Nexperia B.V. Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) PSMN013-40VLDX

Description
Dual, logic level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using NextpowerS3 technology. An internal connection is made between the source (S1) of the high-side FET to the drain (D2) of the low-side FET, making the device ideal to use as a half-bridge switch in high-performance PWM and space constrained motor drive applications Features and benefits LFPAK56D package with half-bridge configuration enables: Reduced PCB layout complexity Module shrinkage through reduced component count Improved system level Rth(j-amb) due to optimized package design Lower parasitic inductance to support higher efficiency Footprint compatibility with LFPAK56D Dual package Applications Handheld power tools, portable appliance and space constrained applications Brushless or brushed DC motor drive DC-to-DC systems LED lighting
Request a Quote Datasheet
Description
Dual, logic level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using NextpowerS3 technology. An internal connection is made between the source (S1) of the high-side FET to the drain (D2) of the low-side FET, making the device ideal to use as a half-bridge switch in high-performance PWM and space constrained motor drive applications Features and benefits LFPAK56D package with half-bridge configuration enables: Reduced PCB layout complexity Module shrinkage through reduced component count Improved system level Rth(j-amb) due to optimized package design Lower parasitic inductance to support higher efficiency Footprint compatibility with LFPAK56D Dual package Applications Handheld power tools, portable appliance and space constrained applications Brushless or brushed DC motor drive DC-to-DC systems LED lighting
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) - PSMN013-40VLDX - Nexperia B.V.
Nijmegen, Netherlands
Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration)
PSMN013-40VLDX
Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) PSMN013-40VLDX
Dual, logic level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using NextpowerS3 technology. An internal connection is made between the source (S1) of the high-side FET to the drain (D2) of the low-side FET, making the device ideal to use as a half-bridge switch in high-performance PWM and space constrained motor drive applications Features and benefits LFPAK56D package with half-bridge configuration enables: Reduced PCB layout complexity Module shrinkage through reduced component count Improved system level Rth(j-amb) due to optimized package design Lower parasitic inductance to support higher efficiency Footprint compatibility with LFPAK56D Dual package Applications Handheld power tools, portable appliance and space constrained applications Brushless or brushed DC motor drive DC-to-DC systems LED lighting

Dual, logic level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using NextpowerS3 technology.

An internal connection is made between the source (S1) of the high-side FET to the drain (D2) of the low-side FET, making the device ideal to use as a half-bridge switch in high-performance PWM and space constrained motor drive applications

Features and benefits

  • LFPAK56D package with half-bridge configuration enables:
    • Reduced PCB layout complexity
    • Module shrinkage through reduced component count
    • Improved system level Rth(j-amb) due to optimized package design
    • Lower parasitic inductance to support higher efficiency
    • Footprint compatibility with LFPAK56D Dual package

Applications

  • Handheld power tools, portable appliance and space constrained applications
  • Brushless or brushed DC motor drive
  • DC-to-DC systems
  • LED lighting
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays - 1383213-PSMN013-40VLDX - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
1383213-PSMN013-40VLDX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays 1383213-PSMN013-40VLDX
Win Source Part Number: 1383213-PSMN013-40VL DX Category: Discrete Semiconductor Products>Transistors >FETs, MOSFETs>FET, MOSFET Arrays Package: Tape & Reel Standard Package: 1,500 pcs Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 42A (Ta) Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Power - Max: 46W (Ta) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 43 pct. REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Nexperia USA Inc. Base Product Number: PSMN013 Moisture Sensitivity Level (MSL): 3 (168 Hours)

Win Source Part Number: 1383213-PSMN013-40VLDX
Category: Discrete Semiconductor Products>Transistors>FETs, MOSFETs>FET, MOSFET Arrays
Package: Tape & Reel
Standard Package: 1,500 pcs
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power - Max: 46W (Ta)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D
Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 43 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Nexperia USA Inc.
Base Product Number: PSMN013
Moisture Sensitivity Level (MSL): 3 (168 Hours)

Buy Now Datasheet
MOSFETs - 2434871 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2434871
MOSFETs 2434871
Dual N-channel 40 V, 13 mOhm MOSFET

Dual N-channel 40 V, 13 mOhm MOSFET

Supplier's Site
MOSFETs - 2434870 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2434870
MOSFETs 2434870
Dual N-channel 40 V, 13 mOhm MOSFET

