P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. The device has a drain-source voltage rating of -20 V, a gate-source voltage rating of ±12 V, and a continuous drain current of -4.3 A at Tj = 25 °C with VGS = -4.5 V. The on-state resistance is 58 to 74 mΩ at VGS = -4.5 V and ID = -2.8 A. Total power dissipation is 480 mW at Tamb = 25 °C. Applications include low power DC-to-DC converters, load switching, battery management, and battery powered portable equipment.
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
MOSFET P-CH 20V 2.8A TO236AB
P-Channel 20V 2.8A (Ta) 480mW (Ta) Surface Mount TO-236AB
MOSFET P-CH 20V 2.8A TO236AB
MOSFET PMV65XP/TO-236AB/REE
MOSFET P-CH 20V 2.8A TO236AB
| Nexperia B.V. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | PMV65XPVL | 1727-PMV65XPVLCT-ND | PMV65XPVL | PMV65XPVL |
| Product Name | 20 V, single P-channel Trench MOSFET | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | -20 volts | |||
| IDSS | -4300 milliamps | |||
| VGS(off) | 12 volts | |||
| PD | 480 milliwatts |
