P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
PMV50UPE - 20 V, single P-channel Trench MOSFET
P-Channel 20V 3.7A (Ta) 500mW (Ta) Surface Mount TO-236AB
MOSFET P-CH 20V 3.7A TO236AB
MOSFET PMV50UPE/TO-236AB/RE
| Nexperia B.V. | Rochester Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMV50UPEVL | PMV50UPEVL | PMV50UPEVL-ND | PMV50UPEVL | PMV50UPEVL |
| Product Name | 20 V, single P-channel Trench MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | |
| Polarity | P-Channel | P-Channel | P-Channel | ||
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | -20 volts | ||||
| IDSS | -3700 milliamps | ||||
| VGS(off) | -0.6000 volts |
