Nexperia B.V. Datasheets for Transistors

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
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Product Name Notes
NMBT3904R
NMBT3906,215
NMBT3906R
NP100T12P2T3Z
NX2301P
NX2301P,215.
NX3008CBKV/DG/B2X
NX3008NBK
NX3008PBK 215.
NX3008PBKMB,315
NX3008PBKS,115.
NX3008PBKV
NX3008PBKW
NX3020NAKT
NX3020NAKV/S501X
NX6020NBKS,115
NX7002AK
NX7002AK 215.
NX7002AK2R
NX7002AK2VL
NX7002AKAR
NX7002AKS/ZLX
NX7002BK/S911R
NX7002BKM
NX7002BKS
NX7002BKSQN1X
NX7002BKW/S500,X
NX7002BKW/S500X
NXS7002AKR
ON5173,118
ON5173118
ON5233,118
ON5258,215
ON5278/C4127
OP540/BD/C3,027
PBHV3160Z
PBHV8115T
PBHV8115Z
PBHV8140Z
PBHV8215Z
PBHV8540T
PBHV8540X
PBHV8540Z
PBHV9040T
PBHV9040X
PBHV9040Z
PBHV9040Z/ZLX
PBHV9050T
PBHV9050Z
PBHV9050Z/ZLX
PBHV9115T
PBHV9115X
PBHV9215Z
PBHV9414Z
PBHV9515QAZ
PBHV9540Z
PBHV9560Z
PBLS1501V,115
PBLS1501Y,115
PBLS1502Y,115
PBLS1504Y
PBLS1504Y,115
PBLS1504Y-QX
PBLS2004D,115
PBLS2021D,115
PBLS2022D,115
PBLS2023D,115
PBLS2024D,115
PBLS4001D,115
PBLS4002D,115
PBLS4004D,115
PBLS6004D,115
PBLS6022D
PBLS6022D,115
PBLS6023D
PBRP123YT
PBSM5240PF,115
PBSM5240PFH,115
PBSS2515M,315
PBSS2515MB,315
PBSS2515VPN,115
PBSS2515VS,115
PBSS2515VS,315
PBSS2515YPN/ZLX
PBSS301ND,115
PBSS301NX,115
PBSS301NX-QX
PBSS301NZ,135
PBSS301PD,115
PBSS301PD/SG,125
PBSS301PX,115
PBSS301PX-QX
PBSS301PZ,135
40 V 500 mA PNP/NPN loadswitch double transistor -- PBLS4003Y,115
40 V 500 mA PNP/NPN loadswitch double transistor -- PBLS4003Y-QX
40 V 500 mA PNP/NPN loadswitch double transistor -- PBLS4005Y,115
40 V 500 mA PNP/NPN loadswitch double transistor -- PBLS4005Y-QX
40 V 500 mA PNP/NPN loadswitch double transistor
40 V, 500 mA PNP loadswitch transistor -- PBLS4002Y,115
40 V, 500 mA PNP loadswitch transistor
80 V, 100 mA PNP/PNP resistor-equipped double transistors -- NHUMB10F
80 V, 100 mA PNP/PNP resistor-equipped double transistors -- NHUMB10X
80 V, 100 mA PNP/PNP resistor-equipped double transistors -- NHUMB13F
80 V, 100 mA PNP/PNP resistor-equipped double transistors -- NHUMB13X
80 V, 100 mA PNP/PNP resistor-equipped double transistors -- NHUMB9F
80 V, 100 mA PNP/PNP resistor-equipped double transistors -- NHUMB9X
80 V, 100 mA PNP/PNP resistor-equipped double transistors
60 V / 50 V, 170 mA / 160 mA N/P-channel Trench MOSFET -- NX6020CAKSAX
60 V / 50 V, 170 mA / 160 mA N/P-channel Trench MOSFET -- NX6020CAKSX
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Very fast...
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET -- NX1029X,115
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET -- NX1029XH
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very...
30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET -- NX3008CBKV,115
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage...
30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET -- NX3008CBKS,115
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching...
60 V, dual N-channel Trench MOSFET -- NX7002BKXBZ
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Leadless ultra...
30 V, 200 mA dual N-channel Trench MOSFET -- NX3020NAKV,115
30 V, 200 mA dual N-channel Trench MOSFET -- NX3020NAKVYL
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching...
30 V, dual N-channel Trench MOSFET -- NX3020NAKS-QX
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range...
60 V, dual N-channel Trench MOSFET -- NX7002BKSX
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching...
60 V, dual N-channel Trench MOSFET -- NX138AKSF
60 V, dual N-channel Trench MOSFET -- NX138AKSX
60 V, dual N-channel Trench MOSFET -- NX138BKSF
60 V, dual N-channel Trench MOSFET -- NX138BKSX
60 V, dual N-channel Trench MOSFET -- NX6008NBKSX
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast...
30 V, 350 mA dual N-channel Trench MOSFET -- NX3008NBKS,115
30 V, 350 mA dual N-channel Trench MOSFET -- NX3008NBKSH
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Low threshold...
30 V, 180 mA dual N-channel Trench MOSFET -- NX3020NAKS,115
60 V, dual N-channel Trench MOSFET -- NX7002AKS,115
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Trench MOSFET...
50 V, dual N-channel Trench MOSFET -- NX5020UNBKSX
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very low threshold voltage Very...
30 V, 400 mA dual N-channel Trench MOSFET -- NX3008NBKV,115
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching...
30 V, dual N-channel Trench MOSFET -- NX3020NAKRA-QZ
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast...
30 V, 200 mA dual P-channel Trench MOSFET -- NX3008PBKS,115
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Low threshold...
30 V, 220 mA dual P-channel Trench MOSFET -- NX3008PBKV,115
Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching...
15 V PNP BISS loadswitch -- PBLS1503Y,115
Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package. Features and benefits Low VCEsat (BISS) and resistor-equipped transistor in one package Low 'threshold' voltage (< 1...
60 V, N-channel Trench MOSFET -- NX7002BKHH
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching...
50 V, N-channel Trench MOSFET -- NX5008NBKHH
60 V, N-channel Trench MOSFET -- NX138BKHH
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast...
60 V, N-channel Trench MOSFET -- NX7002BKM/DYL
60 V, N-channel Trench MOSFET -- NX7002BKMYL
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching...
