Nexperia B.V. PMPB17EP/S500X

Description
30 V, P-channel Trench MOSFET
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Description
30 V, P-channel Trench MOSFET
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Datasheet
Datasheet Summary
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PMPB17EP is a 30 V, P-channel Trench MOSFET in a leadless DFN2020M-6 (SOT1220-2) package measuring 2 x 2 x 0.65 mm, designed for power management in portable devices and DC-to-DC converters. It features an exposed drain pad for improved thermal conduction and is logic-level compatible. The device supports a continuous drain current of up to -7.7 A at Tₐ = 25 °C and -4.9 A at Tₐ = 100 °C, with a peak drain current of -31 A for single pulses. Its drain-source on-state resistance is 17.5 mΩ at -10 V gate-source voltage and -5.8 A drain current. Maximum junction temperature is 150 °C and total power dissipation is 1.9 W at 25 °C.

Datasheet Summary
Powered by GS/AI

PMPB17EP is a 30 V, P-channel Trench MOSFET in a leadless DFN2020M-6 (SOT1220-2) package measuring 2 x 2 x 0.65 mm, designed for power management in portable devices and DC-to-DC converters. It features an exposed drain pad for improved thermal conduction and is logic-level compatible. The device supports a continuous drain current of up to -7.7 A at Tₐ = 25 °C and -4.9 A at Tₐ = 100 °C, with a peak drain current of -31 A for single pulses. Its drain-source on-state resistance is 17.5 mΩ at -10 V gate-source voltage and -5.8 A drain current. Maximum junction temperature is 150 °C and total power dissipation is 1.9 W at 25 °C.

Suppliers

Company
Product
Description
Supplier Links
 - PMPB17EP/S500X - Rochester Electronics
Newburyport, MA, United States
30 V, P-channel Trench MOSFET

30 V, P-channel Trench MOSFET

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number PMPB17EP/S500X
Polarity P-Channel
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