N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
PMV55ENEA - 60 V, N-channel Trench MOSFET TO-236 3-Pin Product overview: PMV55ENEAR from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMV55ENEAR can be used for catalog matching and distributor lookup.
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089801-PMV55ENEAR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 478mW (Ta), 8.36W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 3.1A (Ta)
Gate-Source Threshold Voltage: 2.7V @ 250μA
Max Gate Charge: 19nC @ 10V
Max Input Capacitance: 646pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 60 mOhm @ 3.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
N-Channel 60V 3.1A (Ta) 478mW (Ta), 8.36W (Tc) Surface Mount TO-236AB
N-Channel 60V 3.1A (Ta) 478mW (Ta), 8.36W (Tc) Surface Mount TO-236AB
N-Channel 60V 3.1A (Ta) 478mW (Ta), 8.36W (Tc) Surface Mount TO-236AB
MOSFET, N- CH, 60V, 3.1A, TO-236AB; Transistor Polarity:N Channel; Continuous Drain Current Id:3.1A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.046ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes
MOSFET N-CH 60V 3.1A TO236AB
MOSFET PMV55ENEA/TO-236AB/R
MOSFET N-CH 60V 3.1A TO236AB
60V 3.1A 60mΩ@10V,3.1A 2.7V@250uA N Channel TO-236AB MOSFETs ROHS
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMV55ENEAR | 278-PMV55ENEAR | 1089801-PMV55ENEAR | 1727-PMV55ENEARTR-ND | 99Y2089 | PMV55ENEAR | PMV55ENEAR | PMV55ENEAR | PMV55ENEAR |
| Product Name | 30 V, N-channel Trench MOSFET | N-Channel 60 V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV55ENEAR | Single FETs, MOSFETs | Mosfet, NCh, 60V, 3.1A, To-236Ab; Transistor Polarity Nexperia | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs |
| MOSFET Operating Mode | Enhancement | ||||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | 60 volts | |||||
| IDSS | 3100 milliamps | 3100 milliamps | 3100 milliamps | ||||||
| VGS(off) | 20 volts | 2.7 volts | |||||||
| PD | 478 milliwatts | 478 to 8360 milliwatts | 478 milliwatts | 478 milliwatts |