50 V, N-channel Trench MOSFET -- NX5008NBKMYL
60 V, N-channel Trench MOSFET -- NX138BKMYL
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast...
60 V, N-channel Trench MOSFET -- NX7002BKMBYL
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching...
30 V, N-channel Trench MOSFET -- NX3020NAKQB-QZ
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1110D-3 (SOT8015) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range...
60 V, N-channel Trench MOSFET -- NX138AKHH
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless, ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching...
60 V, N-channel Trench MOSFET -- NX138AKMYL
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless, ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching...
60 V, 360 mA N-channel Trench MOSFET -- NX5020UNBKR
60 V, N-channel Trench MOSFET -- NX7002BKR
60 V, N-channel Trench MOSFET -- NX7002BKVL
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET...
60 V, N-channel Trench MOSFET -- NX138AKR
60 V, N-channel Trench MOSFET -- NX138AKVL
60 V, single N-channel Trench MOSFET -- NX138BKR
60 V, single N-channel Trench MOSFET -- NX138BKVL
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench...
30 V, 400 mA N-channel Trench MOSFET -- NX3008NBK,215
30 V, 400 mA N-channel Trench MOSFET -- NX3008NBKVL
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Low threshold voltage Trench...
30 V, single N-channel Trench MOSFET -- NX3020NAK,215
60 V, single N-channel Trench MOSFET -- NX7002AK,215
60 V, single N-channel Trench MOSFET -- NX7002AKVL
60 V, single N-channel Trench MOSFET -- NX7002AKZ
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Trench MOSFET technology ESD...
30 V, N-channel Trench MOSFET -- NX3020NAK-QR
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range Tj =...
20 V, N-channel Trench MOSFET -- NXV40UNR
30 V, N-channel Trench MOSFET -- NXV55UNR
60 V, N-channel Trench MOSFET -- NX6008NBKR
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET...
30 V, 180 mA N-channel Trench MOSFET -- NX3020NAKW,115
60 V, single N-channel Trench MOSFET -- NX7002AKW,115
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Trench MOSFET technology ESD...
60 V, single N-channel Trench MOSFET -- NX7002BKWX
N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench...
60 V, N-channel Trench MOSFET -- NX138BKWF
60 V, N-channel Trench MOSFET -- NX138BKWX
60 V, N-channel Trench MOSFET -- NX6008NBKWX
N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching...
30 V, N-channel Trench MOSFET -- NX3020NAKW-QX
N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range T...
30 V, 350 mA N-channel Trench MOSFET -- NX3008NBKW,115
N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Low threshold voltage...
50 V, N-channel Trench MOSFET -- NX5020UNBKWX
N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very low threshold voltage Very fast...
50 V, 150 mA NPN general-purpose transistors -- NXP3875GR
50 V, 150 mA NPN general-purpose transistors -- NXP3875YR
50 V, 150 mA NPN general-purpose transistors -- NXP3875YVL
NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits General-purpose transistors Small SMD plastic package Two different current gain selections AEC-Q101 qualified Applications...
500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistor -- PBHV8550XF
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits High voltage Low...
600 V, 0.1 A NPN high-voltage low VCEsat transistor -- PBHV2160Z-QX
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV3160Z-Q Features and benefits Low collector-emitter...
150 V, 1 A NPN high-voltage low VCEsat transistor -- PBHV8115Z,115
150 V, 1 A NPN high-voltage low VCEsat transistor -- PBHV8115Z-QX
NPN high-voltage low VCEsat in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115Z Features and benefits High voltage Low collector-emitter saturation voltage VCEsat...
150 V, 500 mA NPN high-voltage low VCEsat transistor -- PBHV8515QAZ
NPN high-voltage low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Features and benefits High voltage Low...
150 V, 2 A NPN high-voltage low VCEsat transistor -- PBHV8215Z-QX
NPN high-voltage low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9215Z-Q Features and benefits High voltage Low collector-emitter saturation voltage V...
150 V, 2 A NPN high-voltage low VCEsat transistor -- PBHV8215Z,115
NPN high-voltage low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9215Z Features and benefits High voltage Low collector-emitter saturation voltage V...
500 V, 1 A NPN high-voltage low VCEsat transistor -- PBHV8140Z-QX
NPN high-voltage low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9540Z-Q Features and benefits High voltage Low collector-emitter saturation voltage V...
500 V, 1 A NPN high-voltage low VCEsat transistor -- PBHV8140Z,115
NPN high-voltage low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9540Z Features and benefits High voltage Low collector-emitter saturation voltage V...
180 V, 1 A NPN high-voltage low VCEsat transistor -- PBHV8118T,215
180 V, 1 A NPN high-voltage low VCEsat transistor -- PBHV8118T-QR
NPN high-voltage low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits High voltage Low collector-emitter saturation voltage VCEsat High collector current...
150 V, 1 A NPN high-voltage low VCEsat transistor -- PBHV8115T-QR
NPN high-voltage low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115T-Q Features and benefits High voltage Low collector-emitter saturation voltage VCEsat...
150 V, 1 A NPN high-voltage low VCEsat transistor -- PBHV8115T,215
NPN high-voltage low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115T Features and benefits High voltage Low collector-emitter saturation voltage VCEsat...
150 V, 1 A NPN high-voltage low VCEsat transistor -- PBHV8115TLH-QR
NPN high-voltage low VCEsat transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115TLH-Q Features and benefits High voltage Low collector-emitter saturation voltage VCEsat High...
150 V, 1 A NPN high-voltage low VCEsat transistor -- PBHV8115TLHR
NPN high-voltage low VCEsat transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115TLH Features and benefits High voltage Low collector-emitter saturation voltage VCEsat High...
600 V, 0.1 A NPN high-voltage low VCEsat transistor -- PBHV2160ZX
NPN high-voltage low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV3160Z Features and benefits Low collector-emitter saturation voltage VCEsat High...
500 V, 0.5 A NPN high-voltage low VCEsat transistor -- PBHV8540Z-QX
NPN high-voltage low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9040Z-Q Features and benefits High voltage Low collector-emitter saturation voltage V...
500 V, 0.5 A NPN high-voltage low VCEsat transistor -- PBHV8540Z,115
NPN high-voltage low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9040Z Features and benefits High voltage Low collector-emitter saturation voltage V...
