Nexperia B.V. 30 V, N-channel Trench MOSFET PMPB50ENEX

Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Extended temperature range Tj = 175 °C Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Tin-plated 100 % solderable side pads for optical solder inspection ElectroStatic Discharge (ESD) protection > 2 kV HBM Trench MOSFET technology Applications Relay driver High-speed line driver Low-side load switch Switching circuits
  • 30 V, N-channel Trench MOSFET - PMPB50ENEX - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-PMPB50ENEXDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMPB50ENEXTR-ND - DigiKey
    DigiKey
  • PMPB50ENEX - Rochester Electronics
    Rochester Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMPB50ENEX - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Extended temperature range Tj = 175 °C Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Tin-plated 100 % solderable side pads for optical solder inspection ElectroStatic Discharge (ESD) protection > 2 kV HBM Trench MOSFET technology Applications Relay driver High-speed line driver Low-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
30 V, N-channel Trench MOSFET - PMPB50ENEX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
30 V, N-channel Trench MOSFET
PMPB50ENEX
30 V, N-channel Trench MOSFET PMPB50ENEX
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Extended temperature range Tj = 175 °C Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Tin-plated 100 % solderable side pads for optical solder inspection ElectroStatic Discharge (ESD) protection > 2 kV HBM Trench MOSFET technology Applications Relay driver High-speed line driver Low-side load switch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Extended temperature range Tj = 175 °C
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
  • Tin-plated 100 % solderable side pads for optical solder inspection
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM
  • Trench MOSFET technology

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PMPB50ENEXDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMPB50ENEXDKR-ND
Single FETs, MOSFETs 1727-PMPB50ENEXDKR-ND
N-Channel 30V 6.9A (Ta) 1.9mW (Ta) Surface Mount DFN2020MD-6

N-Channel 30V 6.9A (Ta) 1.9mW (Ta) Surface Mount DFN2020MD-6

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMPB50ENEXTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMPB50ENEXTR-ND
Single FETs, MOSFETs 1727-PMPB50ENEXTR-ND
N-Channel 30V 6.9A (Ta) 1.9mW (Ta) Surface Mount DFN2020MD-6

N-Channel 30V 6.9A (Ta) 1.9mW (Ta) Surface Mount DFN2020MD-6

Buy Now Datasheet
- PMPB50ENEX - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
PMPB50ENEX
PMPB50ENEX
PMPB50ENE - 30 V, N-channel Trench MOSFET

PMPB50ENE - 30 V, N-channel Trench MOSFET

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
PMPB50ENEX
MOSFET PMPB50ENEX
MOSFET PMPB50ENE/SOT1220/SO T1220

MOSFET PMPB50ENE/SOT1220/SOT1220

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMPB50ENEX - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMPB50ENEX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMPB50ENEX
MOSFET DFN2020MD-6

MOSFET DFN2020MD-6

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey Rochester Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number PMPB50ENEX 1727-PMPB50ENEXDKR-ND PMPB50ENEX PMPB50ENEX PMPB50ENEX
Product Name 30 V, N-channel Trench MOSFET Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 30 volts
IDSS 6900 milliamps
VGS(off) 20 volts
PD 1.9 milliwatts
Unlock Full Specs
to access all available technical data