P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. The device has a drain-source voltage rating of -20 V, a gate-source voltage rating of ±12 V, and a continuous drain current of -2.8 A at 25 °C with a 6 cm² drain pad. It exhibits a drain-source on-state resistance of 67 mΩ to 78 mΩ at -4.5 V gate voltage and 25 °C, with total power dissipation of 890 mW under the same conditions. Electrostatic discharge protection is rated at 2 kV HBM, and the part is AEC-Q101 qualified. Thermal resistance from junction to ambient is 120 K/W to 140 K/W under typical mounting conditions.
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
P-Channel 20V 2.8A (Ta) 480mW (Ta), 6.25W (Tc) Surface Mount TO-236AB
P-Channel 20V 2.8A (Ta) 480mW (Ta), 6.25W (Tc) Surface Mount TO-236AB
P-Channel 20V 2.8A (Ta) 480mW (Ta), 6.25W (Tc) Surface Mount TO-236AB
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089805-PMV65XPEAR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 480mW (Ta), 6.25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.8A (Ta)
Gate-Source Threshold Voltage: 1.25V @ 250μA
Max Gate Charge: 9nC @ 4.5V
Max Input Capacitance: 618pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 78 mOhm @ 2.8A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
MOSFET Transistor, P Channel, -2.8 A, -20 V, 0.067 ohm, -4.5 V, -1 V RoHS Compliant: Yes
MOSFET P-CH 20V 2.8A TO236AB
MOSFET 20V P-channel Trench MOSFET
MOSFET P-CH 20V 2.8A TO236AB
| Nexperia B.V. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMV65XPEAR | 1727-PMV65XPEARCT-ND | 1089805-PMV65XPEAR | 68Y7844 | PMV65XPEAR | PMV65XPEAR | PMV65XPEAR |
| Product Name | 20 V, P-channel Trench MOSFET | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV65XPEAR | Mosfet Transistor, P Channel, -2.8 A, -20 V, 0.067 Ohm, -4.5 V, -1 V Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | -20 volts | 20 volts | 20 volts | ||||
| IDSS | -3300 milliamps | 2800 milliamps | |||||
| VGS(off) | 12 volts | ||||||
| PD | 480 milliwatts | 480 to 6250 milliwatts | 480 milliwatts |