600 V, 0.5 A NPN high-voltage low VCEsat transistor -- PBHV8560Z-QX
NPN high-voltage low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9560Z-Q Features and benefits Low collector-emitter saturation voltage VCEsat High...
600 V, 0.5 A NPN high-voltage low VCEsat transistor -- PBHV8560ZX
NPN high-voltage low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9560Z Features and benefits Low collector-emitter saturation voltage VCEsat High...
500 V, 0.5 A NPN high-voltage low VCEsat transistor -- PBHV8540T-QR
NPN high-voltage low VCEsat transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9040T-Q Features and benefits High voltage Low collector-emitter saturation voltage VCEsat...
500 V, 0.5 A NPN high-voltage low VCEsat transistor -- PBHV8540T,215
NPN high-voltage low VCEsat transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9040T Features and benefits High voltage Low collector-emitter saturation voltage VCEsat...
500 V, 0.5 A NPN high-voltage low VCEsat transistor -- PBHV8540X,115
500 V, 0.5 A NPN high-voltage low VCEsat transistor -- PBHV8540X-QX
NPN high-voltage low VCEsat transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9040X Features and benefits High voltage Low collector-emitter...
150 V, 1 A NPN high-voltage low VCEsat transistor -- PBHV8115X-QX
NPN high-voltage low VCEsat transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115X-Q Features and benefits High voltage Low collector-emitter...
150 V, 1 A NPN high-voltage low VCEsat transistor -- PBHV8115X,115
NPN high-voltage low VCEsat transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115X Features and benefits High voltage Low collector-emitter...
150 V, 500 mA NPN high-voltage low VCEsat transistor -- PBHV8515QA-QZ
NPN high-voltage low VCEsattransistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Features and benefits High voltage Low...
50 V, 100 mA low VCEsat NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ -- PBDTC114ETR
NPN low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBDTA114ET Features and benefits Low collector-emitter saturation voltage VCEsat...
50 V, 100 mA low VCEsat NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ -- PBDTC114ETH-QR
NPN low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBDTA114ETH-Q Features and benefits Low collector-emitter saturation voltage VCEsat...
50 V, 100 mA low VCEsat NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ -- PBDTC114YTR
NPN low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBDTA114YT Features and benefits Low collector-emitter saturation voltage VCEsat...
50 V, 100 mA low VCEsat NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ -- PBDTC114YTH-QR
NPN low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBDTA114YTH-Q Features and benefits Low collector-emitter saturation voltage VCEsat...
50 V, 100 mA low VCEsat NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ -- PBDTC123JTR
NPN low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBDTA123JT Features and benefits Low collector-emitter saturation voltage VCEsat...
50 V, 100 mA low VCEsat NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ -- PBDTC123JTH-QR
NPN low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBDTA123JTH-Q Features and benefits Low collector-emitter saturation voltage VCEsat...
50 V, 100 mA low VCEsat NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PBDTC124ETR
NPN low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBDTA124ET Features and benefits Low collector-emitter saturation voltage VCEsat...
50 V, 100 mA low VCEsat NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PBDTC124ETH-QR
NPN low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBDTA124ETH-Q Features and benefits Low collector-emitter saturation voltage VCEsat...
50 V, 100 mA low VCEsat NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ -- PBDTC143XTR
NPN low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBDTA143XT Features and benefits Low collector-emitter saturation voltage VCEsat...
50 V, 100 mA low VCEsat NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ -- PBDTC143XTH-QR
NPN low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBDTA143XTH-Q Features and benefits Low collector-emitter saturation voltage VCEsat...
50 V, 100 mA low VCEsat NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ -- PBDTC143ZTR
NPN low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBDTA143ZT Features and benefits Low collector-emitter saturation voltage VCEsat...
50 V, 100 mA low VCEsat NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ -- PBDTC143ZTH-QR
NPN low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBDTA143ZTH-Q Features and benefits Low collector-emitter saturation voltage VCEsat...
50 V, 100 mA low VCEsat NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PBDTC144ETR
NPN low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBDTA144ET Features and benefits Low collector-emitter saturation voltage VCEsat...
50 V, 100 mA low VCEsat NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PBDTC144ETH-QR
NPN low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBDTA144ETH-Q Features and benefits Low collector-emitter saturation voltage VCEsat...
40 V, 600 mA NPN PB RET; R1 = 1 kΩ, R2 = 1 kΩ -- PBRN113ET-QR
NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBRP113ET-Q Features and benefits 600 mA output current capability...
40 V, 600 mA NPN PB RET; R1 = 1 kΩ, R2 = 1 kΩ -- PBRN113ET,215
NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBRP113ET Features and benefits 600 mA output current capability...
40 V, 600 mA NPN PB RET; R1 = 1 kΩ, R2 = 10 kΩ -- PBRN113ZT-QR
NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBRP113ZT-Q Features and benefits 600 mA output current capability...
40 V, 600 mA NPN PB RET; R1 = 1 kΩ, R2 = 10 kΩ -- PBRN113ZT,215
NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBRP113ZT Features and benefits 600 mA output current capability...
40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ -- PBRN123ET-QR
NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBRP123ET-Q Features and benefits 600 mA output current capability...
40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ -- PBRN123ET,215
NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBRP123ET Features and benefits 600 mA output current capability...
40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ -- PBRN123YT-QR
NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBRP123YT-Q Features and benefits 600 mA output current capability...
40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ -- PBRN123YT,215
NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBRP123YT Features and benefits 600 mA output current capability...
20 V, 5.8 A NPN low VCEsat transistor -- PBSS302NZ-QF
NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM...
20 V, 5.8 A NPN low VCEsat transistor -- PBSS302NZ,135
NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS302PZ Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability...
40 V, 4 A NPN low VCEsat transistor -- PBSS302ND-QH
40 V, 4 A NPN low VCEsat transistor -- PBSS302ND-QX
NPN low VCEsat transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. Features and benefits Ultra low collector-emitter saturation voltage VCEsat 4 A continuous collector current...
40 V, 4 A NPN low VCEsat transistor -- PBSS302ND,115
40 V, 4 A NPN low VCEsat transistor -- PBSS302NDH
NPN low VCEsat transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS302PD Features and benefits Ultra low collector-emitter saturation voltage VCEsat 4 A...
40 V, 0.5 A NPN low VCEsat transistor -- PBSS2540M-QYL
NPN low VCEsat transistor in a SOT883 small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3540M-Q Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability...
