N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
MOSFET N-CH 20V 1.8A DFN1006-3
N-Channel 20V 1.8A (Ta) 350mW (Ta), 6.25W (Tc) Surface Mount SOT-883
N-Channel 20V 1.8A (Ta) 350mW (Ta), 6.25W (Tc) Surface Mount SOT-883
N-Channel 20V 1.8A (Ta) 350mW (Ta), 6.25W (Tc) Surface Mount SOT-883
PMZ130UNE - 20 V, N-channel Trench MOSFET DFN 3-Pin Product overview: PMZ130UNEYL from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20 V, DFN. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20 V, DFN, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMZ130UNEYL can be used for catalog matching and distributor lookup.
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1324760-PMZ130UNEYL
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 10,000
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.8A, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 350mW, 6.25W (Tc)
Supplier Device Package: SOT-883
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 10 V
Vgs (Max): ±8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: SC-101, SOT-883
ECCN: EAR99
Fake Threat In the Open Market: 71
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 1727-2316-1,1727-231
Base Product Number: PMZ130
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
RoHS Status: ROHS3 Compliant
MOSFET Transistor, N Channel, 1.8 A, 20 V, 0.12 ohm, 4.5 V, 700 mV RoHS Compliant: Yes
MOSFET N-CH 20V 1.8A DFN1006-3
| Nexperia B.V. | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | PMZ130UNEYL | PMZ130UNEYL | 1727-2316-2-ND | 278-PMZ130UNEYL | 1324760-PMZ130UNEYL | 68Y7862 | PMZ130UNEYL |
| Product Name | 20 V, N-channel Trench MOSFET | Single FETs, MOSFETs | Single FETs, MOSFETs | N-Channel 20 V DFN MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet Transistor, N Channel, 1.8 A, 20 V, 0.12 Ohm, 4.5 V, 700 Mv Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 20 volts | 20 volts | |||||
| IDSS | 1800 milliamps | 1800 milliamps | |||||
| VGS(off) | 0.7000 volts |