Dual N-channel 40 V, 13 mOhm MOSFET

Supplier's Site
MOSFETs - 2434871P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2434871P
MOSFETs 2434871P
Dual N-channel 40 V, 13 mOhm MOSFET

Dual N-channel 40 V, 13 mOhm MOSFET

Supplier's Site
FET, MOSFET Arrays - 1727-PSMN013-40VLDXDKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-PSMN013-40VLDXDKR-ND
FET, MOSFET Arrays 1727-PSMN013-40VLDXDKR-ND
Mosfet Array 2 N-Channel (Half Bridge) 40V 42A (Ta) 46W (Ta) Surface Mount LFPAK56D

Mosfet Array 2 N-Channel (Half Bridge) 40V 42A (Ta) 46W (Ta) Surface Mount LFPAK56D

Buy Now Datasheet
FET, MOSFET Arrays - 1727-PSMN013-40VLDXTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-PSMN013-40VLDXTR-ND
FET, MOSFET Arrays 1727-PSMN013-40VLDXTR-ND
Mosfet Array 2 N-Channel (Half Bridge) 40V 42A (Ta) 46W (Ta) Surface Mount LFPAK56D

Mosfet Array 2 N-Channel (Half Bridge) 40V 42A (Ta) 46W (Ta) Surface Mount LFPAK56D

Buy Now Datasheet
FET, MOSFET Arrays - 1727-PSMN013-40VLDXCT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-PSMN013-40VLDXCT-ND
FET, MOSFET Arrays 1727-PSMN013-40VLDXCT-ND
Mosfet Array 2 N-Channel (Half Bridge) 40V 42A (Ta) 46W (Ta) Surface Mount LFPAK56D

Mosfet Array 2 N-Channel (Half Bridge) 40V 42A (Ta) 46W (Ta) Surface Mount LFPAK56D

Buy Now Datasheet
Singapore, Singapore
40V 42A MOSFET Transistor
289-PSMN013-40VLDX
40V 42A MOSFET Transistor 289-PSMN013-40VLDX
MOSFET 2N-CH 40V 42A LFPAK56D Product overview: PSMN013-40VLDX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 42A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 42A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-PSMN013-40VLDX can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 40V 42A LFPAK56D Product overview: PSMN013-40VLDX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 42A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 42A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-PSMN013-40VLDX can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FET, MOSFET Arrays - PSMN013-40VLDX - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
PSMN013-40VLDX
FET, MOSFET Arrays PSMN013-40VLDX
PSMN013-40VLD - DUAL N-CHANNEL 4

PSMN013-40VLD - DUAL N-CHANNEL 4

Supplier's Site Datasheet
Mosfet, 40V, 42A, 175Deg C, 46W Rohs Compliant Nexperia - 32AJ8629 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, 40V, 42A, 175Deg C, 46W Rohs Compliant Nexperia
32AJ8629
Mosfet, 40V, 42A, 175Deg C, 46W Rohs Compliant Nexperia 32AJ8629
MOSFET, 40V, 42A, 175DEG C, 46W ROHS COMPLIANT: YES

MOSFET, 40V, 42A, 175DEG C, 46W ROHS COMPLIANT: YES

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PSMN013-40VLDX - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PSMN013-40VLDX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PSMN013-40VLDX
MOSFET 2N-CH 40V 42A LFPAK56D

MOSFET 2N-CH 40V 42A LFPAK56D

Supplier's Site

Technical Specifications

  Nexperia B.V. Win Source Electronics RS Components, Ltd. DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number PSMN013-40VLDX 1383213-PSMN013-40VLDX 2434871 1727-PSMN013-40VLDXDKR-ND 289-PSMN013-40VLDX PSMN013-40VLDX 32AJ8629 PSMN013-40VLDX
Product Name Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays MOSFETs FET, MOSFET Arrays 40V 42A MOSFET Transistor FET, MOSFET Arrays Mosfet, 40V, 42A, 175Deg C, 46W Rohs Compliant Nexperia Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MOSFET Operating Mode Enhancement Enhancement
V(BR)DSS 40 volts 40 volts 40 volts
IDSS 42000 milliamps 42000 milliamps
VGS(off) 20 volts
PD 46 milliwatts 46 milliwatts
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