40 V, 0.5 A NPN low VCEsat transistor -- PBSS2540M,315
NPN low VCEsat transistor in a SOT883 small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3540M Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability...
20 V, 5.3 A NPN low VCEsat transistor -- PBSS302NX-QX
NPN low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS302PX-Q Features and benefits Low collector-emitter saturation voltage VCEsat...
20 V, 5.3 A NPN low VCEsat transistor -- PBSS302NX,115
NPN low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS302PX Features and benefits Low collector-emitter saturation voltage VCEsat...
40 V, 0.5 A NPN low VCEsat transistor -- PBSS2540MB,315
NPN low VCEsattransistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3540MB. Features and benefits Low collector-emitter saturation voltage VCEsat High...
40 V, 0.5 A NPN low VCEsat transistor -- PBSS2540MB-QYL
NPN low VCEsattransistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3540MB Features and benefits Leadless ultra small SMD plastic package Low...
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC114ETR
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC114ETVL
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC114YTR
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC114YTVL
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC123JTR
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC123JTVL
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC124ETR
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC124ETVL
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC143ZTR
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC143ZTVL
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC144ETR
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC144ETVL
NPN Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1.Product overview Type number - R1 - R2 - Package - PNP complement: kΩ
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC114ET-QR
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC114YT-QR
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC123JT-QR
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC124ET-QR
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC143ZT-QR
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC144ET-QR
NPN Resistor-Equipped Transistor (RET) family in a small SOT23 Surface-Mounted Device (SMD) plastic package. Table 1.Product overview Type number - R1 - R2 - Package - PNP complement: kΩ -...
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC114EU-QX
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC114EUF
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC114EUX
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC114YU-QX
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC114YUF
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC114YUX
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC123JU-QX
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC123JUF
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC123JUX
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC124EU-QX
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC124EUF
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC124EUX
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC143ZU-QX
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC143ZUF
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC143ZUX
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC144EU-QX
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC144EUF
80 V, 100 mA NPN resistor-equipped transistors -- NHDTC144EUX
NPN Resistor-Equipped Transistor (RET) family in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Table 1.Product overview Type number - R1 - R2 - Package - PNP complement:...
80 V, 100 mA NPN/NPN resistor-equipped double transistors -- NHUMH1-QX
80 V, 100 mA NPN/NPN resistor-equipped double transistors -- NHUMH11-QX
80 V, 100 mA NPN/NPN resistor-equipped double transistors -- NHUMH11F
80 V, 100 mA NPN/NPN resistor-equipped double transistors -- NHUMH11X
80 V, 100 mA NPN/NPN resistor-equipped double transistors -- NHUMH1F
80 V, 100 mA NPN/NPN resistor-equipped double transistors -- NHUMH1X
80 V, 100 mA NPN/NPN resistor-equipped double transistors -- NHUMH2-QX
80 V, 100 mA NPN/NPN resistor-equipped double transistors -- NHUMH2F
80 V, 100 mA NPN/NPN resistor-equipped double transistors -- NHUMH2X
NPN/NPN Resistor-Equipped double Transistor (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Table 1.Product overview Type number - R1 - R2 - Package - PNP/PNP...
80 V, 100 mA NPN resistor-equipped transistors -- NHUMH10-QX
80 V, 100 mA NPN resistor-equipped transistors -- NHUMH13-QX
80 V, 100 mA NPN resistor-equipped transistors -- NHUMH9-QX
80 V, 100 mA NPN/NPN resistor-equipped double transistor -- NHUMH10F
80 V, 100 mA NPN/NPN resistor-equipped double transistor -- NHUMH10X
80 V, 100 mA NPN/NPN resistor-equipped double transistor -- NHUMH13F
80 V, 100 mA NPN/NPN resistor-equipped double transistor -- NHUMH13X
80 V, 100 mA NPN/NPN resistor-equipped double transistor -- NHUMH9F
80 V, 100 mA NPN/NPN resistor-equipped double transistor -- NHUMH9X
NPN/NPN Resistor-Equipped double Transistors (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Table 1.Product overview Type number - R1 - R2 - Package - PNP/PNP...
40 V, 600 mA NPN/PNP general-purpose transistors -- NMB2227AF
40 V, 600 mA NPN/PNP general-purpose transistors -- NMB2227AH
40 V, 600 mA NPN/PNP general-purpose transistors -- NMB2227AX
40 V, 600 mA NPN/PNP general-purpose transistors -- NMB2227AZ
NPN/PNP general-purpose transistors in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. Features and benefits General-purpose transistor High current Reduces component count on Printed-Circuit Board (PCB) Reduces pick and...
15 V low VCEsat NPN/PNP transistor -- PBSS2515YPN,115
15 V low VCEsat NPN/PNP transistor -- PBSS2515YPN-QX
NPN/PNP low VCEsat transistor pair in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. . Features and benefits Low collector-emitter saturation voltage High current capability Replaces two...
80 V, 100 mA NPN/PNP resistor-equipped double transistors -- NHUMD12-QX
80 V, 100 mA NPN/PNP resistor-equipped double transistors -- NHUMD12F
80 V, 100 mA NPN/PNP resistor-equipped double transistors -- NHUMD12X
80 V, 100 mA NPN/PNP resistor-equipped double transistors -- NHUMD2-QX
80 V, 100 mA NPN/PNP resistor-equipped double transistors -- NHUMD2F
80 V, 100 mA NPN/PNP resistor-equipped double transistors -- NHUMD2X
80 V, 100 mA NPN/PNP resistor-equipped double transistors -- NHUMD3-QX
80 V, 100 mA NPN/PNP resistor-equipped double transistors -- NHUMD3F
80 V, 100 mA NPN/PNP resistor-equipped double transistors -- NHUMD3X
NPN/PNP Resistor-Equipped double Transistor (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Table 1.Product overview Type number - R1 - R2 - Package - NPN/NPN...
80 V, 100 mA NPN/PNP resistor-equipped double transistors -- NHUMD10F
80 V, 100 mA NPN/PNP resistor-equipped double transistors -- NHUMD10X
80 V, 100 mA NPN/PNP resistor-equipped double transistors -- NHUMD13F
80 V, 100 mA NPN/PNP resistor-equipped double transistors -- NHUMD13X
80 V, 100 mA NPN/PNP resistor-equipped double transistors -- NHUMD9F
80 V, 100 mA NPN/PNP resistor-equipped double transistors -- NHUMD9X
NPN/PNP Resistor-Equipped double Transistors (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number - R1 - R2 - Package -...
