P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
P-Channel 12V 12.7A (Ta) 3.9W (Ta) Surface Mount DFN2020MD-6
P-Channel 12V 12.7A (Ta) 3.9W (Ta) Surface Mount DFN2020MD-6
P-Channel 12V 12.7A (Ta) 3.9W (Ta) Surface Mount DFN2020MD-6
MOSFET DFN2020MD-6
| Nexperia B.V. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMPB14XPX | 1727-7805-2-ND | PMPB14XPX | PMPB14XPX |
| Product Name | 12 V, P-channel Trench MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel | ||
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | -12 volts | |||
| IDSS | -12700 milliamps | |||
| VGS(off) | -0.6800 volts |