N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
N-Channel 20V 4.7A (Ta) 510mW (Ta), 3.9W (Tc) Surface Mount TO-236AB
N-Channel 20V 4.7A (Ta) 510mW (Ta), 3.9W (Tc) Surface Mount TO-236AB
N-Channel 20V 4.7A (Ta) 510mW (Ta), 3.9W (Tc) Surface Mount TO-236AB
PMV28UNEA - 20 V, N-channel Trench MOSFET TO-236 3-Pin Product overview: PMV28UNEAR from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMV28UNEAR can be used for catalog matching and distributor lookup.
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089785-PMV28UNEAR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 510mW (Ta), 3.9W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.7A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 10nC @ 4.5V
Max Input Capacitance: 490pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 32 mOhm @ 4.7A, 4.5V
Alternative Parts (Cross-Reference): IRLML2502TRPBF; PMV28UNEA; FDN339AN_NL;
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 20V 4.7A TO236AB
20V 4.7A 32mΩ@4.7A,4.5V 1V@250uA null SOT-23 MOSFETs ROHS
MOSFET N-CH 20V 4.7A TO236AB
MOSFET PMV28UNEA/TO-236AB/R
MOSFET, N- CH, 20V, 4.7A, TO-236AB; Transistor Polarity:N Channel; Continuous Drain Current Id:4.7A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700mV; Power RoHS Compliant: Yes
| Nexperia B.V. | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMV28UNEAR | 1727-2530-6-ND | 278-PMV28UNEAR | 1089785-PMV28UNEAR | PMV28UNEAR | PMV28UNEAR | PMV28UNEAR | PMV28UNEAR | 99Y2085 |
| Product Name | 20 V, N-channel Trench MOSFET | Single FETs, MOSFETs | N-Channel 20 V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV28UNEAR | Single FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, NCh, 20V, 4.7A, To-236Ab; Transistor Polarity Nexperia |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||||
| MOSFET Operating Mode | Enhancement | ||||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | 20 volts | |||||
| IDSS | 4700 milliamps | 4700 milliamps | 4700 milliamps | ||||||
| VGS(off) | 0.7000 volts | 1 volts |