80 V, 100 mA NPN/PNP resistor-equipped double transistors -- NHUMD10-QX
80 V, 100 mA NPN/PNP resistor-equipped double transistors -- NHUMD13-QX
80 V, 100 mA NPN/PNP resistor-equipped double transistors -- NHUMD9-QX
NPN/PNP Resistor-Equipped double Transistors (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Table 1.Product overview Type number - R1 - R2 - Package - NPN/NPN...
30 V, P-channel Trench MOSFET -- NX3008NBKMB,315
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold...
20 V, 2 A P-channel Trench MOSFET -- NX2301P,215
20 V, 2 A P-channel Trench MOSFET -- NX2301PVL
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits 1.8 V RDSon rated for Low...
30 V, 230 mA P-channel Trench MOSFET -- NX3008PBK,215
30 V, 230 mA P-channel Trench MOSFET -- NX3008PBKVL
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Low threshold voltage Trench...
30 V, P-channel Trench MOSFET -- NXV90EPR
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology...
20 V, P-channel Trench MOSFET -- NXV65UPR
20 V, P-channel Trench MOSFET -- NXV75UPR
30 V, P-channel Trench MOSFET -- NXV100XPR
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET...
30 V, 200 mA P-channel Trench MOSFET -- NX3008PBKW,115
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Low threshold voltage Trench...
140 V, 4 A PNP high-voltage low VCEsat transistor -- PBHV9414ZX
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Features and benefits High voltage Low collector-emitter saturation...
150 V, 1 A PNP high-voltage low VCEsat transistor -- PBHV9115Z-QX
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8115Z-Q Features and benefits High voltage...
140 V, 4 A PNP high-voltage low VCEsat transistor -- PBHV9414Z-QX
500 V, 250 mA PNP high-voltage low VCEsat transistor -- PBHV9050Z,115
500 V, 250 mA PNP high-voltage low VCEsat transistor -- PBHV9050Z-QF
500 V, 250 mA PNP high-voltage low VCEsat transistor -- PBHV9050Z-QX
500 V, 250 mA PNP high-voltage low VCEsat transistor -- PBHV9050ZF
600 V, 0.1 A PNP high-voltage low VCEsat transistor -- PBHV3160Z-QX
600 V, 0.1 A PNP high-voltage low VCEsat transistor -- PBHV3160ZX
PNP high-voltage low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Features and benefits High voltage Low collector-emitter saturation voltage VCEsat High collector...
500 V, 0.5 A PNP high-voltage low VCEsat transistor -- PBHV9540Z-QX
PNP high-voltage low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8140Z-Q Features and benefits High voltage Low collector-emitter saturation voltage VCEsat...
500 V, 0.5 A PNP high-voltage low VCEsat transistor -- PBHV9540Z,115
PNP high-voltage low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8140Z Features and benefits High voltage Low collector-emitter saturation voltage VCEsat...
150 V, 2 A PNP high-voltage low VCEsat transistor -- PBHV9215Z-QX
PNP high-voltage low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8215Z-Q Features and benefits High voltage Low collector-emitter saturation voltage V...
150 V, 2 A PNP high-voltage low VCEsat transistor -- PBHV9215Z,115
PNP high-voltage low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8215Z Features and benefits High voltage Low collector-emitter saturation voltage V...
600 V, 0.5 A PNP high-voltage low VCEsat transistor -- PBHV9560Z-QX
PNP high-voltage low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8560Z-Q Features and benefits High voltage Low collector-emitter saturation voltage V...
600 V, 0.5 A PNP high-voltage low VCEsat transistor -- PBHV9560ZX
PNP high-voltage low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8560Z Features and benefits High voltage Low collector-emitter saturation voltage V...
150 V, 1 A PNP high-voltage low VCEsat transistor -- PBHV9115TLH-QR
PNP high-voltage low VCEsat transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8115TLH-Q Features and benefits High voltage Low collector-emitter saturation voltage VCEsat High...
150 V, 1 A PNP high-voltage low VCEsat transistor -- PBHV9115TLHR
PNP high-voltage low VCEsat transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8115TLH Features and benefits High voltage Low collector-emitter saturation voltage VCEsat High...
150 V, 1 A PNP high-voltage low VCEsat transistor -- PBHV9115Z,115
PNP high-voltage low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8115Z Features and benefits High voltage Low collector-emitter saturation voltage V...
500 V, 0.25 A PNP high-voltage low VCEsat transistor -- PBHV9040Z-QF
500 V, 0.25 A PNP high-voltage low VCEsat transistor -- PBHV9040Z-QX
PNP high-voltage low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540Z-Q Features and benefits High voltage Low collector-emitter saturation voltage V...
500 V, 0.25 A PNP high-voltage low VCEsat transistor -- PBHV9040Z,115
500 V, 0.25 A PNP high-voltage low VCEsat transistor -- PBHV9040ZF
PNP high-voltage low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540Z Features and benefits High voltage Low collector-emitter saturation voltage V...
500 V, 0.25 A PNP high-voltage low VCEsat transistor -- PBHV9040T-QR
500 V, 0.25 A PNP high-voltage low VCEsat transistor -- PBHV9040T-QVL
PNP high-voltage low VCEsat transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540T-Q Features and benefits High voltage Low collector-emitter saturation voltage VCEsat...
500 V, 0.25 A PNP high-voltage low VCEsat transistor -- PBHV9040T,215
500 V, 0.25 A PNP high-voltage low VCEsat transistor -- PBHV9040TVL
PNP high-voltage low VCEsat transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540T Features and benefits High voltage Low collector-emitter saturation voltage VCEsat...
150 V, 1 A PNP high-voltage low VCEsat transistor -- PBHV9115T-QR
150 V, 1 A PNP high-voltage low VCEsat transistor -- PBHV9115T-QVL
PNP high-voltage low VCEsat transistor in a SOT23 (TO-263AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8115T-Q. Features and benefits High voltage Low collector-emitter saturation voltage VCEsat...
