Nexperia B.V. 20 V, N-channel Trench MOSFET PMZ130UNEYL

Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology ElectroStatic Discharge (ESD) protection: 2 kV HBM Leadless ultra small package: 1.0 × 0.6 × 0.48 mm Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits
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Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology ElectroStatic Discharge (ESD) protection: 2 kV HBM Leadless ultra small package: 1.0 × 0.6 × 0.48 mm Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits
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Datasheet
Datasheet Summary
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N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. The device has a drain-source voltage rating of 20 V, a gate-source voltage rating of ±8 V, and a continuous drain current of 1.8 A at 25 °C with V_GS = 4.5 V. The on-state resistance is 120 to 150 mΩ under the same conditions. It provides 2 kV HBM ElectroStatic Discharge (ESD) protection and a total power dissipation of 350 mW at 25 °C ambient temperature. The operating junction temperature range is -55 °C to 150 °C.

Datasheet Summary
Powered by GS/AI

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. The device has a drain-source voltage rating of 20 V, a gate-source voltage rating of ±8 V, and a continuous drain current of 1.8 A at 25 °C with V_GS = 4.5 V. The on-state resistance is 120 to 150 mΩ under the same conditions. It provides 2 kV HBM ElectroStatic Discharge (ESD) protection and a total power dissipation of 350 mW at 25 °C ambient temperature. The operating junction temperature range is -55 °C to 150 °C.

Suppliers

Company
Product
Description
Supplier Links
20 V, N-channel Trench MOSFET - PMZ130UNEYL - Nexperia B.V.
Nijmegen, Netherlands
20 V, N-channel Trench MOSFET
PMZ130UNEYL
20 V, N-channel Trench MOSFET PMZ130UNEYL
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology ElectroStatic Discharge (ESD) protection: 2 kV HBM Leadless ultra small package: 1.0 × 0.6 × 0.48 mm Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Very fast switching
  • Low threshold voltage
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection: 2 kV HBM
  • Leadless ultra small package: 1.0 × 0.6 × 0.48 mm

Applications

  • Relay driver
  • High-speed line driver
  • Low-side loadswitch
  • Switching circuits
Supplier's Site Datasheet
Singapore, Singapore
N-Channel 20 V DFN MOSFET Transistor
278-PMZ130UNEYL
N-Channel 20 V DFN MOSFET Transistor 278-PMZ130UNEYL
PMZ130UNE - 20 V, N-channel Trench MOSFET DFN 3-Pin Product overview: PMZ130UNEYL from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20 V, DFN. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20 V, DFN, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMZ130UNEYL can be used for catalog matching and distributor lookup.

PMZ130UNE - 20 V, N-channel Trench MOSFET DFN 3-Pin Product overview: PMZ130UNEYL from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20 V, DFN. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20 V, DFN, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMZ130UNEYL can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324760-PMZ130UNEYL - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1324760-PMZ130UNEYL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1324760-PMZ130UNEYL
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1324760-PMZ130UNEYL Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Reel - TR Standard Package: 10,000 Mounting: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 1.8A Rds On (Max) @ Id, Vgs: 150mOhm @ 1.8A, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Power Dissipation (Max): 350mW, 6.25W (Tc) Supplier Device Package: SOT-883 Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 10 V Vgs (Max): ±8V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: SC-101, SOT-883 ECCN: EAR99 Fake Threat In the Open Market: 71 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: 1727-2316-1,1727-231 6-2,568-12602-2,568- 12602-1,568-12602-6- ND,568-12602-2-ND,56 8-12602-1-ND,9340686 08315,1727-2316-6,56 8-12602-6 Base Product Number: PMZ130 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V RoHS Status: ROHS3 Compliant

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1324760-PMZ130UNEYL
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Reel - TR
Standard Package: 10,000
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.8A, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 350mW, 6.25W (Tc)
Supplier Device Package: SOT-883
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 10 V
Vgs (Max): ±8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: SC-101, SOT-883
ECCN: EAR99
Fake Threat In the Open Market: 71
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 1727-2316-1,1727-2316-2,568-12602-2,568-12602-1,568-12602-6-ND,568-12602-2-ND,568-12602-1-ND,934068608315,1727-2316-6,568-12602-6
Base Product Number: PMZ130
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMZ130UNEYLTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMZ130UNEYLTR-ND
Single FETs, MOSFETs 1727-PMZ130UNEYLTR-ND
N-Channel 20V 1.8A (Ta) 350mW (Ta), 6.25W (Tc) Surface Mount SOT-883

N-Channel 20V 1.8A (Ta) 350mW (Ta), 6.25W (Tc) Surface Mount SOT-883

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMZ130UNEYLDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMZ130UNEYLDKR-ND
Single FETs, MOSFETs 1727-PMZ130UNEYLDKR-ND
N-Channel 20V 1.8A (Ta) 350mW (Ta), 6.25W (Tc) Surface Mount SOT-883

N-Channel 20V 1.8A (Ta) 350mW (Ta), 6.25W (Tc) Surface Mount SOT-883

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMZ130UNEYLCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMZ130UNEYLCT-ND
Single FETs, MOSFETs 1727-PMZ130UNEYLCT-ND
N-Channel 20V 1.8A (Ta) 350mW (Ta), 6.25W (Tc) Surface Mount SOT-883

N-Channel 20V 1.8A (Ta) 350mW (Ta), 6.25W (Tc) Surface Mount SOT-883

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMZ130UNEYL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMZ130UNEYL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMZ130UNEYL
MOSFET N-CH 20V 1.8A DFN1006-3

MOSFET N-CH 20V 1.8A DFN1006-3

Supplier's Site
Single FETs, MOSFETs - PMZ130UNEYL - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PMZ130UNEYL
Single FETs, MOSFETs PMZ130UNEYL
MOSFET N-CH 20V 1.8A DFN1006-3

MOSFET N-CH 20V 1.8A DFN1006-3

Supplier's Site Datasheet
Mosfet Transistor, N Channel, 1.8 A, 20 V, 0.12 Ohm, 4.5 V, 700 Mv Rohs Compliant Nexperia - 68Y7862 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 1.8 A, 20 V, 0.12 Ohm, 4.5 V, 700 Mv Rohs Compliant Nexperia
68Y7862
Mosfet Transistor, N Channel, 1.8 A, 20 V, 0.12 Ohm, 4.5 V, 700 Mv Rohs Compliant Nexperia 68Y7862
MOSFET Transistor, N Channel, 1.8 A, 20 V, 0.12 ohm, 4.5 V, 700 mV RoHS Compliant: Yes

MOSFET Transistor, N Channel, 1.8 A, 20 V, 0.12 ohm, 4.5 V, 700 mV RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number PMZ130UNEYL 278-PMZ130UNEYL 1324760-PMZ130UNEYL 1727-PMZ130UNEYLTR-ND PMZ130UNEYL PMZ130UNEYL 68Y7862
Product Name 20 V, N-channel Trench MOSFET N-Channel 20 V DFN MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs Mosfet Transistor, N Channel, 1.8 A, 20 V, 0.12 Ohm, 4.5 V, 700 Mv Rohs Compliant Nexperia
MOSFET Operating Mode Enhancement
V(BR)DSS 20 volts 20 volts
IDSS 1800 milliamps 1800 milliamps
VGS(off) 8 volts
PD 350 milliwatts 350 to 6250 milliwatts 350 milliwatts
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