Nexperia B.V. 20 V, single P-channel Trench MOSFET PMPB33XPZ

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology, measuring 2 x 2 x 0.65 mm with an exposed drain pad for thermal conduction. The device is rated for a drain-source voltage of -20 V, a gate-source voltage range of -12 V to 12 V, and a continuous drain current of -5.5 A at 25 °C. It has a typical on-state resistance of 30 mΩ at -4.5 V gate drive and 25 °C, a total power dissipation of 1.7 W at 25 °C, and a junction temperature range of -55 °C to 150 °C. The package features tin-plated side pads for optical solder inspection and is suitable for applications including battery-powered portable devices, DC-to-DC converters, and power management in computing systems.