150 V, 1 A PNP high-voltage low VCEsat transistor -- PBHV9115T,215
150 V, 1 A PNP high-voltage low VCEsat transistor -- PBHV9115TVL
PNP high-voltage low VCEsat transistor in a SOT23 (TO-263AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8115T Features and benefits High voltage Low collector-emitter saturation voltage VCEsat...
500 V, 150 mA PNP high-voltage low VCEsat transistor -- PBHV9050T-QR
PNP high-voltage low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. Features and benefits High voltage Low collector-emitter saturation voltage VCEsat High collector current capability...
500 V, 150 mA PNP high-voltage low VCEsat transistor -- PBHV9050T,215
PNP high-voltage low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. NPN complement: PMBTA45 Features and benefits High voltage Low collector-emitter saturation voltage VCEsat High...
400 V, 0.5 A PNP high-voltage low VCEsa transistor -- PBHV9540X-QF
400 V, 0.5 A PNP high-voltage low VCEsa transistor -- PBHV9540X-QX
500 V, 0.25 A PNP high-voltage low VCEsat transistor -- PBHV9040X-QX
PNP high-voltage low VCEsat transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540X-Q Features and benefits High voltage Low collector-emitter...
400 V, 0.5 A PNP high-voltage low VCEsa transistor -- PBHV9540XF
400 V, 0.5 A PNP high-voltage low VCEsa transistor -- PBHV9540XX
500 V, 0.25 A PNP high-voltage low VCEsat transistor -- PBHV9040X,115
PNP high-voltage low VCEsat transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540X Features and benefits High voltage Low collector-emitter...
150 V, 1 A PNP high-voltage low VCEsat transistor -- PBHV9115X,115
150 V, 1 A PNP high-voltage low VCEsat transistor -- PBHV9115X-QX
PNP high-voltage low VCEsat transistor in a SOT89 (SC-62) small and flat Surface-Mounted Device (SMD) plastic package. Features and benefits High voltage Low collector-emitter saturation voltage VCEsat High...
20 V PNP BISS loadswitch -- PBLS2001D,115
20 V PNP BISS loadswitch -- PBLS2002D,115
20 V PNP BISS loadswitch -- PBLS2003D,115
PNP low VCEsat Breakthrough in Small Signal (BISS) transistor and NPN Resistor- Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD) plastic package. Features and benefits...
40 V PNP BISS loadswitch -- PBLS4001Y,115
40 V PNP BISS loadswitch -- PBLS4004Y,115
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor- Equipped Transistor (RET) in one package. Features and benefits Low VCEsat (BISS) and resistor-equipped transistor in...
60 V PNP loadswitch -- PBLS6001D-QX
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD) plastic package. Features and benefits Low...
50 V, 100 mA low VCEsat PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ -- PBDTA114ETR
PNP low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PBDTC114ET Features and benefits Low collector-emitter saturation voltage VCEsat...
50 V, 100 mA low VCEsat PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ -- PBDTA114ETH-QR
PNP low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PBDTC114ETH-Q Features and benefits Low collector-emitter saturation voltage VCEsat...
50 V, 100 mA low VCEsat PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ -- PBDTA114YTR
PNP low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PBDTC114YT Features and benefits Low collector-emitter saturation voltage VCEsat...
50 V, 100 mA low VCEsat PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ -- PBDTA114YTH-QR
PNP low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PBDTC114YTH-Q Features and benefits Low collector-emitter saturation voltage VCEsat...
50 V, 100 mA low VCEsat PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ -- PBDTA123JTR
PNP low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PBDTC123JT Features and benefits Low collector-emitter saturation voltage VCEsat...
50 V, 100 mA low VCEsat PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ -- PBDTA123JTH-QR
PNP low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PBDTC123JTH-Q Features and benefits Low collector-emitter saturation voltage VCEsat...
50 V, 100 mA low VCEsat PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PBDTA124ETR
PNP low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PBDTC124ET Features and benefits Low collector-emitter saturation voltage VCEsat...
50 V, 100 mA low VCEsat PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ -- PBDTA124ETH-QR
PNP low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PBDTC124ETH-Q Features and benefits Low collector-emitter saturation voltage VCEsat...
50 V, 100 mA low VCEsat PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ -- PBDTA143XTR
PNP low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PBDTC143XT Features and benefits Low collector-emitter saturation voltage VCEsat...
50 V, 100 mA low VCEsat PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ -- PBDTA143XTH-QR
PNP low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PBDTC143XTH-Q Features and benefits Low collector-emitter saturation voltage VCEsat...
50 V, 100 mA low VCEsat PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ -- PBDTA143ZTR
PNP low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PBDTC143ZT Features and benefits Low collector-emitter saturation voltage VCEsat...
50 V, 100 mA low VCEsat PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ -- PBDTA143ZTH-QR
PNP low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PBDTC143ZTH-Q Features and benefits Low collector-emitter saturation voltage VCEsat...
50 V, 100 mA low VCEsat PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PBDTA144ETR
PNP low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PBDTC144ET Features and benefits Low collector-emitter saturation voltage VCEsat...
50 V, 100 mA low VCEsat PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ -- PBDTA144ETH-QR
PNP low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PBDTC144ETH-Q Features and benefits Low collector-emitter saturation voltage VCEsat...
40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 1 kΩ -- PBRP113ET-QR
PNP low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN113ET-Q Features and benefits 600 mA output current capability...
40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 1 kΩ -- PBRP113ET,215
PNP low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN113ET Features and benefits 600 mA output current capability...
40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 10 kΩ -- PBRP113ZT-QR
PNP low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN113ZT-Q Features and benefits 600 mA output current capability...
40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 10 kΩ -- PBRP113ZT,215
PNP low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN113ZT Features and benefits 600 mA output current capability...
40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ -- PBRP123ET-QR
PNP low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN123ET-Q Features and benefits 600 mA output current capability...
40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ -- PBRP123ET,215
PNP low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN123ET Features and benefits 600 mA output current capability...
40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ -- PBRP123YT,215
PNP low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN123YT Features and benefits 600 mA output current capability...
40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ -- PBRP123YT-QR
PNP low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN123YT-Q Features and benefits 600 mA output current capability Low...
