Nexperia B.V. 30 V, N-channel Trench MOSFET PMPB13R6XNX

30 V, N-channel Trench MOSFET in a leadless DFN2020M-6 (SOT1220-4) Surface-Mounted Device with a 2 x 2 x 0.6 mm body and an exposed drain pad for thermal conduction. It has a drain-source voltage rating of 30 V, a gate-source voltage range of -12 V to 12 V, and a continuous drain current of up to 10 A at 25 °C under specified mounting conditions. The drain-source on-state resistance is 13.7 mΩ at 4.5 V gate voltage and 7.3 A drain current. The device operates with a junction temperature range of -55 °C to 150 °C and is suitable for charging switches, DC-to-DC converters, and battery-powered power management applications.