Nexperia B.V. 30 V, N-channel Trench MOSFET PMPB13R6XNX

Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-4) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.6 mm Exposed drain pad for excellent thermal conduction Applications Charging switch for portable devices DC-to-DC converters Power management in battery-driven portables Hard disk and computing power management
  • 30 V, N-channel Trench MOSFET - PMPB13R6XNX - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-PMPB13R6XNXTR-ND - DigiKey
    DigiKey
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Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-4) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.6 mm Exposed drain pad for excellent thermal conduction Applications Charging switch for portable devices DC-to-DC converters Power management in battery-driven portables Hard disk and computing power management
Request a Quote Datasheet

Suppliers

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30 V, N-channel Trench MOSFET - PMPB13R6XNX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
30 V, N-channel Trench MOSFET
PMPB13R6XNX
30 V, N-channel Trench MOSFET PMPB13R6XNX
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-4) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.6 mm Exposed drain pad for excellent thermal conduction Applications Charging switch for portable devices DC-to-DC converters Power management in battery-driven portables Hard disk and computing power management

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-4) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Low threshold voltage
  • Trench MOSFET technology
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.6 mm
  • Exposed drain pad for excellent thermal conduction

Applications

  • Charging switch for portable devices
  • DC-to-DC converters
  • Power management in battery-driven portables
  • Hard disk and computing power management
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PMPB13R6XNXTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMPB13R6XNXTR-ND
Single FETs, MOSFETs 1727-PMPB13R6XNXTR-ND
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MOS DISCRETES

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Technical Specifications

  Nexperia B.V. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number PMPB13R6XNX 1727-PMPB13R6XNXTR-ND
Product Name 30 V, N-channel Trench MOSFET Single FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 30 volts
IDSS 10000 milliamps
VGS(off) 12 volts
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