40 V PNP loadswitch -- PBLS4005D,115
40 V PNP loadswitch -- PBLS4005D-QX
60 V, 1.5 A PNP BISS loadswitch -- PBLS6021D,115
60 V, 1.5 A PNP BISS loadswitch -- PBLS6023D-QX
60 V, 1.5 A PNP loadswitch -- PBLS6021D-QX
60 V, 1.5 A PNP loadswitch -- PBLS6023D,115
60 V, 1.5 A PNP loadswitch -- PBLS6024D,115
60 V, 1.5 A PNP loadswitch -- PBLS6024D-QX
PNP low VCEsat transistor and NPN Resistor- Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. Features and benefits Low VCEsat and resistor-equipped transistor...
60 V, 1 A PNP/NPN loadswitch double transistor -- PBLS6002D,115
PNP low VCEsat transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD) plastic package. Features and benefits Low VCEsat (BISS) transistor and...
60 V PNP loadswitch -- PBLS6001D,115
60 V PNP loadswitch -- PBLS6005D,115
60 V PNP loadswitch -- PBLS6005D-QX
60 V, 1 A PNP loadswitch double transistor -- PBLS6003D,115
60 V, 1 A PNP loadswitch double transistor -- PBLS6003D-QX
60 V, 1 A PNP/NPN loadswitch double transistor -- PBLS6002D-QX
PNP low VCEsat transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD) plastic package. Features and benefits Low VCEsat transistor and resistor-equipped...
40 V PNP loadswitch -- PBLS4003D-QX
40 V PNP loadswitch transistor -- PBLS4003D,115
PNP low VCEsat transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. Features and benefits Low VCEsat and resistor-equipped transistor in...
40 V, 4 A PNP low VCEsat transistor -- PBSS302PD-QH
40 V, 4 A PNP low VCEsat transistor -- PBSS302PD-QX
PNP low VCEsat transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS302ND-Q Features and benefits Ultra low collector-emitter saturation voltage VCEsat 4 A...
40 V, 4 A PNP low VCEsat transistor -- PBSS302PD,115
40 V, 4 A PNP low VCEsat transistor -- PBSS302PDH
PNP low VCEsat transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS302ND Features and benefits Ultra low collector-emitter saturation voltage VCEsat 4 A...
20 V, 5.1 A PNP low VCEsat transistor -- PBSS302PX,115
PNP low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS302NX Features and benefits Low collector-emitter saturation voltage VCEsat High...
40 V PNP loadswitch transistor -- PBLS4002Y-QX
PNP low VCEsat transistor and NPN Resistor-Equipped Transistor (RET) in one very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits Low VCEsat transistor and resistor-equipped transistor...
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA114ETR
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA114ETVL
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA114YTR
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA114YTVL
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA123JTR
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA123JTVL
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA124ETR
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA124ETVL
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA143ZTR
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA143ZTVL
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA144ETR
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA144ETVL
PNP Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1.Product overview Type number - R1 - R2 - Package - NPN complement: kΩ
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA114ET-QR
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA114YT-QR
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA123JT-QR
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA124ET-QR
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA143ZT-QR
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA144ET-QR
PNP Resistor-Equipped Transistor (RET) family in a small SOT23 Surface-Mounted Device (SMD) plastic package. Table 1.Product overview Type number - R1 - R2 - Package - NPN complement: kΩ -...
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA114EU-QX
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA114EUF
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA114EUX
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA114YU-QX
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA114YUF
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA114YUX
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA123JU-QX
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA123JUF
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA123JUX
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA124EU-QX
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA124EUF
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA124EUX
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA143ZU-QX
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA143ZUF
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA143ZUX
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA144EU-QX
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA144EUF
80 V, 100 mA PNP resistor-equipped transistors -- NHDTA144EUX
PNP Resistor-Equipped Transistor (RET) family in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Table 1.Product overview Type number - R1 - R2 - Package - NPN complement:...
80 V, 100 mA PNP/PNP resistor-equipped double transistors -- NHUMB10-QX
80 V, 100 mA PNP/PNP resistor-equipped double transistors -- NHUMB11F
80 V, 100 mA PNP/PNP resistor-equipped double transistors -- NHUMB11X
80 V, 100 mA PNP/PNP resistor-equipped double transistors -- NHUMB13-QX
80 V, 100 mA PNP/PNP resistor-equipped double transistors -- NHUMB1F
80 V, 100 mA PNP/PNP resistor-equipped double transistors -- NHUMB1X
80 V, 100 mA PNP/PNP resistor-equipped double transistors -- NHUMB2F
80 V, 100 mA PNP/PNP resistor-equipped double transistors -- NHUMB2X
80 V, 100 mA PNP/PNP resistor-equipped double transistors -- NHUMB9-QX
PNP/PNP Resistor-Equipped double Transistor (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Table 1.Product overview Type number - R1 - R2 - Package - NPN/NPN...
650 V, 75 A trench field-stop IGBT with full rated silicon diode -- NGW75T65M3DFQQ
The NGW75T65M3DFQ is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third⁠⁠-⁠⁠generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65M3DFQ is rated to 175 °C with optimized...
1200 V, 17 mΩ, N-channel SiC MOSFET -- NSF017120T1A0HP
The NSF017120T1A0 is a Silicon Carbide based 1200 V power MOSFET in the QDPAK plastic package for surface-mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with fast switching...
1200 V, 17 mΩ, N-channel SiC MOSFET for automotive applications -- NSF017120T1A0-QHP
The NSF017120T1A0-Q is a Silicon Carbide based 1200 V power MOSFET in the QDPAK plastic package for surface-mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with fast switching...
1200 V, 17 mOhm, N-channel SiC MOSFET -- NSF017120T2A0J
The NSF017120T2A0 is a Silicon Carbide based 1200V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with fast...
1200 V, 17 mΩ, N-channel SiC MOSFET for automotive applications -- NSF017120T2A0-QJ
The NSF017120T2A0-Q is a Silicon Carbide based 1200V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with fast...
1200 V, 30 mΩ, N-channel SiC MOSFET -- NSF030120D7A0J
The NSF030120D7A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined...
1200 V, 30 mΩ, N-channel SiC MOSFET for automotive applications -- NSF030120D7A0-QJ
The NSF030120D7A0-Q is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined...
1200 V, 30 mOhm, N-channel SiC MOSFET -- NSF030120L3A0Q
The NSF030120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability...
1200 V, 30 mΩ, N-channel SiC MOSFET -- NSF030120L4A0Q
The NSF030120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability...
1200 V, 30 mΩ, N-channel SiC MOSFET -- NSF030120L4A0-QQ
The NSF030120L4A0-Q is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability...
