The PMZ600UNE is an N-channel enhancement mode MOSFET designed for surface mounting in a compact DFN1006-3 (SOT883) package measuring 1.0 vó 0.6 vó 0.48 mm. It operates with a maximum drain-source voltage of 20V and supports a continuous drain current of up to 0.6A. The device features a low on-state resistance (R_DS(on)) of 470 mΩ at a gate-source voltage (V_GS) of 4.5V, making it suitable for applications such as relay drivers, high-speed line drivers, low-side load switches, and switching circuits. The PMZ600UNE also includes ESD protection greater than 1 kV HBM, enhancing its reliability in various electronic applications. It is RoHS compliant, ensuring it meets environmental standards.
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
MOSFET N-CH 20V 600MA DFN1006-3
MOSFET N-CH 20V 600MA DFN1006-3
N-Channel 20V 600mA (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount SOT-883
PMZ600UNE - 20 V, N-channel Trench MOSFET DFN 3-Pin Product overview: PMZ600UNEZ from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20 V, DFN. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20 V, DFN, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMZ600UNEZ can be used for catalog matching and distributor lookup.
Win Source Part Number: 1376775-PMZ600UNEZ
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 39 pct.
MSL Level: 1 (Unlimited)
Mfr: Nexperia USA Inc.
Package: Tape & Reel
Product Status: Active
Package / Case: SC-101, SOT-883
Supplier Device Package: SOT-883
Base Product Number: PMZ600
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 21.3 pF @ 10 V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
MOSFET N-CH 20V 600MA DFN1006-3
MOSFET N-CH 20V 600MA DFN1006-3
MOSFET, N-CH, 20V, 0.6A, 0.36W; Transistor Polarity:N Channel; Continuous Drain Current Id:600mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.47ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700mV; Power RoHS Compliant: Yes
| Nexperia B.V. | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMZ600UNEZ | 1727-PMZ600UNEZDKR-ND | 278-PMZ600UNEZ | 1376775-PMZ600UNEZ | PMZ600UNEZ | PMZ600UNEZ | PMZ600UNEZ | 17AH9245 |
| Product Name | 20 V, N-channel Trench MOSFET | Single FETs, MOSFETs | N-Channel 20 V DFN MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 20V, 0.6A, 0.36W; Transistor Polarity Nexperia |
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 20 volts | 20 volts | ||||||
| IDSS | 600 milliamps | 600 milliamps | 600 milliamps | |||||
| VGS(off) | 8 volts | |||||||
| PD | 360 milliwatts | 360 to 2700 milliwatts | 360 milliwatts |
