Nexperia B.V. 20 V, single P-channel Trench MOSFET PMPB33XPZ

Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction Tin-plated 100 % solderable side pads for optical solder inspection Applications Charging switch for portable devices DC-to-DC converters Power management in battery-driven portable devices Hard disk and computing power management
  • 20 V, single P-channel Trench MOSFET - PMPB33XPZ - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-PMPB33XPZTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMPB33XPZCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMPB33XPZDKR-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction Tin-plated 100 % solderable side pads for optical solder inspection Applications Charging switch for portable devices DC-to-DC converters Power management in battery-driven portable devices Hard disk and computing power management
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
20 V, single P-channel Trench MOSFET - PMPB33XPZ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
20 V, single P-channel Trench MOSFET
PMPB33XPZ
20 V, single P-channel Trench MOSFET PMPB33XPZ
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction Tin-plated 100 % solderable side pads for optical solder inspection Applications Charging switch for portable devices DC-to-DC converters Power management in battery-driven portable devices Hard disk and computing power management

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Trench MOSFET technology
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
  • Exposed drain pad for excellent thermal conduction
  • Tin-plated 100 % solderable side pads for optical solder inspection

Applications

  • Charging switch for portable devices
  • DC-to-DC converters
  • Power management in battery-driven portable devices
  • Hard disk and computing power management
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PMPB33XPZTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMPB33XPZTR-ND
Single FETs, MOSFETs 1727-PMPB33XPZTR-ND
PMPB33XP/SOT1220/DFN 2020MD-6

PMPB33XP/SOT1220/DFN2020MD-6

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMPB33XPZCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMPB33XPZCT-ND
Single FETs, MOSFETs 1727-PMPB33XPZCT-ND
PMPB33XP/SOT1220/DFN 2020MD-6

PMPB33XP/SOT1220/DFN2020MD-6

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMPB33XPZDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMPB33XPZDKR-ND
Single FETs, MOSFETs 1727-PMPB33XPZDKR-ND
PMPB33XP/SOT1220/DFN 2020MD-6

PMPB33XP/SOT1220/DFN2020MD-6

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number PMPB33XPZ 1727-PMPB33XPZTR-ND
Product Name 20 V, single P-channel Trench MOSFET Single FETs, MOSFETs
Polarity P-Channel P-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS -20 volts
IDSS -7900 milliamps
VGS(off) -0.6800 volts
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