1200 V, 30 mΩ, N-channel SiC MOSFET -- NSF030120T1A0HP
The NSF030120T1A0 is a Silicon Carbide based 1200 V power MOSFET in the QDPAK plastic package for surface-mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with fast switching...
1200 V, 30 mΩ, N-channel SiC MOSFET for automotive applications -- NSF030120T1A0-QHP
The NSF030120T1A0-Q is a Silicon Carbide based 1200 V power MOSFET in the QDPAK plastic package for surface-mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with fast switching...
1200 V, 30 mOhm, N-channel SiC MOSFET -- NSF030120T2A0J
The NSF030120T2A0 is a Silicon Carbide based 1200 V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with...
1200 V, 30 mΩ, N-channel SiC MOSFET for automotive applications -- NSF030120T2A0-QJ
The NSF030120T2A0-Q is a Silicon Carbide based 1200 V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with...
1200 V, 40 mΩ, N-channel SiC MOSFET -- NSF040120D7A0J
The NSF040120D7A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined...
1200 V, 40 mΩ, N-channel SiC MOSFET -- NSF040120D7A1J
The NSF040120D7A1 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined...
1200 V, 40 mΩ, N-channel SiC MOSFET for automotive applications -- NSF040120D7A1-QJ
The NSF040120D7A1-Q is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined...
1200 V, 40 mOhm, N-channel SiC MOSFET -- NSF040120L3A0Q
The NSF040120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability...
1200 V, 40 mΩ, N-channel SiC MOSFET -- NSF040120L4A0Q
The NSF040120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability...
1200 V, 40 mΩ, N-channel SiC MOSFET -- NSF040120L4A1Q
The NSF040120L4A1 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability...
1200 V, 40 mΩ, N-channel SiC MOSFET for automotive applications -- NSF040120L4A1-QQ
The NSF040120L4A1-Q is a Silicon Carbide based 1200V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined...
1200 V, 40 mΩ, N-channel SiC MOSFET -- NSF040120T1A1HP
The NSF040120T1A1 is a Silicon Carbide based 1200 V power MOSFET in the QDPAK plastic package for surface-mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with fast switching...
1200 V, 40 mΩ, N-channel SiC MOSFET for automotive applications -- NSF040120T1A1-QHP
The NSF040120T1A1-Q is a Silicon Carbide based 1200 V power MOSFET in the QDPAK plastic package for surface-mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with fast switching...
1200 V, 40 mOhm, N-channel SiC MOSFET -- NSF040120T2A1J
The NSF040120T2A1 is a Silicon Carbide based 1200 V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with...
1200 V, 40 mOhm, N-channel SiC MOSFET for automotive applications -- NSF040120T2A1-QJ
The NSF040120T2A1-Q is a Silicon Carbide based 1200 V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with...
1200 V, 60 mOhm, N-channel SiC MOSFET -- NSF060120D7A0J
The NSF060120D7A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined...
1200 V, 60 mOhm N-channel SiC MOSFET for automotive applications -- NSF060120D7A0-QJ
The NSF060120D7A0-Q is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined...
1200 V, 60 mΩ, N-channel SiC MOSFET -- NSF060120L3A0Q
The NSF060120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3L plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability...
1200 V, 60 mOhm, N-channel SiC MOSFET -- NSF060120L4A0Q
The NSF060120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247-4 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability...
1200 V, 60 mOhm, N-channel SiC MOSFET for automotive applications -- NSF060120L4A0-QQ
The NSF060120L4A0-Q is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247-4 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability...
1200 V, 60 mΩ, N-channel SiC MOSFET -- NSF060120T1A0HP
The NSF060120T1A0 is a Silicon Carbide based 1200 V power MOSFET in the QDPAK plastic package for surface-mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with fast switching...
1200 V, 60 mΩ, N-channel SiC MOSFET for automotive applications -- NSF060120T1A0-QHP
The NSF060120T1A0-Q is a Silicon Carbide based 1200 V power MOSFET in the QDPAK plastic package for surface-mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with fast switching...
1200 V, 60 mOhm, N-channel SiC MOSFET for automotive applications -- NSF060120T2A0J
The NSF060120T2A0 is a Silicon Carbide based 1200 V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with...
1200 V, 60 mΩ, N-channel SiC MOSFET for automotive applications -- NSF060120T2A0-QJ
The NSF060120T2A0-Q is a Silicon Carbide based 1200 V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with...
1200 V, 80 mOhm, N-channel SiC MOSFET -- NSF080120D7A0J
The NSF080120D7A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined...
SiC MOSFET with 80 mΩ in TO-247-3 -- NSF080120L3A0Q
The NSF080120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3L plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability...
1200 V, 80 mOhm, N-channel SiC MOSFET -- NSF080120L4A0Q
The NSF080120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability...
1200 V, 80 mΩ, N-channel SiC MOSFET -- NSF080120L4A1Q
The NSF080120L4A1 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability...
1200 V, 80 mΩ, N-channel SiC MOSFET for automotive applications -- NSF080120L4A1-QQ
The NSF080120L4A1-Q is a Silicon Carbide based 1200V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined...
1200 V, 80 mΩ, N-channel SiC MOSFET -- NSF080120T1A1HP
The NSF080120T1A1 is a Silicon Carbide based 1200 V power MOSFET in the QDPAK plastic package for surface-mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with fast switching...
1200 V, 80 mΩ, N-channel SiC MOSFET for automotive applications -- NSF080120T1A1-QHP
The NSF080120T1A1-Q is a Silicon Carbide based 1200 V power MOSFET in the QDPAK plastic package for surface-mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with fast switching...
1200 V, 80 mOhm, N-channel SiC MOSFET -- NSF080120T2A1J
1200 V, 80 mOhm, N-channel SiC MOSFET for automotive applications -- NSF080120T2A1-QJ
The NSF080120T2A1 is a Silicon Carbide based 1200 V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with...
Low-noise, 1.2 A transformer driver for isolated power supplies -- NXF6505ADA-Q100Z
Low-noise, 1.2 A transformer driver for isolated power supplies -- NXF6505BDA-Q100Z
The NXF6505A/B-Q100is a specialized push-pull transformer driver that is designed for isolated power supplies in small form factors. This driver is capable of driving low-profile, center-tapped transformers from a 2.25...

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