N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089807-PMV90ENER
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 460mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236AB
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 5.5nC @ 10V
Max Input Capacitance: 160pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 72 mOhm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Sufficient
N-Channel 30V 3A (Ta) 460mW (Ta) Surface Mount TO-236AB
N-Channel 30V 3A (Ta) 460mW (Ta) Surface Mount TO-236AB
N-Channel 30V 3A (Ta) 460mW (Ta) Surface Mount TO-236AB
PMV90ENE - 30 V, N-channel Trench MOSFET TO-236 3-Pin Product overview: PMV90ENER from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMV90ENER can be used for catalog matching and distributor lookup.
MOSFET N-CHANNEL 30V 3A TO236AB
MOSFET PMV90ENE/TO-236AB/RE
MOSFET, N-CH, 30V, 3A, TO-236AB ROHS COMPLIANT: YES
MOSFET N-CHANNEL 30V 3A TO236AB
| Nexperia B.V. | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | PMV90ENER | 1089807-PMV90ENER | 1727-PMV90ENERCT-ND | 278-PMV90ENER | PMV90ENER | PMV90ENER | 74AH1171 | PMV90ENER |
| Product Name | 30 V, N-channel Trench MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV90ENER | Single FETs, MOSFETs | N-Channel 30 V MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 30V, 3A, To-236Ab Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 30 volts | 30 volts | ||||||
| IDSS | 3700 milliamps | 3000 milliamps | ||||||
| VGS(off) | 20 volts | |||||||
| TJ | 150 C (302 F) | -55 to 150 C (-67 to 302 F) |
