBM (class H1B) AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits
  • 30 V, N-channel Trench MOSFET - PMPB29XNEAX - Nexperia B.V.
    Nexperia B.V.
  • PMPB29XNEAX - Rochester Electronics
    Rochester Electronics
  • Single FETs, MOSFETs - 1727-PMPB29XNEAXTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMPB29XNEAXDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMPB29XNEAXCT-ND - DigiKey
    DigiKey
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Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks for optical solder inspection ElectroStatic Discharge (ESD) protection > 500 V HBM (class H1B) AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits
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Datasheet
Datasheet Summary
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N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. It has a drain-source voltage rating of 30 V, a continuous drain current of 5 A at 25 °C with a gate-source voltage of 4.5 V, and a drain-source on-state resistance of 28 to 33 mΩ. The device features ESD protection exceeding 500 V HBM (class H1B) and is AEC-Q101 qualified for automotive applications.

Datasheet Summary
Powered by GS/AI

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. It has a drain-source voltage rating of 30 V, a continuous drain current of 5 A at 25 °C with a gate-source voltage of 4.5 V, and a drain-source on-state resistance of 28 to 33 mΩ. The device features ESD protection exceeding 500 V HBM (class H1B) and is AEC-Q101 qualified for automotive applications.

Suppliers

Company
Product
Description
Supplier Links
30 V, N-channel Trench MOSFET - PMPB29XNEAX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
30 V, N-channel Trench MOSFET
PMPB29XNEAX
30 V, N-channel Trench MOSFET PMPB29XNEAX
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks for optical solder inspection ElectroStatic Discharge (ESD) protection > 500 V HBM (class H1B) AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Low threshold voltage
  • Trench MOSFET technology
  • Side wettable flanks for optical solder inspection
  • ElectroStatic Discharge (ESD) protection > 500 V HBM (class H1B)
  • AEC-Q101 qualified

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet
- PMPB29XNEAX - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
PMPB29XNEAX
PMPB29XNEAX
PMPB29XNEA - N-Channel MOSFET

PMPB29XNEA - N-Channel MOSFET

Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PMPB29XNEAXTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMPB29XNEAXTR-ND
Single FETs, MOSFETs 1727-PMPB29XNEAXTR-ND
5A (Tj)

5A (Tj)

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMPB29XNEAXDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMPB29XNEAXDKR-ND
Single FETs, MOSFETs 1727-PMPB29XNEAXDKR-ND
PMPB29XNEA/SOT1220/S OT1220

PMPB29XNEA/SOT1220/SOT1220

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMPB29XNEAXCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMPB29XNEAXCT-ND
Single FETs, MOSFETs 1727-PMPB29XNEAXCT-ND
PMPB29XNEA/SOT1220/S OT1220

PMPB29XNEA/SOT1220/SOT1220

Buy Now Datasheet
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMPB29XNEAX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMPB29XNEAX
PMPB29XNEA/SOT1220/S OT1220

PMPB29XNEA/SOT1220/SOT1220

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
PMPB29XNEAX
MOSFET PMPB29XNEAX
MOSFET PMPB29XNEA/SOT1220/S OT1220

MOSFET PMPB29XNEA/SOT1220/SOT1220

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. Rochester Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number PMPB29XNEAX PMPB29XNEAX 1727-PMPB29XNEAXTR-ND PMPB29XNEAX PMPB29XNEAX
Product Name 30 V, N-channel Trench MOSFET Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
MOSFET Operating Mode Enhancement
V(BR)DSS 30 volts
IDSS 5000 milliamps
VGS(off) 8 volts
PD 1.7 milliwatts
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